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    HIGH DENSITY PLASMA OXIDATION
    12.
    发明申请
    HIGH DENSITY PLASMA OXIDATION 审中-公开
    高密度等离子体氧化

    公开(公告)号：US20070245957A1

    公开(公告)日：2007-10-25

    申请号：US11769372

    申请日：2007-06-27

    申请人： Michael Belyansky ,  Oleg Glushenkov ,  Andreas Knorr

    发明人： Michael Belyansky ,  Oleg Glushenkov ,  Andreas Knorr

    IPC分类号： C23C16/00

    CPC分类号： H01L21/31658 ,  C23C8/36 ,  H01J37/321 ,  H01J2237/338 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662

    摘要： A method of oxidizing a substrate having area of about 30,000 mm2 or more. The surface is preferably comprised of silicon-containing materials, such as silicon, silicon germanium, silicon carbide, silicon nitride, and metal silicides. A mixture of oxygen-bearing gas and diluent gas normally non-reactive to oxygen, such as Ne, Ar, Kr, Xe, and/or Rn are ionized to create a plasma having an electron density of at least about 1 e12 cm−3 and containing ambient electrons having an average temperature greater than about 1 eV. The substrate surface is oxidized with energetic particles, comprising primarily atomic oxygen, created in the plasma to form an oxide film of substantially uniform thickness. The oxidation of the substrate takes place at a temperature below about 700° C., e.g., between about room temperature, 20° C., and about 500° C.

    摘要翻译： 一种氧化具有约30,000mm 2以上面积的基材的方法。 表面优选由含硅材料，例如硅，硅锗，碳化硅，氮化硅和金属硅化物组成。 通常对氧气，例如Ne，Ar，Kr，Xe和/或Rn不反应的含氧气体和稀释剂气体的混合物被电离以产生电子密度为至少约1×12cm× > -3，并且包含平均温度大于约1eV的环境电子。 衬底表面被能量粒子氧化，主要由等离子体中产生的原子氧组成，形成厚度基本均匀的氧化膜。 衬底的氧化在低于约700℃的温度下进行，例如在约室温，20℃和约500℃之间。

    Extendible process for improved top oxide layer for DRAM array and the gate interconnects while providing self-aligned gate contacts
    17.
    发明授权
    Extendible process for improved top oxide layer for DRAM array and the gate interconnects while providing self-aligned gate contacts 有权
    用于DRAM阵列和栅极互连的改进的顶部氧化物层，同时提供自对准栅极触点的可扩展工艺

    公开(公告)号：US06794242B1

    公开(公告)日：2004-09-21

    申请号：US09675435

    申请日：2000-09-29

    申请人： Thomas W. Dyer ,  Andreas Knorr ,  Laertis Economikos ,  Scott Halle ,  Rajeev Malik ,  Norbert Arnod

    发明人： Thomas W. Dyer ,  Andreas Knorr ,  Laertis Economikos ,  Scott Halle ,  Rajeev Malik ,  Norbert Arnod

    IPC分类号： H01L218242

    CPC分类号： H01L27/10864 ,  H01L27/10891

    摘要： A Top Oxide Method is used to form an oxide layer over an array of vertical transistors as in a trench dynamic random access memory (DRAM) array with vertically stacked access metal oxide semiconductor field effect transistors (MOSFETs). The Top Oxide is formed by first forming the vertical devices with the pad nitride remaining in place. Once the devices have been formed and the gate polysilicon has been planarized down to the surface of the pad nitride, the pad nitride is stripped away leaving the tops of the gate polysilicon plugs extending above the active silicon surface. This pattern of polysilicon plugs defines the pattern over which the Top Oxide is deposited. The deposited Top Oxide fills the regions between and on top of the polysilicon plugs. The Top Oxide is than planarized back to the tops of the polysilicon plugs so contacts can be made between the passing interconnects and the gates of the vertical devices. The Top Oxide layer serves to separate the passing interconnects from the active silicon thereby reducing capacitive coupling between the two levels and providing a robust etch-stop layer for the reactive ion etch (RIE) patterning of the subsequent interconnect level.

    摘要翻译： 如在具有垂直堆叠的存取金属氧化物半导体场效应晶体管（MOSFET）的沟槽动态随机存取存储器（DRAM）阵列中，顶部氧化物方法用于在垂直晶体管阵列上形成氧化物层。 顶部氧化物通过首先形成垂直装置而形成，其中衬垫氮化物保持就位。 一旦器件已经形成并且栅极多晶硅已经被平坦化到衬底氮化物的表面之下，衬垫氮化物被剥离掉，留下栅极多晶硅插塞的顶部延伸到活性硅表面之上。 这种多晶硅插塞的图形定义了顶部氧化物沉积的图案。 沉积的顶部氧化物填充多晶硅插塞之间和之上的区域。 顶部氧化物被平坦化回到多晶硅插塞的顶部，因此可以在通过的互连件和垂直装置的栅极之间形成接触。 顶部氧化物层用于将通过的互连与有源硅分离，从而减少两个电平之间的电容耦合，并提供用于后续互连电平的反应离子蚀刻（RIE）图案化的鲁棒蚀刻停止层。

    Self-aligned buried strap process using doped HDP oxide
    18.
    发明授权
    Self-aligned buried strap process using doped HDP oxide 失效
    使用掺杂HDP氧化物的自对准掩埋工艺

    公开(公告)号：US06667504B1

    公开(公告)日：2003-12-23

    申请号：US10249228

    申请日：2003-03-24

    申请人： Jochen Beintner ,  Wolfgang Bergner ,  Richard A. Conti ,  Andreas Knorr ,  Rolf Weis

    发明人： Jochen Beintner ,  Wolfgang Bergner ,  Richard A. Conti ,  Andreas Knorr ,  Rolf Weis

    IPC分类号： H01L27108

    CPC分类号： H01L27/10867 ,  H01L27/10864 ,  H01L29/945

    摘要： The invention provides a trench storage structure that includes a substrate having a trench, a capacitor conductor in the lower part of the trench, a conductive node strap in the trench adjacent the capacitor conductor, a trench top oxide above the capacitor conductor, and a conductive buried strap in the substrate adjacent the trench top oxide. The trench top oxide includes a doped trench top oxide layer above the conductive strap, and an undoped trench top oxide layer above the doped trench top oxide layer.

    摘要翻译： 本发明提供了一种沟槽存储结构，其包括具有沟槽的衬底，沟槽下部的电容器导体，与电容器导体相邻的沟槽中的导电节点带，电容器导体上方的沟槽顶部氧化物，以及导电 埋在衬底中的邻近沟槽顶部氧化物的衬底。 沟槽顶部氧化物包括导电带上方的掺杂沟槽顶部氧化物层和掺杂沟槽顶部氧化物层上方的未掺杂沟槽顶部氧化物层。

    Apparatus for the corrective positioning of a travelling web at right angles to the direction of travel
    19.
    发明授权
    Apparatus for the corrective positioning of a travelling web at right angles to the direction of travel 失效
    用于校正行进幅材与行进方向成直角的装置

    公开(公告)号：US5906305A

    公开(公告)日：1999-05-25

    申请号：US838032

    申请日：1997-04-22

    申请人： Andreas Knorr

    发明人： Andreas Knorr

    IPC分类号： B65H23/038 ,  B23Q15/00

    CPC分类号： B65H23/038 ,  B65H2404/1526 ,  B65H2701/1762

    摘要： An apparatus for the corrective positioning of a travelling web at right angles to the direction of travel comprises a tilting roll over which the web to be positioned is guided. At both ends of the roll, provision is made for rotary bearings, the respective opposite bearing member of which is articulated to a pendulum joint element. These two pendulum joints define an oblique tilting axis, which intersects the axis of rotation in the center of gravity of the roll and runs in a plane which cooperates with a vertical plane situated at right angles to the direction of travel to enclose an acute angle.

    摘要翻译： 用于将移动卷筒与行进方向成直角校正定位的装置包括倾斜辊，待定位的卷筒被定位在该倾斜辊上。 在辊的两端，设置用于旋转轴承，其相应的相对轴承构件铰接到摆动接头元件。 这两个摆锤关节限定了倾斜的倾斜轴线，该倾斜轴线在辊的重心与旋转轴线相交，并且在与垂直于行进方向成直角的垂直平面配合的平面中延伸以包围锐角。