公开(公告)号：US20200091202A1

公开(公告)日：2020-03-19

申请号：US16690804

申请日：2019-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/1362 ,  H01L27/02 ,  H01L29/786

Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

公开(公告)号：US10585506B2

公开(公告)日：2020-03-10

申请号：US15218135

申请日：2016-07-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yukinori Shima ,  Kengo Akimoto ,  Yuki Okamoto

IPC: G06F3/041 ,  H01L27/32 ,  H01L29/786 ,  G06F3/042 ,  G09G3/3233 ,  H01L27/12 ,  G02F1/133

Abstract: A display device having high visibility regardless of illuminance of external light is provided. A display device with reduced power consumption is provided. The display device includes a first light-receiving circuit including a first light-receiving element; and a pixel circuit including a display element. The first light-receiving circuit and the pixel circuit are formed over the same substrate. The gray level of the display element is changed according to a change in the amount of light to which the first light-receiving element is exposed. In particular, the gray level of the display element is decreased with a decrease in the amount of light exposure.

公开(公告)号：US10559695B2

公开(公告)日：2020-02-11

申请号：US15584264

申请日：2017-05-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Akiharu Miyanaga ,  Kengo Akimoto ,  Kojiro Shiraishi

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L27/12

Abstract: To offer a semiconductor device including a thin film transistor having excellent characteristics and high reliability and a method for manufacturing the semiconductor device without variation. The summary is to include an inverted-staggered (bottom-gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used for a semiconductor layer and a buffer layer is provided between the semiconductor layer and source and drain electrode layers. An ohmic contact is formed by intentionally providing a buffer layer containing In, Ga, and Zn and having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrode layers.

公开(公告)号：US10418491B2

公开(公告)日：2019-09-17

申请号：US15846518

申请日：2017-12-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L21/20 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/12 ,  H01L21/263 ,  H01L29/66 ,  H01L29/24 ,  H01L29/417

Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

公开(公告)号：US10403763B2

公开(公告)日：2019-09-03

申请号：US15891583

申请日：2018-02-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Junichiro Sakata ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28

Abstract: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).

公开(公告)号：US10205030B2

公开(公告)日：2019-02-12

申请号：US15723479

申请日：2017-10-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu Miyairi ,  Kengo Akimoto ,  Yasuo Nakamura

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/26 ,  H01L29/66 ,  H01L21/02 ,  H01L21/465 ,  H01L21/467 ,  H01L21/4763 ,  H01L21/3213 ,  H01L29/06 ,  H01L29/10 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

公开(公告)号：US10103277B2

公开(公告)日：2018-10-16

申请号：US15648943

申请日：2017-07-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Hiroki Ohara ,  Tatsuya Honda ,  Takatsugu Omata ,  Yusuke Nonaka ,  Masahiro Takahashi ,  Akiharu Miyanaga

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L29/10

Abstract: A method comprising a step of forming an oxide semiconductor film over a substrate by a sputtering method while heating the substrate at a temperature of higher than 200° C. and lower than or equal to 400° C. is provided. The oxide semiconductor film comprises a crystalline region and is in a non-single-crystal state. The step of forming the oxide semiconductor film is performed by using a sputtering target comprising indium, gallium, zinc and oxygen and a sputtering gas comprising at least one of a rare gas and oxygen.

公开(公告)号：US10074646B2

公开(公告)日：2018-09-11

申请号：US15150744

申请日：2016-05-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: H01L27/02 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343 ,  H01L29/24 ,  G02F1/1362

CPC classification number: H01L27/0266 ,  G02F1/133305 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/134309 ,  G02F1/13624 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A protective circuit includes a non-linear element, which further includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a conductive layer and a second oxide semiconductor layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with side face portions of the gate insulating layer and the conductive layer of the first wiring layer and the second wiring layer and a side face portion and a top face portion of the second oxide semiconductor layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

公开(公告)号：US09911860B2

公开(公告)日：2018-03-06

申请号：US15146980

申请日：2016-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Toshinari Sasaki

IPC: H01L29/02 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G02F1/167 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.

公开(公告)号：US09893200B2

公开(公告)日：2018-02-13

申请号：US14972964

申请日：2015-12-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Junichiro Sakata ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga

IPC: H01L29/04 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/28079 ,  H01L21/28158 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

Abstract: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).