公开(公告)号：US20220283519A1

公开(公告)日：2022-09-08

申请号：US17499182

申请日：2021-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon Na ,  Sungho Kang ,  Jaewhan Sung ,  Hak-Seok Lee ,  Hyunjune Cho

IPC: G03F7/20 ,  G03F1/86

Abstract: An EUV mask inspection system includes a mask receiving unit configured to receive a manufactured EUV mask, a main chamber configured to perform an inspection on the EUV mask, and a load-lock chamber disposed between the mask receiving unit and the main chamber. The load-lock chamber includes a mask table for loading the EUV mask, an UV lamp disposed adjacent the mask table in a first direction, a cold trap disposed adjacent the mask table in a second direction, and a vacuum pump. The first direction is a direction perpendicular to a sidewall of the mask table, and the second direction is a direction perpendicular to a top surface of the mask table. The UV lamp is configured to evaporate water molecules on the EUV mask by irradiating UV light onto the EUV mask. The cold trap is configured to trap the water molecules evaporated from the EUV mask.

公开(公告)号：US20130171744A1

公开(公告)日：2013-07-04

申请号：US13715099

申请日：2012-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JONG-HOON KANG ,  Taegon Kim ,  Hanmei Choi ,  Eunyoung Jo ,  Gonsu Kang ,  Sungho Kang ,  Sungho Heo

IPC: H01L21/324

CPC classification number: H01L21/324 ,  H01L21/67115 ,  H01L21/67288 ,  H01L21/681 ,  H01L22/10 ,  H01L22/12 ,  H01L22/20

Abstract: A method of thermally treating a wafer includes loading a wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient. A defect is detected in the wafer. The wafer is aligned to position the defect within one of the one or more regions of uniform temperature gradient. A rapid thermal process is performed on the wafer in the process chamber while the defect is positioned within one of the one or more regions of uniform temperature gradient.

Abstract translation: 一种热处理晶片的方法包括将晶片装载到具有一个或多个均匀温度梯度区域和一个或多个不均匀温度梯度区域的处理室中。 在晶片中检测到缺陷。 将晶片对准以将缺陷定位在均匀温度梯度的一个或多个区域之一内。 在处理室中的晶片上执行快速热处理，同时将缺陷定位在均匀温度梯度的一个或多个区域之一内。

公开(公告)号：US09576840B2

公开(公告)日：2017-02-21

申请号：US14543820

申请日：2014-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeyoung Park ,  Sungho Kang ,  Kichul Kim ,  Sunyoung Lee ,  Han Ki Lee ,  Bonyoung Koo

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/762 ,  H01L29/66 ,  H01L21/336 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/0206 ,  H01L21/302 ,  H01L21/306 ,  H01L21/32053 ,  H01L21/76224 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/34 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

Abstract: A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active region between the first plurality of recessed regions and the protruded active region having an upper surface and a sidewall, forming a device isolation film in the first plurality of recessed regions, the device isolation film exposing the upper surface and an upper portion of the sidewall of the protruded active region, and performing a first plasma treatment on the exposed surface of the protruded active region, wherein the plasma treatment is performed using a plasma gas containing at least one of an inert gas and a hydrogen gas in a temperature of less than or equal to about 700.

Abstract translation: 一种制造半导体器件的方法包括在衬底中形成第一多个凹陷区域，所述衬底在所述第一多个凹陷区域之间具有突出的有源区域和所述突出的有源区域具有上表面和侧壁，形成器件隔离 在所述第一多个凹陷区域中的膜，所述器件隔离膜暴露所述突出的有源区的所述上表面和所述侧壁的上部，并且对所述突出的有源区的所述暴露表面进行第一等离子体处理，其中所述等离子体处理 使用包含惰性气体和氢气中的至少一种的等离子体气体在小于或等于约700℃的温度下进行。

公开(公告)号：US08854614B2

公开(公告)日：2014-10-07

申请号：US13715099

申请日：2012-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Hoon Kang ,  Taegon Kim ,  Hanmei Choi ,  Eunyoung Jo ,  Gonsu Kang ,  Sungho Kang ,  Sungho Heo

IPC: G01N21/00 ,  H01L21/66 ,  H01L21/68 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/324 ,  H01L21/67115 ,  H01L21/67288 ,  H01L21/681 ,  H01L22/10 ,  H01L22/12 ,  H01L22/20

Abstract: A method of thermally treating a wafer includes loading a wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient. A defect is detected in the wafer. The wafer is aligned to position the defect within one of the one or more regions of uniform temperature gradient. A rapid thermal process is performed on the wafer in the process chamber while the defect is positioned within one of the one or more regions of uniform temperature gradient.

Abstract translation: 一种热处理晶片的方法包括将晶片装载到具有一个或多个均匀温度梯度区域和一个或多个不均匀温度梯度区域的处理室中。 在晶片中检测到缺陷。 将晶片对准以将缺陷定位在均匀温度梯度的一个或多个区域之一内。 在处理室中的晶片上执行快速热处理，同时将缺陷定位在均匀温度梯度的一个或多个区域之一内。