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公开(公告)号：US10568077B2
公开(公告)日：2020-02-18
申请号：US15974022
申请日：2018-05-08
发明人： Youngbum Kim , Seunghoon Choi , Yongjun Kwak , Donghan Kim , Younsun Kim
摘要： The present disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method whereby a terminal transmits hybrid automatic repeat request (HARQ) acknowledgement (ACK)/negative ACK (NACK) information corresponding to downlink data received from a corresponding base station is provided.
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公开(公告)号：US10446834B2
公开(公告)日：2019-10-15
申请号：US14806969
申请日：2015-07-23
发明人： Andrei Kapylou , Donghan Kim , Jinhwan Park , Jayhyok Song , Sungjin Ahn , Byongyong Yu
IPC分类号： H01M4/36 , H01M4/13 , H01M4/50 , H01M4/60 , H01M4/62 , H01M4/505 , H01M4/131 , H01M4/485 , H01M4/525
摘要： A positive active material including: a core including an overlithiated lithium transition metal oxide, and a coating layer which is disposed on at least a portion of a surface of the core, the coating layer including a polymer having an oxidation potential of about 4.4 volts to about 4.7 volts versus lithium metal. Also a manufacturing method thereof, and a positive electrode and a lithium battery including the positive active material.
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13.发明授权公开(公告)号：US09922891B2
公开(公告)日：2018-03-20
申请号：US15404110
申请日：2017-01-11
发明人： Soyoung Lim , JaeMin Jung , Jeong-Kyu Ha , Donghan Kim
CPC分类号： H01L22/32 , G09G5/003 , G09G2310/0264 , H01L23/49811 , H01L23/49827 , H01L23/49838 , H01L23/4985 , H01L23/66 , H01L24/09 , H01L24/16 , H01L2223/6616 , H01L2224/0912 , H01L2224/1415 , H01L2224/16157 , H01L2224/16235 , H01L2224/16238 , H01L2224/73204
摘要： A semiconductor package may include a first output test pad and a second output test pad disposed on a first surface of an insulating film, and a semiconductor chip disposed between the first output test pad and the second output test pad on a second surface opposing to the first surface of the insulating film.
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公开(公告)号：US20170125801A1
公开(公告)日：2017-05-04
申请号：US15335781
申请日：2016-10-27
发明人： Donghan Kim , Ryounghee Kim , Jinhwan Park , Jayhyok Song , Byongyong Yu , Byungjin Choi
CPC分类号： H01M4/364 , H01M4/131 , H01M4/366 , H01M4/485 , H01M4/505 , H01M4/525 , H01M4/625 , H01M10/0525
摘要： A composite positive electrode active material includes: a first metal oxide that has a layered structure and is represented by Formula 1; and a second metal oxide that has a spinel structure and is represented by Formula 2, wherein the composite positive electrode active material includes a composite of the first metal oxide and the second metal oxide: LiMO2 Formula 1 LiMe2O4 Formula 2 wherein, in Formulas 1 and 2, M and Me are each independently at least one element selected from Groups 2 to 14 of the periodic table, and a molar ratio of Li/(M+Me) in the composite is less than 1.
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公开(公告)号：US09589842B2
公开(公告)日：2017-03-07
申请号：US14993054
申请日：2016-01-11
发明人： Inho Choi , Donghan Kim , Jae Choon Kim , Jikho Song , Mitsuo Umemoto
IPC分类号： H01L21/44 , H01L23/485 , H01L21/78 , H01L21/56 , H01L21/768 , H01L23/00 , H01L23/31
CPC分类号： H01L21/78 , H01L21/561 , H01L21/565 , H01L21/568 , H01L21/768 , H01L23/3128 , H01L23/3135 , H01L23/562 , H01L24/19 , H01L24/20 , H01L24/96 , H01L24/97 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/16227 , H01L2924/15311 , H01L2924/18162 , H01L2924/3025 , H01L2924/3511
摘要： A method of fabricating a semiconductor package is disclosed. The method includes disposing semiconductor chips on a support substrate, forming a protection layer covering top surfaces of the semiconductor chips, forming a molding layer covering the support substrate and the protection layer, and etching the molding layer to expose the protection layer.
摘要翻译： 公开了制造半导体封装的方法。 该方法包括将半导体芯片布置在支撑基板上，形成覆盖半导体芯片顶表面的保护层，形成覆盖支撑基板和保护层的模制层，以及蚀刻模塑层以露出保护层。
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16.发明申请公开(公告)号：US20160190575A1
公开(公告)日：2016-06-30
申请号：US14920968
申请日：2015-10-23
发明人： Byongyong Yu , Donghan Kim , Jinhwan Park , Jayhyok Song , Andrei KAPYLOU , Sungjin Ahn
IPC分类号： H01M4/485 , H01M10/0525 , C01G53/00 , H01M4/58
CPC分类号： H01M4/485 , C01G53/50 , C01P2002/50 , C01P2002/52 , C01P2002/70 , C01P2004/03 , C01P2004/61 , C01P2006/10 , H01M4/505 , H01M4/582 , H01M10/052 , H01M10/0525 , Y02T10/7011
摘要： A composite positive electrode active material including: an overlithiated layered oxide (OLO) including vanadium (V) and magnesium (Mg), wherein the vanadium and magnesium have a molar ratio of about 1:2. Also a method of manufacturing the composite positive electrode active material, a positive electrode including the composite positive electrode, and a lithium battery including the positive electrode.
摘要翻译： 一种复合正极活性物质，其特征在于，包括：包含钒（V）和镁（Mg）的叠层层状氧化物（OLO），其中所述钒和镁的摩尔比为约1:2。 还有一种制造复合正极活性材料的方法，包括复合正极的正极和包括正极的锂电池。
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公开(公告)号：US20240348273A1
公开(公告)日：2024-10-17
申请号：US18422913
申请日：2024-01-25
发明人： Paul Nicholas Fletcher , Donghan Kim , Fei Tong , Ziming He
CPC分类号： H04B1/0475 , H03F1/3241 , H03F3/245 , H03F2200/451 , H04B2001/0408
摘要： A distortion apparatus for a power amplifier comprises: pre-distortion circuitry that comprises a memory polynomial look-up-table (LUT) circuit; and post-distortion circuitry that updates the pre-distortion circuitry based on an output of the power amplifier. The pre-distortion circuitry comprises a plurality of LUTs. Each LUT corresponds to a different memory depth of a memory polynomial of a Volterra series. Each LUT indexed by an instantaneous power of an input sample delayed by an amount corresponds to a respective memory depth of each LUT. An output of the memory polynomial LUT circuit corresponds to a summation of an output of each LUT multiplied by the input sample delayed by the amount corresponding to the respective memory depth of each LUT, and an output of the pre-distortion circuitry is provided to the power amplifier.
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公开(公告)号：US11764352B2
公开(公告)日：2023-09-19
申请号：US17078269
申请日：2020-10-23
发明人： Donghan Kim , Ryounghee Kim , Jinhwan Park , Jayhyok Song , Byongyong Yu , Byungjin Choi
IPC分类号： H01M4/36 , H01M10/0525 , H01M4/131 , H01M4/525 , H01M4/485 , H01M4/505 , H01M4/62 , H01M10/052
CPC分类号： H01M4/364 , H01M4/131 , H01M4/366 , H01M4/485 , H01M4/505 , H01M4/525 , H01M4/625 , H01M10/052 , H01M10/0525
摘要： A composite positive electrode active material includes: a first metal oxide that has a layered structure and is represented by Formula 1; and a second metal oxide that has a spinel structure and is represented by Formula 2, wherein the composite positive electrode active material includes a composite of the first metal oxide and the second metal oxide:
LiMO2 Formula 1
LiMe2O4 Formula 2
wherein, in Formulas 1 and 2, M and Me are each independently at least one element selected from Groups 2 to 14 of the periodic table, and a molar ratio of Li/(M+Me) in the composite is less than 1.-
19.发明授权公开(公告)号：US11516758B2
公开(公告)日：2022-11-29
申请号：US17135432
申请日：2020-12-28
发明人： Youngwoo Kwak , Sungjin Park , Cheolkyu Shin , Donghan Kim , Younsun Kim , Hoondong Noh , Jeongho Yeo , Jinyoung Oh , Juho Lee , Seunghoon Choi , Heedon Gha , Youngbum Kim , Taehyoung Kim
IPC分类号： H04W56/00 , H04L25/02 , H04J11/00 , H04L25/00 , H04W52/02 , H04W72/00 , H04L5/00 , H04J13/00 , H04W48/10 , H04B7/00 , H04W88/02 , H04W88/08
摘要： The present disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. The present invention presents a method for efficiently estimating a physical channel and, according to the present invention, a terminal of a communication system receives a synchronization signal from a base station, receives a broadcast channel from the base station, and can estimate the broadcast channel on the basis of the synchronization signal.
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公开(公告)号：US11246121B2
公开(公告)日：2022-02-08
申请号：US16791125
申请日：2020-02-14
发明人： Youngbum Kim , Seunghoon Choi , Yongjun Kwak , Donghan Kim , Younsun Kim
摘要： The present disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method whereby a terminal transmits hybrid automatic repeat request (HARQ) acknowledgement (ACK)/negative ACK (HACK) information corresponding to downlink data received from a corresponding base station is provided.
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