公开(公告)号：US20210126615A1

公开(公告)日：2021-04-29

申请号：US16880231

申请日：2020-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongseop YOON ,  Sungchan KANG ,  Cheheung KIM ,  Choongho RHEE

IPC: H03H9/24 ,  H03H9/02

Abstract: A micromechanical resonator includes a support beam having a fixed end, and a free end configured to vibrate. The micromechanical resonator includes a lumped mass disposed on the free end. A height of the lumped mass is greater than a width of the lumped mass.

公开(公告)号：US20210036672A1

公开(公告)日：2021-02-04

申请号：US16791728

申请日：2020-02-14

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyeokki HONG ,  Ji-Hun LEE ,  Gyu-Hyeong CHO ,  Cheheung KIM ,  Hyunwook KANG

IPC: H03F3/45

Abstract: An amplifier includes: a first input transistor connected to a first input, a first output, and a power source or a ground, a second input transistor connected to a second input, a second output, and the power source or the ground; a first replica transistor connected to the first input, a detection node, and the power source or the ground; a second replica transistor connected to the second input, the detection node, and the power source or the ground; and a bias transistor connected to a bias voltage, the detection node, and the power source or the ground.

公开(公告)号：US20200212885A1

公开(公告)日：2020-07-02

申请号：US16599275

申请日：2019-10-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheheung KIM ,  Sungchan KANG ,  Choongho RHEE ,  Yongseop YOON ,  Hyeokki HONG

IPC: H03H9/56

Abstract: Provided are a resonator, a method of manufacturing the resonator, and a strain sensor and a sensor array including the resonator. The resonator is provided to extend in a lengthwise direction from a support. The resonator includes a single crystal material and is provided to extend in a crystal orientation that satisfies at least one from among a Young's modulus and a Poisson's ratio, from among crystal orientations of the single crystal material.

公开(公告)号：US20200074286A1

公开(公告)日：2020-03-05

申请号：US16556424

申请日：2019-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungho KIM ,  Cheheung KIM ,  Jaeho LEE

IPC: G06N3/063 ,  G11C11/54 ,  G06F7/501 ,  G06F7/523

Abstract: A neuromorphic apparatus configured to process a multi-bit neuromorphic operation including a single axon circuit, a single synaptic circuit, a single neuron circuit, and a controller. The single axon circuit is configured to receive, as a first input, an i-th bit of an n-bit axon. The single synaptic circuit is configured to store, as a second input, a j-th bit of an m-bit synaptic weight and output a synaptic operation value between the first input and the second input. The single neuron circuit is configured to obtain each bit value of a multi-bit neuromorphic operation result between the n-bit axon and the m-bit synaptic weight, based on the output synaptic operation value. The controller is configured to respectively determine the i-th bit and the j-th bit to be sequentially assigned for each time period of different time periods to the single axon circuit and the single synaptic circuit.

公开(公告)号：US20190072635A1

公开(公告)日：2019-03-07

申请号：US15908116

申请日：2018-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungchan KANG ,  Cheheung KIM ,  Sangha PARK ,  Yongseop YOON ,  Choongho RHEE ,  Hyeokki HONG

IPC: G01S3/808 ,  G10K11/178 ,  G10K11/36

CPC classification number: G01S3/8086 ,  G01S3/805 ,  G10K11/1781 ,  G10K11/36

Abstract: Provided is a sound direction detection sensor capable of detecting a direction from which sound is coming by using a multi-resonator array. The disclosed sound direction detection sensor includes two resonator arrays, each including a plurality of resonators having different resonance frequencies. The two resonator arrays have different directivities. Each resonator array serves as an audio sensor, and the sound direction detection sensor detects a direction from which sound is incident, regardless of a distance between audio sensors.

公开(公告)号：US20240234031A1

公开(公告)日：2024-07-11

申请号：US18351171

申请日：2023-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Narae HAN ,  Jeonggyu SONG ,  Beomseok KIM ,  Cheheung KIM ,  Haeryong KIM ,  Jooho LEE

IPC: H01G4/10 ,  H01L29/51 ,  H01L29/94 ,  H10B12/00

CPC classification number: H01G4/10 ,  H01L28/60 ,  H01L28/65 ,  H01L29/511 ,  H01L29/517 ,  H01L29/94 ,  H10B12/31 ,  H01G4/008

Abstract: A semiconductor device includes a first electrode, a second electrode spaced apart from the first electrode, a dielectric layer between the first electrode and the second electrode and including a metal oxide represented by MaOb, and a leakage current reducing layer on the dielectric layer between the first electrode and the second electrode and including an inorganic compound represented by Alx1Lx2Oy1Xy2, where a, b, M, L, X, x1, x2, y1, and y2 are as described in the description.

公开(公告)号：US20240213303A1

公开(公告)日：2024-06-27

申请号：US18347938

申请日：2023-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Boeun PARK ,  Haeryong KIM ,  Euncheol DO ,  Cheheung KIM ,  Jooho LEE

IPC: H01G4/08 ,  H01G4/33 ,  H01L29/51 ,  H01L29/94 ,  H10B12/00 ,  H01G4/008

CPC classification number: H01L28/56 ,  H01G4/085 ,  H01G4/33 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518 ,  H01L29/94 ,  H10B12/31 ,  H01G4/008

Abstract: Provided is a capacitor, a semiconductor device including the same, and an electronic apparatus including the semiconductor device, wherein the capacitor includes a first electrode including a first metal ion, a second electrode arranged spaced apart from the first electrode, a dielectric layer provided between the first electrode and the second electrode, and an interfacial layer provided between the first electrode and the dielectric layer and including a compound represented by MxOyNz, in which a diffusion energy barrier value of M is equal to or greater than a diffusion energy barrier value of the first metal ion.

公开(公告)号：US20240170212A1

公开(公告)日：2024-05-23

申请号：US18350600

申请日：2023-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Eunae CHO ,  Narae HAN ,  Beomseok KIM ,  Cheheung KIM ,  Jooho LEE ,  Wonsik CHOI

IPC: H01G4/10 ,  H01L29/51 ,  H01L29/94 ,  H10B12/00

CPC classification number: H01G4/10 ,  H01L28/60 ,  H01L28/65 ,  H01L29/511 ,  H01L29/517 ,  H01L29/94 ,  H10B12/31 ,  H01G4/1236

Abstract: A capacitor, a semiconductor device, and an electronic apparatus including the semiconductor device are disclosed. The capacitor includes a first electrode; a second electrode disposed apart from the first electrode; a dielectric film between the first electrode and the second electrode; and a leakage current reducing layer provided on the dielectric film between the first electrode and the second electrode and including MxAlyOz.

公开(公告)号：US20230214637A1

公开(公告)日：2023-07-06

申请号：US18120137

申请日：2023-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungho KIM ,  Cheheung KIM ,  Jaeho LEE

IPC: G06N3/063 ,  G06F7/523 ,  G06F7/50

CPC classification number: G06N3/063 ,  G06F7/523 ,  G06F7/50 ,  G06F2207/4824

Abstract: A 2D array-based neuromorphic processor includes: axon circuits each being configured to receive a first input corresponding to one bit from among bits indicating n-bit activation; first direction lines extending in a first direction from the axon circuits; second direction lines intersecting the first direction lines; synapse circuits disposed at intersections of the first direction lines and the second direction lines, and each being configured to store a second input corresponding to one bit from among bits indicating an m-bit weight and to output operation values of the first input and the second input; and neuron circuits connected to the first or second direction lines, each of the neuron circuits being configured to receive an operation value output from at least one of the synapse circuits, based on time information assigned individually to the synapse circuits, and to perform an arithmetic operation by using the operation values.

公开(公告)号：US20230176159A1

公开(公告)日：2023-06-08

申请号：US17745469

申请日：2022-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungchan KANG ,  Cheheung KIM ,  Choongho RHEE ,  Hyeokki HONG

IPC: G01S3/801 ,  H03H9/13 ,  G01S3/803

CPC classification number: G01S3/801 ,  G01S3/803 ,  H03H9/132

Abstract: Provided is a directional acoustic sensor including a support member, and a plurality of resonators extending in a longitudinal direction with respect to the support member, wherein each of the plurality of resonators includes a driver configured to move based on an input sound signal, and a sensor configured to sense a capacitance change based on an air gap that changes based on a movement of the driver.