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    Light emitting element
    1.
    发明授权
    Light emitting element 有权

    公开(公告)号：US11728625B2

    公开(公告)日：2023-08-15

    申请号：US16956376

    申请日：2018-12-11

    申请人： Sony Corporation

    发明人： Tatsushi Hamaguchi ,  Jugo Mitomo ,  Rintaro Koda

    IPC分类号： H01S5/183 ,  H01S5/343 ,  H01S5/02 ,  H01S5/042

    CPC分类号： H01S5/34333 ,  H01S5/0206 ,  H01S5/0207 ,  H01S5/0208 ,  H01S5/04257 ,  H01S5/18361

    摘要： A light emitting element of the present disclosure includes a compound semiconductor substrate 11, a stacked structure 20 including a GaN-based compound semiconductor, a first light reflection layer 41, and a second light reflection layer 42. The stacked structure 20 includes, in a stacked state a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22. The first light reflection layer 41 is disposed on the compound semiconductor substrate 11 and has a concave mirror section 43. The second light reflection layer 42 is disposed on a second surface side of the second compound semiconductor layer 22 and has a flat shape. The compound semiconductor substrate 11 includes a low impurity concentration compound semiconductor substrate or a semi-insulating compound semiconductor substrate.

    LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    发光元件及其制造方法

    公开(公告)号：US20150349494A1

    公开(公告)日：2015-12-03

    申请号：US14823868

    申请日：2015-08-11

    申请人： Sony Corporation

    发明人： Tomoyuki Oki ,  Yuji Masui ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Takahiro Arakida

    IPC分类号： H01S5/187 ,  H01S5/022 ,  H01S5/042 ,  H01S5/343 ,  H01S5/183

    CPC分类号： H01S5/18308 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/125 ,  H01S5/18 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/187 ,  H01S5/22 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/343 ,  H01S5/34313 ,  H01S5/3432 ,  H01S2301/176 ,  H01S2301/18

    摘要： A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

    摘要翻译： 发光元件包括台面结构，其中第一导电类型的第一化合物半导体层，有源层和第二导电类型的第二化合物半导体层以该顺序设置，其中第一 化合物半导体层和第二化合物半导体层具有由从台面结构的侧壁部向内延伸的绝缘区域包围的电流收缩区域; 设置成围绕台面结构的壁结构; 连接台面结构和壁结构的至少一个桥结构，壁结构和桥结构各自具有与设置绝缘区域的台面结构部分相同的层结构; 第一电极; 以及设置在所述壁结构的顶面上的第二电极。