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    DELIVERY DEVICE, MANUFACTURING SYSTEM AND PROCESS OF MANUFACTURING
    12.
    发明申请
    DELIVERY DEVICE, MANUFACTURING SYSTEM AND PROCESS OF MANUFACTURING 审中-公开
    交付设备，制造系统和制造流程

    公开(公告)号：US20160168697A1

    公开(公告)日：2016-06-16

    申请号：US14946115

    申请日：2015-11-19

    Applicant: SILCOTEK CORP.

    Inventor： David A. SMITH ,  Min YUAN ,  James B. MATTZELA

    IPC: C23C16/44 ,  C23C16/24

    CPC classification number: C23C16/44 ,  C23C16/24 ,  C23C16/4402 ,  C23C16/4404

    Abstract: A delivery device, manufacturing system, and process of manufacturing are disclosed. The delivery device includes a feed tube and a chemical vapor deposition coating applied over an inner surface of the feed tube, the chemical vapor deposition coating being formed from decomposition of dimethylsilane. The manufacturing system includes the delivery device and a chamber in selective fluid communication with the delivery device. The process of manufacturing uses the manufacturing system to produce an article.

    Abstract translation: 公开了一种输送装置，制造系统和制造方法。 输送装置包括施加在进料管的内表面上的进料管和化学气相沉积涂层，化学气相沉积涂层由二甲基硅烷的分解形成。 制造系统包括输送装置和与输送装置选择性流体连通的室。 制造过程使用制造系统来生产制品。

    SEMICONDUCTOR FABRICATION PROCESS
    13.
    发明申请
    SEMICONDUCTOR FABRICATION PROCESS 有权
    半导体制造工艺

    公开(公告)号：US20140357091A1

    公开(公告)日：2014-12-04

    申请号：US14464748

    申请日：2014-08-21

    Applicant: SILCOTEK CORP.

    Inventor： James B. MATTZELA

    IPC: H01L21/02

    CPC classification number: C23C16/56 ,  B05D1/60 ,  C09D7/00 ,  C23C16/22

    Abstract: Semiconductor fabrication processes are described. An embodiment of the semiconductor fabrication process includes providing a layer formed by decomposition of dimethylsilane through chemical vapor deposition, the layer being applied by a fluid material, and then positioning the layer in a system for producing a semiconductor product. Additionally or alternatively, the semiconductor product is produced and/or the layer is on a substrate.

    Abstract translation: 描述半导体制造工艺。 半导体制造工艺的一个实施例包括通过化学气相沉积提供由二甲基硅烷分解形成的层，该层由流体材料施加，然后将该层定位在用于制造半导体产品的系统中。 另外或替代地，制造半导体产品和/或该层在基底上。

    COLD THERMAL CHEMICAL VAPOR DEPOSITION
    14.
    发明公开
    COLD THERMAL CHEMICAL VAPOR DEPOSITION 审中-公开

    公开(公告)号：US20240117495A1

    公开(公告)日：2024-04-11

    申请号：US17768249

    申请日：2020-10-13

    Applicant: SILCOTEK CORP.

    Inventor： Geoffrey K. WHITE ,  Nicholas P. DESKEVICH ,  James B. MATTZELA ,  Gary A. BARONE ,  David A. SMITH ,  Pierre A. LECLAIR ,  Min YUAN ,  Jesse BISCHOF

    IPC: C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46

    CPC classification number: C23C16/52 ,  C23C16/4404 ,  C23C16/45523 ,  C23C16/46

    Abstract: Cold thermal chemical vapor deposition coatings, articles, and processes are disclosed. Specifically, a cold thermal chemical vapor deposition process includes positioning an article, heating a precursor gas to at least a decomposition temperature of the precursor gas to produce a deposition gas, introducing the deposition gas to a coating vessel, and depositing a coating from the deposition gas onto the article within the coating vessel. The article remains at a temperature below the decomposition temperature throughout the introducing and depositing of the deposition gas. The coating on the article has a gradient formed by the depositing of the coating having no flow for a period of time. The coated article includes a thermally-sensitive substrate (the thermally-sensitive substrate capable of being modified by a temperature of 300 degrees Celsius) and a coating the thermally-sensitive substrate.

    CHEMICAL VAPOR DEPOSITION PROCESS AND COATED ARTICLE
    16.
    发明申请
    CHEMICAL VAPOR DEPOSITION PROCESS AND COATED ARTICLE 审中-公开

    公开(公告)号：US20190309414A1

    公开(公告)日：2019-10-10

    申请号：US16379236

    申请日：2019-04-09

    Applicant: SILCOTEK CORP.

    Inventor： Thomas F. VEZZA ,  James B. MATTZELA ,  Gary A. BARONE ,  Jesse BISCHOF ,  David A. SMITH

    IPC: C23C16/44

    Abstract: Chemical vapor deposition processes and coated articles are disclosed. The process includes a first introducing of a first amount of silane to the enclosed chamber, the first amount of the silane remaining within the enclosed chamber for a first period of time, a first decomposing of the first amount of the silane during at least a portion of the first period of time, a second introducing of a second amount of the silane to the enclosed chamber, the second amount of the silane remaining within the enclosed chamber for a second period of time, and a second decomposing of the second amount of the silane during at least a portion of the second period of time. The process is devoid of inert gas purging between the first decomposing and the second introducing and/or produces a chemical vapor deposition coating devoid of hydrogen bubbles.

    COATED ARTICLE
    17.
    发明申请
    COATED ARTICLE 审中-公开

    公开(公告)号：US20190169750A1

    公开(公告)日：2019-06-06

    申请号：US15895566

    申请日：2018-02-13

    Applicant: SILCOTEK CORP.

    Inventor： Min YUAN ,  David A. SMITH ,  Paul H. SILVIS ,  James B. MATTZELA

    IPC: C23C16/52 ,  C23C16/56 ,  C23C16/22 ,  C23C16/30 ,  C23C16/46

    Abstract: Coated articles are disclosed. One embodiment of a coated article includes a substrate capable of being subjected to corrosion and a deposited coating on the substrate. The deposited coating has silicon with the substrate resisting corrosion with the deposited coating on the substrate when exposed to 15% NaClO by a rate of at least 5% greater than the corrosion rate of a coating applied with the same process but without introducing the deposition gas at the sub-decomposition temperature and/or the substrate with the deposited coating having a 15% NaClO corrosion rate of between 0 and 3 mils per year.

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