摘要:
An integrated circuit delay device includes a digital delay line configured to provide a percent-of-clock period delay to a timing signal received at an input thereof, in response to a control signal. This control signal has a value that specifies a length of the delay. A delay line control circuit is also provided. The delay line control circuit is configured to generate the control signal by counting multiple cycles of a high frequency oscillator signal (e.g., ring oscillator signal) having a period less than the clock period, over a time interval having a duration greater than the clock period.
摘要:
One embodiment of the present invention provides a system that amplifies capacitively coupled inter-chip communication signals. During operation, the system transmits a signal through a capacitive transmitter pad and receives a corresponding input signal through a capacitive receiver pad. The system amplifies the input signal by feeding it through a number of cascaded CMOS inverters operating from ever-increasing power supply voltages from the first to the last inverter. The system periodically initializes the input voltage of the first CMOS inverter by: suspending data transmission on the capacitive transmitter pad and setting the voltage on the capacitive transmitter pad to a middle point between a voltage that represents logic “1” and a voltage that represents logic “0”, coupling the output of the first CMOS inverter to its input through a switch, and, after the input voltage of the first CMOS inverter stage substantially stabilizes at the switching threshold, uncoupling the output of the first CMOS inverter stage from the input of the first CMOS inverter stage and then resuming data transmission on the capacitive transmitter pad.
摘要:
A dynamic random access memory integrated circuit and method includes internal refresh control and an array configured to receive read and write access requests having priority over pending refresh requests, wherein refresh requests are queueable and retired on clock cycles not requiring an access of the array and complete in one clock cycle. No on-board cache memory is required. A method includes: determining within the circuit when one of the banks of the array requires a refresh, prioritizing read and write access requests over pending refresh requests, read access requests initiating an access to the array without determining whether data is available from outside the array, and retiring within a clock cycle one pending refresh request to a bank when that bank has pending refresh requests and does not also require an access of the array on that clock cycle.
摘要:
A CAM cell is disclosed that includes a comparator and two three-transistor (3T) DRAM cells connected to a pair of associated bit lines. Data is stored using intrinsic capacitance of each 3T DRAM cell, and is applied to the gate terminal of a pull-down transistor of the comparator. During refresh operations, inverted data values are written onto the bit lines, and subsequently written from the bit lines to the 3T DRAM cells. In ternary embodiments, an inverting refresh circuit is used to re-invert the inverted data values prior to being written to the 3T DRAM cells. In one embodiment, the 3T DRAM cells are cross-coupled to the bit lines, and the inverting refresh circuit transfers bits from one bit line to the other.
摘要:
One embodiment of the present invention provides a system that facilitates proximity communication. This system includes a circuit containing a bootstrap transistor and a pass-gate transistor, where the drain of the bootstrap transistor is coupled to the gate of the pass-gate transistor. Note that a first coupling capacitance exists between the source of the pass-gate transistor and the drain of the bootstrap transistor and a second coupling capacitance exists between the drain of the pass-gate transistor and the drain of the bootstrap transistor. During operation, the gate and the source of the bootstrap transistor are coupled to a high voltage, thereby causing an intermediate voltage at the drain of the bootstrap transistor. When the source of the pass-gate transistor transitions to a high voltage, the first coupling capacitance and the second coupling capacitance boost the voltage at the gate of the pass-gate transistor higher than the high voltage, thereby enabling the high voltage at the source of the pass-gate transistor to pass to the drain of the pass-gate transistor.