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11.发明授权公开(公告)号：US06533910B2
公开(公告)日：2003-03-18
申请号：US09750251
申请日：2000-12-29
IPC分类号： C23C1434
CPC分类号： H01J37/32477 , B01J19/02 , B01J2219/00171 , B01J2219/0218 , C23C16/4404
摘要： A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a carbonitride containing surface and process for manufacture thereof.
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12.发明授权Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof 失效含有氧化铈的陶瓷组分和半导体加工设备中的涂层及其制造方法公开(公告)号：US06830622B2
公开(公告)日：2004-12-14
申请号：US09820693
申请日：2001-03-30
IPC分类号： H01L2100
CPC分类号： C04B35/50 , B01J19/0073 , B01J19/02 , B01J2219/0218 , B01J2219/024 , C04B2235/3217 , C04B2235/3225 , C04B2235/3229 , C04B2235/3244 , C04B2235/3817 , C04B2235/80 , C23C16/4404 , C23C28/042 , H01J37/32477 , Y10S156/915
摘要： A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises a cerium oxide containing ceramic material as an outermost surface of the component. The cerium oxide containing ceramic material comprises one or more cerium oxides as the single largest constituent thereof. The component can be made entirely of the cerium oxide containing ceramic material or, alternatively, the cerium oxide containing ceramic can be provided as a layer on a substrate such as aluminum or an aluminum alloy, a ceramic material, stainless steel, or a refractory metal. The cerium oxide containing ceramic layer can be provided as a coating by a technique such as plasma spraying. One or more intermediate layers may be provided between the component and the cerium oxide containing ceramic coating. To promote adhesion of the cerium oxide containing ceramic coating, the component surface or the intermediate layer surface may be subjected to a surface roughening treatment prior to depositing the cerium oxide containing ceramic coating.
摘要翻译： 诸如等离子体室的半导体加工设备的耐腐蚀组分包括含有氧化铈的陶瓷材料作为组分的最外表面。 含有氧化铈的陶瓷材料包含一种或多种作为其最大成分的氧化铈。 该组分可以完全由含氧化铈的陶瓷材料制成，或者可选地，含氧化铈陶瓷可以作为基底如铝或铝合金，陶瓷材料，不锈钢或难熔金属 。 含氧化铈陶瓷层可以通过诸如等离子喷涂的技术作为涂层提供。 可以在组分和含氧化铈的陶瓷涂层之间提供一个或多个中间层。 为了促进含氧化铈陶瓷涂层的粘附，可以在沉积含氧化铈陶瓷涂层之前对组分表面或中间层表面进行表面粗糙化处理。
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13.发明授权Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor 有权用于等离子体反应器的生产率增强热喷涂含氧化钇的涂层公开(公告)号：US07311797B2
公开(公告)日：2007-12-25
申请号：US10180504
申请日：2002-06-27
CPC分类号： H01J37/32467 , C23C16/4404 , H01J37/32477 , H01J37/3255
摘要： Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack.
摘要翻译： 半导体处理装置的组件包括在喷射的含氧化钇的涂层中，其在等离子体气氛中提供侵蚀，腐蚀和/或耐腐蚀侵蚀性。 涂层可以保护基材免受物理和/或化学侵蚀。
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公开(公告)号：US07300537B2
公开(公告)日：2007-11-27
申请号：US11000894
申请日：2004-12-02
CPC分类号： H01J37/32467 , C23C16/4404 , H01J37/32477 , H01J37/3255
摘要： Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack.
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15.发明授权公开(公告)号：US08318035B2
公开(公告)日：2012-11-27
申请号：US11812902
申请日：2007-06-22
CPC分类号： C03C23/0075 , C03C15/00 , C03C19/00 , C03C2204/08 , Y10S438/905 , Y10S438/906
摘要： Methods of surface finishing a component useful for a plasma processing apparatus are provided. The component includes at least one plasma-exposed quartz glass surface. The method includes mechanically polishing, chemically etching and cleaning the plasma-exposed surface to achieve a desired surface morphology. Quartz glass sealing surfaces of the component also can be finished by the methods. Plasma-exposed surface and sealing surfaces of the same component can be finished to different surface morphologies from each other.
摘要翻译： 提供表面处理用于等离子体处理装置的部件的方法。 该组件包括至少一个等离子体暴露的石英玻璃表面。 该方法包括机械抛光，化学蚀刻和清洁等离子体暴露表面以实现期望的表面形态。 石英玻璃密封面的组件也可以通过这种方法完成。 等离子体暴露的表面和相同部件的密封表面可以被完成为不同的表面形态彼此。
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16.发明授权公开(公告)号：US07250114B2
公开(公告)日：2007-07-31
申请号：US10448422
申请日：2003-05-30
CPC分类号： C03C23/0075 , C03C15/00 , C03C19/00 , C03C2204/08 , Y10S438/905 , Y10S438/906
摘要： Methods of surface finishing a component useful for a plasma processing apparatus are provided. The component includes at least one plasma-exposed quartz glass surface. The method includes mechanically polishing, chemically etching and cleaning the plasma-exposed surface to achieve a desired surface morphology. Quartz glass sealing surfaces of the component also can be finished by the methods. Plasma-exposed surface and sealing surfaces of the same component can be finished to different surface morphologies from each other.
摘要翻译： 提供表面处理用于等离子体处理装置的部件的方法。 该组件包括至少一个等离子体暴露的石英玻璃表面。 该方法包括机械抛光，化学蚀刻和清洁等离子体暴露表面以实现期望的表面形态。 石英玻璃密封面的组件也可以通过这种方法完成。 等离子体暴露的表面和相同部件的密封表面可以被完成为不同的表面形态彼此。
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公开(公告)号：US08292698B1
公开(公告)日：2012-10-23
申请号：US11730299
申请日：2007-03-30
申请人： Hong Shih , Oana M. Leonte , John E. Daugherty , Tuochuan Huang , Gregory J. Goldspring , Michael C. May
发明人： Hong Shih , Oana M. Leonte , John E. Daugherty , Tuochuan Huang , Gregory J. Goldspring , Michael C. May
CPC分类号： B24C1/003 , B08B7/0021 , B08B7/0092 , H01J37/32853 , H01J37/32862 , H01J37/3288 , H01J2237/022 , H01L21/67028
摘要： An on-line method of cleaning contaminants from at least one interior surface in plasma chambers comprises blasting one or more interior surfaces of a plasma chamber with dry ice to remove contaminants from the one or more surfaces.
摘要翻译： 在等离子体室中从至少一个内表面清洁污染物的在线方法包括用干冰喷射等离子体室的一个或多个内表面以从一个或多个表面去除污染物。
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18.发明授权公开(公告)号：US07578889B2
公开(公告)日：2009-08-25
申请号：US11730300
申请日：2007-03-30
申请人： Hong Shih , Yaobo Yin , Shun Jackson Wu , Armen Avoyan , John E. Daugherty , Linda Jiang
发明人： Hong Shih , Yaobo Yin , Shun Jackson Wu , Armen Avoyan , John E. Daugherty , Linda Jiang
IPC分类号： B08B3/04
CPC分类号： B08B3/08 , B08B3/12 , H01J37/32862 , H01L21/67051 , H01L21/67069
摘要： Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.
摘要翻译： 系统和有效的清洁电容耦合等离子体反应堆电极的方法，并降低表面粗糙度，从而提高清洁电极满足表面污染规格和制造产量。 对清洁过程中使用的工具进行预清洁有助于防止被清洁电极的污染。
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公开(公告)号：US06994769B2
公开(公告)日：2006-02-07
申请号：US10881112
申请日：2004-06-29
IPC分类号： C23F1/00
CPC分类号： H01J37/32862 , C23C16/4404 , C23C16/4405 , H01J37/321 , Y10S134/902 , Y10S438/905
摘要： An apparatus configured to remove chamber deposits between process operations is provided. The processing chamber includes a top electrode in communication with a power supply. A processing chamber defined within a base, a sidewall extending from the base, and a top disposed on the sidewall is provided. The processing chamber has an outlet enabling removal of fluids within the processing chamber. The processing chamber includes a substrate support and an inner surface of the processing chamber defined by the base, the sidewall and the top. The inner surface is coated with a fluorine containing polymer coating. The fluorine containing polymer coating is configured to release fluorine upon creation of an oxygen plasma in the processing chamber to remove a residue deposited on the fluorine containing polymer coating. The residue was deposited on the polymer coating from a processing operation performed in the processing chamber.
摘要翻译： 提供一种被配置为在处理操作之间去除室沉积物的装置。 处理室包括与电源连通的顶部电极。 设置在基座内的处理室，从基座延伸的侧壁和设置在侧壁上的顶部。 处理室具有能够去除处理室内的流体的出口。 处理室包括基板支撑件和由基座，侧壁和顶部限定的处理室的内表面。 内表面涂有含氟聚合物涂层。 含氟聚合物涂层被配置为在处理室中产生氧等离子体时释放氟以除去沉积在含氟聚合物涂层上的残余物。 残留物从处理室中进行的处理操作沉积在聚合物涂层上。
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公开(公告)号：US06344105B1
公开(公告)日：2002-02-05
申请号：US09345639
申请日：1999-06-30
申请人： John E. Daugherty , Neil Benjamin , Jeff Bogart , Vahid Vahedi , David Cooperberg , Alan Miller , Yoko Yamaguchi
发明人： John E. Daugherty , Neil Benjamin , Jeff Bogart , Vahid Vahedi , David Cooperberg , Alan Miller , Yoko Yamaguchi
IPC分类号： H01L2100
CPC分类号： H01L21/67069 , H01J37/32623 , H01J37/32642 , H01L21/68721 , H01L21/68735 , Y10S156/915
摘要： Improved methods and apparatus for ion-assisted etch processing in a plasma processing system are disclosed. In accordance with various aspects of the invention, an elevated edge ring, a grooved edge ring, and a RF coupled edge ring are disclosed. The invention operates to improve etch rate uniformity across a substrate (wafer). Etch rate uniformity improvement provided by the invention not only improves fabrication yields but also is cost efficient and does not risk particulate and/or heavy metal contamination.
摘要翻译： 公开了用于等离子体处理系统中的离子辅助蚀刻处理的改进方法和装置。 根据本发明的各个方面，公开了一种高边缘环，带槽边缘环和RF耦合边缘环。 本发明用于提高衬底（晶片）上的蚀刻速率均匀性。 本发明提供的蚀刻率均匀性改进不仅提高了制造成本，而且成本有效，并且不会对颗粒和/或重金属污染造成危害。
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