LIGHT EMITTING DIODE WITH HIGH EFFICIENCY
    11.
    发明申请

    公开(公告)号:US20190148588A1

    公开(公告)日:2019-05-16

    申请号:US16246192

    申请日:2019-01-11

    Abstract: A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.

    LIGHT EMITTING DIODE
    12.
    发明申请
    LIGHT EMITTING DIODE 有权
    发光二极管

    公开(公告)号:US20170069789A1

    公开(公告)日:2017-03-09

    申请号:US15354928

    申请日:2016-11-17

    Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

    Abstract translation: 提供一种发光二极管,其包括:在一个方向上具有细长矩形形状的基板; 位于所述基板上并具有用于暴露第一导电半导体层的开口的发光结构; 设置成更靠近所述基板的第一角部的第一电极焊盘; 第二电极焊盘,被设置为相对靠近所述衬底的与所述第一拐角相对的第二角部; 从所述第一电极焊盘延伸的第一延伸部; 以及从所述第二电极焊盘延伸到所述第一延伸部的侧面的第二延伸部和第三延伸部,其中连接所述第二延伸部的端部和所述第三延伸部的端部的假想线位于所述第一电极焊盘和所述第一角部之间 。

    LIGHT EMITTING DEVICE AND LIGHT EMITTING MODULE HAVING THE SAME

    公开(公告)号:US20230352619A1

    公开(公告)日:2023-11-02

    申请号:US18134009

    申请日:2023-04-12

    Inventor: Yong Woo Ryu

    CPC classification number: H01L33/08 H01L33/24 H01L33/10 H01L33/58 H01L33/385

    Abstract: A light emitting device including a first sub-unit emitting light of a first wavelength; a second sub-unit disposed under the first sub-unit and emitting light of a second wavelength longer than the first wavelength; and a third sub-unit disposed under the second sub-unit and emitting light of a third wavelength longer than the first wavelength, in which the first sub-unit, the second sub-unit, and the third sub-unit include a first LED stack, a second LED stack, and a third LED stack, respectively, and the first sub-unit further includes a first upper contact electrode and a first lower contact electrode electrically connected to an upper surface and a lower surface of the first LED stack, respectively, and an extraction element for increasing a light extraction efficiency of the first wavelength.

    LIGHT EMITTING DIODE HAVING DISTRIBUTED BRAGG REFLECTOR

    公开(公告)号:US20200212263A1

    公开(公告)日:2020-07-02

    申请号:US16354815

    申请日:2019-03-15

    Abstract: A light emitting diode including a light emitting structure including an active layer, a first distributed Bragg reflector (DBR) disposed on one side of the light emitting structure to reflect light emitted from the light emitting structure, and an interfacial layer disposed between the light emitting structure and the first DBR, in which the first DBR includes first material layers having a low refractive index and second material layers having a high refractive index alternately stacked one above another, the interfacial layer has a lower refractive index than the first material layers, and has a thickness greater than a thickness of each of the first and second material layers, and one a second material layer of the second material layers that is closest to the interfacial layer includes a first sub-layer and a second sub-layer, the first sub-layer having a density lower than that of the second sub-layer.

    Light emitting diode with high efficiency

    公开(公告)号:US10181548B2

    公开(公告)日:2019-01-15

    申请号:US15490492

    申请日:2017-04-18

    Abstract: A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.

    Light emitting diode having improved current spreading efficiency, improved mechanical reliability, or some combination thereof

    公开(公告)号:US10172190B2

    公开(公告)日:2019-01-01

    申请号:US15579370

    申请日:2016-05-18

    Abstract: A light emitting diode including a first semiconductor layer and a plurality of mesas including a second semiconductor layer and an active layer interposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer including an exposed region between the plurality of mesas, a current blocking layer disposed on a portion of the plurality of mesas and a portion of the exposed region, a transparent electrode layer covering the second semiconductor layer and the current blocking layer, and a second electrode disposed on the current blocking layer and the transparent electrode layer and electrically connected to the second semiconductor layer. The current blocking layer includes a connecting portion extending from a first mesa to a second mesa adjacent to the first mesa and a protruding portion protruding from the connecting portion and disposed on the exposed region.

    Light emitting device for display and display apparatus having the same

    公开(公告)号:US12046587B2

    公开(公告)日:2024-07-23

    申请号:US18226779

    申请日:2023-07-27

    CPC classification number: H01L25/0756 H01L25/0753 H01L33/42 H01L33/62

    Abstract: A light emitting module including a circuit board and a lighting emitting device thereon and including first, second, and third LED stacks each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the third LED stack, a second planarization layer on the first LED stack, a lower conductive material extending along sides of the first planarization layer, the second LED stack, the first bonding layer, and electrically connected to the first conductivity type semiconductor layers of each LED stack, respectively, and an upper conductive material between the circuit board and the lower conductive material.

    Light emitting device for display and display apparatus having the same

    公开(公告)号:US11756940B2

    公开(公告)日:2023-09-12

    申请号:US17902893

    申请日:2022-09-04

    CPC classification number: H01L25/0756 H01L25/0753 H01L33/42 H01L33/62

    Abstract: A light emitting module including a circuit board and a lighting emitting device thereon and including first, second, and third LED stacks each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the third LED stack, a second planarization layer on the first LED stack, a lower conductive material extending along sides of the first planarization layer, the second LED stack, the first bonding layer, and electrically connected to the first conductivity type semiconductor layers of each LED stack, respectively, and an upper conductive material between the circuit board and the lower conductive material, in which a width of an upper end of the upper conductive material is greater than a width of the corresponding upper conductive material.

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