公开(公告)号：US10062773B2

公开(公告)日：2018-08-28

申请号：US14712894

申请日：2015-05-14

Applicant: Renesas Electronics Corporation

Inventor： Masaru Kadoshima ,  Masao Inoue

IPC: H01L29/739 ,  H01L29/10 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L29/7397 ,  H01L21/823892 ,  H01L27/0922 ,  H01L29/1095

Abstract: The present invention makes it possible, in a manufacturing process of a semiconductor device, to inhibit: impurities from diffusing from a substrate to a semiconductor layer; and the withstand voltage of a transistor from deteriorating.In the present invention, a first electrically conductive type epitaxial layer is formed over a first electrically conductive type base substrate. The impurity concentration of the epitaxial layer is lower than that of the base substrate. A second electrically conductive type first embedded layer and a second electrically conductive type second embedded layer are formed in the epitaxial layer. The second embedded layer is deeper than the first embedded layer, is kept away from the first embedded layer, and has an impurity concentration lower than the first embedded layer. A transistor is further formed in the epitaxial layer.

公开(公告)号：US09685565B2

公开(公告)日：2017-06-20

申请号：US14470719

申请日：2014-08-27

Applicant: Renesas Electronics Corporation

Inventor： Masaharu Mizutani ,  Masao Inoue ,  Hiroshi Umeda ,  Masaru Kadoshima

IPC: H01L29/792 ,  H01L29/51 ,  H01L29/66 ,  H01L21/28 ,  H01L21/02 ,  H01L29/423

CPC classification number: H01L29/792 ,  H01L21/02148 ,  H01L21/02178 ,  H01L21/02318 ,  H01L21/02359 ,  H01L21/28229 ,  H01L21/28282 ,  H01L29/4234 ,  H01L29/511 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66833

Abstract: The performance of a semiconductor device having a memory element is improved. An insulating film, which is a gate insulating film for a memory element, is formed on a semiconductor substrate, and a gate electrode for the memory element is formed on the insulating film. The insulating film has a first insulating film, a second insulating film thereon, and a third insulating film thereon. The second insulating film is a high-dielectric constant insulator film having a charge accumulating function and contains hafnium, silicon, and oxygen. Each of the first insulating film and the third insulating film has a band gap larger than the band gap of the second insulating film.

公开(公告)号：US09514946B2

公开(公告)日：2016-12-06

申请号：US14712903

申请日：2015-05-14

Applicant: Renesas Electronics Corporation

Inventor： Masao Inoue ,  Yoshiki Maruyama ,  Tomoya Saito ,  Atsushi Yoshitomi

IPC: H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L29/423 ,  H01L29/66 ,  H01L29/792

CPC classification number: H01L21/28282 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L29/4234 ,  H01L29/42364 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66833 ,  H01L29/792

Abstract: An improvement is achieved in the performance of a semiconductor device including a memory element. Over a semiconductor substrate, a gate electrode for the memory element is formed via an insulating film as a gate insulating film for the memory element. The insulating film includes first, second, third, fourth, and fifth insulating films in order of being apart from the substrate. The second insulating film has a charge storing function. The band gap of each of the first and third insulating films is larger than a band gap of the second insulating film. The band gap of the fourth insulating film is smaller than the band gap of the third insulating film. The band gap of the fifth insulating film is smaller than the band gap of the fourth insulating film.

Abstract translation: 在包括存储元件的半导体器件的性能方面实现了改进。 在半导体衬底上，用于存储元件的栅电极经由作为存储元件的栅极绝缘膜的绝缘膜形成。 绝缘膜按照与基板分开的顺序包括第一，第二，第三，第四和第五绝缘膜。 第二绝缘膜具有电荷存储功能。 第一和第三绝缘膜中的每一个的带隙大于第二绝缘膜的带隙。 第四绝缘膜的带隙小于第三绝缘膜的带隙。 第五绝缘膜的带隙小于第四绝缘膜的带隙。

公开(公告)号：US09356110B2

公开(公告)日：2016-05-31

申请号：US14173074

申请日：2014-02-05

Applicant: Renesas Electronics Corporation

Inventor： Masao Inoue ,  Yoshiki Maruyama ,  Akio Nishida ,  Yorinobu Kunimune ,  Kota Funayama

IPC: H01L21/28 ,  H01L29/40 ,  H01L29/49 ,  H01L29/423 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/4925 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/28035 ,  H01L21/28176 ,  H01L21/28273 ,  H01L29/42324 ,  H01L29/4916 ,  H01L29/66825

Abstract: To control a grain growth on laminated polysilicon films, a method of manufacturing a semiconductor device is provided. The method includes: forming a first polysilicon film (21) on a substrate (10); forming an interlayer oxide layer (22) on a surface of the first polysilicon film (21); forming a second polysilicon film (23) in contact with the interlayer oxide layer (22) above the first polysilicon film (21); and performing annealing at a temperature higher than a film formation temperature of the first and second polysilicon films in a gas atmosphere containing nitrogen, after formation of the second polysilicon film (23).

Abstract translation: 为了控制层叠多晶硅膜上的晶粒生长，提供了制造半导体器件的方法。 该方法包括：在衬底（10）上形成第一多晶硅膜（21）; 在所述第一多晶硅膜（21）的表面上形成层间氧化物层（22）; 形成与第一多晶硅膜（21）上方的层间氧化物层（22）接触的第二多晶硅膜（23）。 在形成第二多晶硅膜（23）之后，在含氮气体气氛中，在高于第一和第二多晶硅膜的成膜温度的温度下进行退火。

公开(公告)号：US20150349143A1

公开(公告)日：2015-12-03

申请号：US14712903

申请日：2015-05-14

Applicant: Renesas Electronics Corporation

Inventor： Masao Inoue ,  Yoshiki Maruyama ,  Tomoya Saito ,  Atsushi Yoshitomi

IPC: H01L29/792 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L29/423

CPC classification number: H01L21/28282 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L29/4234 ,  H01L29/42364 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66833 ,  H01L29/792

Abstract: An improvement is achieved in the performance of a semiconductor device including a memory element. Over a semiconductor substrate, a gate electrode for the memory element is formed via an insulating film as a gate insulating film for the memory element. The insulating film includes first, second, third, fourth, and fifth insulating films in order of being apart from the substrate. The second insulating film has a charge storing function. The band gap of each of the first and third insulating films is larger than a band gap of the second insulating film. The band gap of the fourth insulating film is smaller than the band gap of the third insulating film. The band gap of the fifth insulating film is smaller than the band gap of the fourth insulating film.

Abstract translation: 在包括存储元件的半导体器件的性能方面实现了改进。 在半导体衬底上，用于存储元件的栅电极经由作为存储元件的栅极绝缘膜的绝缘膜形成。 绝缘膜按照与基板分开的顺序包括第一，第二，第三，第四和第五绝缘膜。 第二绝缘膜具有电荷存储功能。 第一和第三绝缘膜中的每一个的带隙大于第二绝缘膜的带隙。 第四绝缘膜的带隙小于第三绝缘膜的带隙。 第五绝缘膜的带隙小于第四绝缘膜的带隙。