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    Semiconductor laser element
    2.
    发明授权
    Semiconductor laser element 有权

    公开(公告)号：US09787061B2

    公开(公告)日：2017-10-10

    申请号：US15034640

    申请日：2014-11-06

    申请人： SONY CORPORATION

    发明人： Shinichi Wada ,  Masaru Kuramoto ,  Hideki Watanabe

    IPC分类号： G01S5/00 ,  H01S5/343 ,  H01S5/065 ,  H01S5/042 ,  H01S5/06 ,  H01S5/14 ,  H01S5/22 ,  H01S5/028

    CPC分类号： H01S5/34333 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/065 ,  H01S5/141 ,  H01S5/2214

    摘要： A semiconductor laser element includes a stacked structure body, a second electrode 62, and a first electrode 61; a ridge stripe structure 71 formed of at least part of the stacked structure body is formed; a side structure body 72 formed of the stacked structure body is formed on both sides of the ridge stripe structure 71; the second electrode 62 is separated into a first portion for sending a direct current to the first electrode via a light emitting region and a second portion 62B for applying an electric field to a saturable absorption region; a protection electrode 81 is formed on a portion adjacent to the second portion 62B of the second electrode of at least one side structure body 72; and an insulating layer 56 made of an oxide insulating material is formed to extend from on a portion of the ridge stripe structure 71 to on a portion of the side structure body 72, on which portions neither the second electrode nor the protection electrode 81 is formed.

    Stereolithographic object, product, and method of manufacturing product
    5.
    发明授权
    Stereolithographic object, product, and method of manufacturing product 有权

    公开(公告)号：US10792860B2

    公开(公告)日：2020-10-06

    申请号：US15571889

    申请日：2016-03-24

    申请人： SONY CORPORATION

    发明人： Tomomasa Watanabe ,  Hideki Watanabe

    IPC分类号： B29C64/135 ,  B29C67/00 ,  B33Y80/00 ,  B33Y10/00 ,  B33Y70/00 ,  B33Y50/02 ,  A45D29/00 ,  A61Q3/02 ,  B32B7/02

    摘要： A stereolithographic object includes a first curable resin part that is provided at a position suitable for contact with a base member and one or a plurality of second curable resin parts that are provided to be in contact with the first curable resin part and to allow part of a side surface of the first curable resin part to be exposed. The first curable resin part includes resin that has a functional group number and a polymer polymerization degree that are relatively small compared with those of the second curable resin part. The one or the plurality of second curable resin parts includes resin that has a functional group number and a polymer polymerization degree that are relatively great compared with those of the first curable resin part.

    SEMICONDUCTOR LASER DEVICE ASSEMBLY
    7.
    发明申请
    SEMICONDUCTOR LASER DEVICE ASSEMBLY 有权
    半导体激光器件组件

    公开(公告)号：US20150085891A1

    公开(公告)日：2015-03-26

    申请号：US14390689

    申请日：2013-04-03

    申请人： Sony Corporation

    发明人： Hideki Watanabe ,  Shunsuke Kono ,  Masaru Kuramoto

    IPC分类号： H01S5/12

    CPC分类号： H01S5/12 ,  B82Y20/00 ,  H01S3/105 ,  H01S5/06253 ,  H01S5/0657 ,  H01S5/101 ,  H01S5/14 ,  H01S5/141 ,  H01S5/143 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/323 ,  H01S5/32341 ,  H01S5/34333

    摘要： A semiconductor laser device assembly includes (A) a semiconductor laser element and (B) a diffraction grating that configures an external resonator, returns diffraction light other than zero-th order diffraction light to the semiconductor laser element, and outputs the zero-th order diffraction light to the outside. An extension direction of a diffraction surface of the diffraction grating and a main vibration direction of a field of a laser beam incident on the diffraction grating are substantially parallel to each other.

    摘要翻译： 半导体激光器件组件包括（A）半导体激光元件和（B）构成外部谐振器的衍射光栅，将除了零级衍射光之外的衍射光返回到半导体激光元件，并输出零级 衍射光到外面。 衍射光栅的衍射面的延伸方向和入射在衍射光栅上的激光束的场的主振动方向基本上彼此平行。

    Semiconductor optical amplifier
    10.
    再颁专利
    Semiconductor optical amplifier 有权
    半导体光放大器

    公开(公告)号：USRE45973E1

    公开(公告)日：2016-04-12

    申请号：US14614652

    申请日：2015-02-05

    申请人： Sony Corporation ,  Tohoku University

    发明人： Masaru Kuramoto ,  Masao Ikeda ,  Rintaro Koda ,  Tomoyuki Oki ,  Hideki Watanabe ,  Takao Miyajima ,  Hiroyuki Yokoyama

    IPC分类号： H01S5/00 ,  H01S5/10 ,  H01S5/16 ,  H01S5/323 ,  H01S5/50

    CPC分类号： H01S5/1064 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0657 ,  H01S5/16 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/50

    摘要： A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.

    摘要翻译： 半导体光放大器包括：依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构，具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层 由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。 层叠结构具有脊形条纹结构。 当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时，满足Win，Wout> Win。 载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。