公开(公告)号：US20140151836A1

公开(公告)日：2014-06-05

申请号：US14173590

申请日：2014-02-05

Applicant: Sony Corporation

Inventor： Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

IPC: H01L31/16

CPC classification number: H01L31/16 ,  B82Y20/00 ,  G02B6/4214 ,  G02B6/4246 ,  H01L31/173 ,  H01S5/02284 ,  H01S5/0262 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/3432 ,  H01S2301/176

Abstract: The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.

Abstract translation: 光学半导体装置在n-GaAs衬底上包括表面发射半导体激光器件和集成在激光器周围的光电二极管，其间隔着隔离区域。 激光装置由n-DBR反射镜，有源区和p-DBR反射镜组成，并且包括柱状分层结构，其侧壁被绝缘膜覆盖。 光电二极管形成在基板上，并且具有圆形层状结构，其中i-GaAs层和p-GaAs层围绕激光器件，其间插入在i-GaAs和p-GaAs层之间的隔离区域和激光器件。 光电二极管的直径小于与光半导体装置光耦合的光纤芯的直径。 由于激光器件和光电二极管是单片集成的，所以器件不需要光学对准，因此便于与光纤的光耦合。

公开(公告)号：US09911894B2

公开(公告)日：2018-03-06

申请号：US14689892

申请日：2015-04-17

Applicant: Sony Corporation

Inventor： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC: H01L33/00 ,  H01L31/0328 ,  C30B23/04 ,  C30B25/04 ,  C30B29/40 ,  H01L21/02 ,  H01L33/08 ,  H01L27/15 ,  H01L33/24 ,  H01L33/32 ,  H01L33/12 ,  H01L33/22 ,  H01L33/46

CPC classification number: H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

Abstract: A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

公开(公告)号：US20150228846A1

公开(公告)日：2015-08-13

申请号：US14689892

申请日：2015-04-17

Applicant: Sony Corporation

Inventor： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/32 ,  H01L33/08 ,  H01L33/24

CPC classification number: H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

Abstract: A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

Abstract translation: 一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长 第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：US10686291B2

公开(公告)日：2020-06-16

申请号：US15556970

申请日：2015-12-17

Applicant: Sony Corporation

Inventor： Hideki Watanabe ,  Katsunori Yanashima ,  Rintaro Koda ,  Moe Takeo ,  Nobukata Okano

IPC: H01S5/14 ,  H01S5/022 ,  H01S5/343 ,  H01S5/0625 ,  H01S5/06 ,  H01S5/024 ,  H01S5/026 ,  H01S5/065 ,  H01S5/10 ,  H01S5/22 ,  H01S5/50

Abstract: A semiconductor light emitting element has a laminated structure formed by laminating a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. The semiconductor light emitting element satisfies ΔI2>ΔI1, where ΔI1 is an operating current range when the temperature of the active layer is T1, and ΔI2 is the operating current range when the temperature of the active layer is T2 (where T2>T1). The semiconductor light emitting element satisfies P2>P1, where P1 is a maximum optical output emitted when the temperature of the active layer is T1, and P2 is the maximum optical output emitted when the temperature of the active layer is T2 (where T2>T1).