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公开(公告)号：US12119617B2
公开(公告)日：2024-10-15
申请号：US16978531
申请日：2019-02-06
Applicant: Sony Corporation
Inventor： Kentaro Fujii , Tatsushi Hamaguchi , Rintaro Koda
CPC classification number: H01S5/18361 , H01S5/04254 , H01S5/18311 , H01S5/34333 , H01S5/34346
Abstract: A light emitting element includes a stacked structure including, in a stacked state, a first light reflection layer 41 in which a plurality of thin films is stacked, a light emitting structure 20, and a second light reflection layer 42 in which a plurality of thin films is stacked. The light emitting structure includes a first compound semiconductor layer 21, an active layer 23 and, a second compound semiconductor layer 22 which are stacked. The light emitting structure 20 is formed with a light absorbing material layer 71 (32) in parallel to a virtual plane occupied by the active layer 23. Let the oscillation wavelength be λ0, let the equivalent refractive index from the active layer to the light absorbing material layer be neq, let the optical distance from the active layer to the light absorbing material layer be Lop, and let Λ≡{(2m+1)λ0}/(4neq) (where m is an integer of equal to or more than 0), then, the value of Lop is a value different from Λ, and the thickness Tave of the second light reflection layer 42 is a value different from the theoretical thickness TDBR of the second light reflection layer 42.
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公开(公告)号：US11979001B2
公开(公告)日：2024-05-07
申请号：US17264558
申请日：2019-05-28
Applicant: Sony Corporation
Inventor： Hiroshi Nakajima , Rintaro Koda , Tatsushi Hamaguchi
CPC classification number: H01S5/18338 , H01S5/0425 , H01S5/18361 , H01S5/34333 , H01S5/04253 , H01S5/18341
Abstract: A surface-emitting semiconductor laser including: an active layer including a nitride semiconductor; a first semiconductor layer of a first electrical conduction type and a second semiconductor layer of a second electrical conduction type that are opposed to each other with the active layer therebetween; and a current confinement layer that is opposed to the active layer with the second semiconductor layer therebetween and has an opening, in which a side surface of the current confinement layer is inclined at at least a portion of a peripheral edge of the opening.
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公开(公告)号：US20210098971A1
公开(公告)日：2021-04-01
申请号：US17067451
申请日：2020-10-09
Applicant: Sony Corporation
Inventor： Tomoyuki Oki , Yuji Masui , Yoshinori Yamauchi , Rintaro Koda , Takahiro Arakida
IPC: H01S5/183 , H01S5/22 , H01S5/343 , H01S5/223 , H01S5/187 , H01S5/022 , B82Y20/00 , H01S5/042 , H01S5/18 , H01S5/125
Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
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公开(公告)号：US10833479B2
公开(公告)日：2020-11-10
申请号：US16173226
申请日：2018-10-29
Applicant: Sony Corporation
Inventor： Tomoyuki Oki , Yuji Masui , Yoshinori Yamauchi , Rintaro Koda , Takahiro Arakida
IPC: H01S5/00 , H01S5/183 , H01S5/22 , H01S5/343 , H01S5/223 , H01S5/187 , H01S5/022 , B82Y20/00 , H01S5/042 , H01S5/18 , H01S5/125
Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
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公开(公告)号：US10686291B2
公开(公告)日：2020-06-16
申请号：US15556970
申请日：2015-12-17
Applicant: Sony Corporation
Inventor： Hideki Watanabe , Katsunori Yanashima , Rintaro Koda , Moe Takeo , Nobukata Okano
IPC: H01S5/14 , H01S5/022 , H01S5/343 , H01S5/0625 , H01S5/06 , H01S5/024 , H01S5/026 , H01S5/065 , H01S5/10 , H01S5/22 , H01S5/50
Abstract: A semiconductor light emitting element has a laminated structure formed by laminating a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. The semiconductor light emitting element satisfies ΔI2>ΔI1, where ΔI1 is an operating current range when the temperature of the active layer is T1, and ΔI2 is the operating current range when the temperature of the active layer is T2 (where T2>T1). The semiconductor light emitting element satisfies P2>P1, where P1 is a maximum optical output emitted when the temperature of the active layer is T1, and P2 is the maximum optical output emitted when the temperature of the active layer is T2 (where T2>T1).
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Patent Agency Ranking
公开(公告)号：US20170012409A1
公开(公告)日：2017-01-12
申请号：US15272181
申请日：2016-09-21
Applicant: Sony Corporation
Inventor： Tomoyuki Oki , Yuji Masui , Yoshinori Yamauchi , Rintaro Koda , Takahiro Arakida
CPC classification number: H01S5/18308 , B82Y20/00 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/125 , H01S5/18 , H01S5/18311 , H01S5/18338 , H01S5/187 , H01S5/22 , H01S5/221 , H01S5/2231 , H01S5/343 , H01S5/34313 , H01S5/3432 , H01S2301/176 , H01S2301/18
Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
Abstract translation: 发光元件包括台面结构，其中第一导电类型的第一化合物半导体层，有源层和第二导电类型的第二化合物半导体层以该顺序设置，其中第一 化合物半导体层和第二化合物半导体层具有由从台面结构的侧壁部向内延伸的绝缘区域包围的电流收缩区域; 设置成围绕台面结构的壁结构; 连接台面结构和壁结构的至少一个桥结构，壁结构和桥结构各自具有与设置绝缘区域的台面结构部分相同的层结构; 第一电极; 以及设置在所述壁结构的顶面上的第二电极。
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公开(公告)号：US09407064B2
公开(公告)日：2016-08-02
申请号：US14823868
申请日：2015-08-11
Applicant: Sony Corporation
Inventor： Tomoyuki Oki , Yuji Masui , Yoshinori Yamauchi , Rintaro Koda , Takahiro Arakida
IPC: H01S5/00 , H01L33/44 , H01L33/32 , H01S5/125 , H01S5/22 , H01S5/343 , H01S5/223 , H01S5/187 , H01S5/022 , B82Y20/00 , H01S5/042 , H01S5/183 , H01S5/18
CPC classification number: H01S5/18308 , B82Y20/00 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/125 , H01S5/18 , H01S5/18311 , H01S5/18338 , H01S5/187 , H01S5/22 , H01S5/221 , H01S5/2231 , H01S5/343 , H01S5/34313 , H01S5/3432 , H01S2301/176 , H01S2301/18
Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
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公开(公告)号：US12088059B2
公开(公告)日：2024-09-10
申请号：US17281532
申请日：2019-09-06
Applicant: SONY CORPORATION
Inventor： Kentaro Fujii , Tatsushi Hamaguchi , Rintaro Koda
CPC classification number: H01S5/0281 , H01S5/18369 , H01S5/343
Abstract: A light emitting element comprising a layered structure configured by layering a first light reflecting layer 41 configured by layering a plurality of thin films, a light emitting structure 20, and a second light reflecting layer 42 configured by layering a plurality of thin films, wherein the light emitting structure 20 is configured by layering, from the first light reflecting layer side, a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22, a second electrode 32 and an intermediate layer 70 are formed between the second compound semiconductor layer 22 and the second light reflecting layer 42 from the second compound semiconductor layer side, and the value of a surface roughness of a second surface 72 of the intermediate layer 70 in contact with the second light reflecting layer 42 is less than the value of a surface roughness of a first surface 71 of the intermediate layer 70 facing the second electrode 32.
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公开(公告)号：US11221446B2
公开(公告)日：2022-01-11
申请号：US16605439
申请日：2018-02-16
Applicant: SONY CORPORATION
Inventor： Rintaro Koda , Shunsuke Kono
Abstract: A monolithic laser device assembly 10A in the present disclosure includes a first gain portion 20 having a first end portion 20A and a second end portion 20B, a second gain portion 30 having a third end portion 30A and a fourth end portion 30B, one or multiple ring resonators 40, a semiconductor optical amplifier 50 for amplifying a laser light emitted from the first gain portion 20, and a pulse selector 60 disposed between the first gain portion 20 and the semiconductor optical amplifier 50, in which the ring resonator 40 is optically coupled with the first gain portion 20 and with the second gain portion 30, and laser oscillation is performed on either the first gain portion 20 or the second gain portion 30.
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公开(公告)号：US20190074662A1
公开(公告)日：2019-03-07
申请号：US16173226
申请日：2018-10-29
Applicant: Sony Corporation
Inventor： Tomoyuki Oki , Yuji Masui , Yoshinori Yamauchi , Rintaro Koda , Takahiro Arakida
IPC: H01S5/183 , H01S5/223 , B82Y20/00 , H01S5/22 , H01S5/022 , H01S5/187 , H01S5/343 , H01S5/18 , H01S5/125 , H01S5/042
Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
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