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    LIGHT EMITTING DIODE
    12.
    发明申请
    LIGHT EMITTING DIODE 有权

    公开(公告)号：US20210257528A1

    公开(公告)日：2021-08-19

    申请号：US17246856

    申请日：2021-05-03

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Se Hee OH ,  Hyun A KIM ,  Jong Kyu KIM ,  Hyoung Jin LIM

    IPC: H01L33/62 ,  H01L33/10 ,  H01L33/44 ,  H01L27/15 ,  H01L33/38 ,  H01L33/40 ,  H01L25/075 ,  H01L33/32 ,  H01L33/50 ,  H01L33/64

    Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa with an active layer and a second conductivity type semiconductor layer disposed thereon, a first contact layer comprising an outer contact portion contacting the first conductivity type semiconductor layer near an edge thereof and an inner contact portion contacting the first conductivity type semiconductor layer in a region surrounded by the outer contact portion; a second contact layer disposed on the mesa and contacting the second conductivity type semiconductor layer; a first insulation layer covering the mesa, insulating the first contact layer, and exposing the first conductivity type semiconductor layer for the outer contact portion and the inner contact portion to contact the first conductivity type semiconductor layer, wherein the outer contact portion and the first insulation layer alternately contact the first conductivity type semiconductor layer along a side surface of the mesa.

    LIGHT EMITTING DEVICE
    13.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20200052175A1

    公开(公告)日：2020-02-13

    申请号：US16536819

    申请日：2019-08-09

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Se Hee OH ,  Min Woo KANG ,  Jong Kyu KIM ,  Hyun A KIM

    IPC: H01L33/62 ,  H01L27/15

    Abstract: A light emitting device includes a first light emitting cell, a second light emitting cell, a first conductive pattern, a second conductive pattern, and a connection pattern. The connection pattern includes contact portions electrically connected to a second conductivity type semiconductor layer of the first light emitting cell and a first conductivity type semiconductor layer of the second light emitting cell. At an edge of a first region facing the second light emitting cell, one contact portion of the first conductive pattern is disposed between the contact portions of the connection pattern electrically connected to the second conductivity type semiconductor layer of the first light emitting cell, and one contact portion of the first conductive pattern is open outwards.

    HIGHLY RELIABLE LIGHT EMITTING DIODE
    14.
    发明申请
    HIGHLY RELIABLE LIGHT EMITTING DIODE 审中-公开

    公开(公告)号：US20190296204A1

    公开(公告)日：2019-09-26

    申请号：US16464679

    申请日：2017-10-11

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Se Hee OH ,  Hyun A KIM ,  Joon Sup LEE ,  Min Woo KANG ,  Hyoung Jin LIM

    IPC: H01L33/64 ,  H01L33/40 ,  H01L33/20 ,  H01L33/62 ,  H01L27/15 ,  H01L33/10

    Abstract: A light emitting diode including a first semiconductor layer, a mesa disposed thereon and including a second semiconductor layer and an active layer, an ohmic reflection layer disposed on the mesa to form an ohmic contact with the second semiconductor layer, a lower insulation layer covering the mesa and the ohmic reflection layer and partially exposing the first semiconductor layer and the ohmic reflection layer, a first pad metal layer disposed on the lower insulation layer and electrically connected to the first semiconductor layer, a metal reflection layer disposed on the lower insulation layer and laterally spaced apart from the first pad metal layer, and an upper insulation layer covering the first pad metal layer and the metal reflection layer, and having a first opening exposing the first pad metal layer, in which at least a portion of the metal reflection layer covers a side surface of the mesa.

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