公开(公告)号：US20150135834A1

公开(公告)日：2015-05-21

申请号：US14549544

申请日：2014-11-21

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Jong Woon KIM ,  Chang Hyun Lim ,  Sung Jun Lee ,  Jong Beom Kim

IPC: B81B3/00 ,  G01P15/02

CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  G01C19/5705 ,  G01P15/09 ,  G01P15/123 ,  G01P15/18 ,  G01P2015/0842

Abstract: There is provided a MEMS sensor including: a mass body; a support part floatably supporting the mass body; and a flexible beam having one end connected to the mass body and the other end connected to the support part. At least one end of the flexible beam connected to the mass body or the support part includes a curved portion to maximize an effective length supporting a load.

Abstract translation: 提供了一种MEMS传感器，包括：质量体; 支撑部件可浮动地支撑质量体; 以及柔性梁，其一端连接到质量体，另一端连接到支撑部。 连接到质量体或支撑部分的柔性梁的至少一端包括弯曲部分，以最大化支撑负载的有效长度。

公开(公告)号：US11870419B2

公开(公告)日：2024-01-09

申请号：US17222018

申请日：2021-04-05

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won Han ,  Sang Uk Son ,  Tae Yoon Kim ,  Chang Hyun Lim ,  Sang Heon Han ,  Jong Beom Kim

IPC: H03H9/17

CPC classification number: H03H9/173

Abstract: A bulk acoustic wave resonator includes a substrate, a first electrode, wherein a cavity is formed between the substrate and the first electrode, a piezoelectric layer disposed on the first electrode and overlapping at least a portion of the first electrode, a second electrode disposed on the piezoelectric layer and overlapping at least a portion of the piezoelectric layer, a passivation layer having at least a portion disposed on the second electrode and overlapping at least a portion of the second electrode, and a lower frame spaced apart from the substrate and having a portion of the cavity disposed therebetween. Any one of the second electrode and the passivation layer includes a protruding portion having a first thickness and an extended portion having a second thickness less than the first thickness, and an inner end of the lower frame and an end of the protruding portion are spaced apart horizontally.

公开(公告)号：US11705884B2

公开(公告)日：2023-07-18

申请号：US16942913

申请日：2020-07-30

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Chang Hyun Lim ,  Sang Hyun Yi ,  Yong Suk Kim ,  Sung Jun Lee ,  Jae Hyoung Gil ,  Dong Hyun Park

IPC: H03H9/13 ,  H03H9/17 ,  H03H9/02

CPC classification number: H03H9/131 ,  H03H9/02086 ,  H03H9/02118 ,  H03H9/17 ,  H03H9/173

Abstract: A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; a metal pad connected to the first electrode and the second electrode; and a protective layer disposed to cover at least the metal pad.

公开(公告)号：US11424729B2

公开(公告)日：2022-08-23

申请号：US16356164

申请日：2019-03-18

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun Lee ,  Tae Yoon Kim ,  Moon Chul Lee ,  Chang Hyun Lim ,  Nam Jung Lee ,  Il Han Lee

IPC: H03H9/02 ,  H03H9/17 ,  H03H3/02

Abstract: A bulk-acoustic wave resonator includes a substrate, a first layer, a second layer, a membrane layer, and a resonance portion. The substrate includes a substrate protection layer. The first layer is disposed on the substrate protection layer. The second layer is disposed outside of the first layer. The membrane layer forms a cavity with the substrate protection layer and the first layer. The resonance portion is disposed on the membrane layer. Either one or both of the substrate protection layer and the membrane layer includes a protrusion disposed in the cavity.

公开(公告)号：US11171628B2

公开(公告)日：2021-11-09

申请号：US15972694

申请日：2018-05-07

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Sung Sun Kim ,  Sang Kee Yoon ,  Chang Hyun Lim ,  Jin Suk Son ,  Ran Hee Shin ,  Je Hong Kyoung

IPC: H03H9/17 ,  H03H9/13 ,  H01L41/047 ,  H01L41/314 ,  H01L41/29 ,  H03H3/02 ,  H03H9/02 ,  H03H9/05

Abstract: An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.

公开(公告)号：US10958237B2

公开(公告)日：2021-03-23

申请号：US16395287

申请日：2019-04-26

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Yoon Kim ,  Chang Hyun Lim ,  Sang Kee Yoon ,  Tae Kyung Lee ,  Moon Chul Lee ,  Tae Hun Lee

IPC: H03H9/02 ,  H03H9/17 ,  H03H9/13 ,  H03H9/54 ,  H03H3/02

Abstract: A bulk-acoustic wave resonator includes a substrate, a cavity formed in the substrate, a first electrode, a piezoelectric layer, and a second electrode stacked in order on the substrate, a resonator defined by the first electrode, the piezoelectric layer, and the second electrode overlapping in a vertical direction in an upper portion of the cavity, an additional layer disposed on one surface of the first electrode arranged in a wiring region on an external side of the resonator, and a wiring electrode connected to the first electrode arranged in the wiring region. The first electrode forms a contact interfacial surface with the additional layer and the wiring electrode.

公开(公告)号：US10778179B2

公开(公告)日：2020-09-15

申请号：US15788062

申请日：2017-10-19

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Tae Yoon Kim ,  Sang Kee Yoon ,  Chang Hyun Lim ,  Jong Woon Kim ,  Moon Chul Lee

IPC: H03H9/02 ,  H03H9/54 ,  H03H9/17 ,  H03H9/13 ,  H03H3/02 ,  H01L41/053 ,  H01L41/29 ,  H01L41/31

Abstract: An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

公开(公告)号：US10734968B2

公开(公告)日：2020-08-04

申请号：US15647660

申请日：2017-07-12

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Tae Yoon Kim ,  Dae Ho Kim ,  Chang Hyun Lim ,  Tae Hun Lee ,  Sang Kee Yoon ,  Jong Woon Kim ,  Won Han ,  Moon Chul Lee

IPC: H03H9/02 ,  H03H9/56 ,  H03H3/02 ,  H03H9/17 ,  H03H9/60 ,  H01L41/047 ,  H03H9/54

Abstract: A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 Å or less.

公开(公告)号：US10554191B2

公开(公告)日：2020-02-04

申请号：US15623875

申请日：2017-06-15

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Chang Hyun Lim ,  Han Tae Kim ,  Tae Hun Lee ,  Tae Kyung Lee ,  Tae Yoon Kim

IPC: H03H9/15 ,  H01L41/09 ,  H01L41/053 ,  H01L41/047 ,  H03H9/10 ,  H03H9/64 ,  H03H9/00 ,  H01L41/277 ,  H03H9/17 ,  H03H3/02 ,  H01L41/23 ,  H01L41/25 ,  H03H9/02

Abstract: A bulk acoustic wave filter device and method thereof includes a first layer forming an air gap together with a substrate, a lower electrode disposed over the first layer, a piezoelectric layer disposed to cover a portion of the lower electrode, an upper electrode disposed over the piezoelectric layer, a frame layer disposed below the upper electrode, and a lower electrode reinforcing layer disposed on the lower electrode, other than portions in which the piezoelectric layer is disposed. The lower electrode reinforcing layer is formed by separating the lower electrode reinforcing layer from the upper electrode or the frame layer upon one of the upper electrode and the frame layer being formed.

公开(公告)号：US11323093B2

公开(公告)日：2022-05-03

申请号：US16875019

申请日：2020-05-15

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun Lee ,  Chang Hyun Lim ,  Sang Kee Yoon

IPC: H03H9/17 ,  H03H9/05 ,  H03H9/02 ,  H03H3/02 ,  H03H9/13

Abstract: A bulk-acoustic wave resonator includes: a resonator comprising a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed below the piezoelectric layer in the extension portion to raise the piezoelectric layer. The insertion layer may have a first inclined surface formed along a side surface facing the central portion, and the first electrode may have a second inclined surface extending from a lower end of the first inclined surface of the insertion layer.