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    Microelectromechanical sensing structure for a capacitive acoustic transducer including an element limiting the oscillations of a membrane, and manufacturing method thereof
    13.
    发明授权
    Microelectromechanical sensing structure for a capacitive acoustic transducer including an element limiting the oscillations of a membrane, and manufacturing method thereof 有权
    一种用于电容式声换能器的微机电感测结构，包括限制膜的振荡的元件及其制造方法

    公开(公告)号：US09226079B2

    公开(公告)日：2015-12-29

    申请号：US14220985

    申请日：2014-03-20

    Applicant: STMicroelectronics S.r.l.

    Inventor： Alessandra Sciutti ,  Matteo Perletti ,  Sebastiano Conti ,  Roberto Carminati

    IPC: H04R25/00 ,  H04R19/00 ,  H04R19/04

    CPC classification number: H04R19/005 ,  B81B7/0029 ,  B81B2201/0257 ,  B81B2203/0118 ,  B81B2203/0127 ,  G01L9/0073 ,  H04R19/04

    Abstract: A microelectromechanical sensing structure for a capacitive acoustic transducer, including: a semiconductor substrate; a rigid electrode; and a membrane set between the substrate and the rigid electrode, the membrane having a first surface and a second surface, which are in fluid communication, respectively, with a first chamber and a second chamber, respectively, the first chamber being delimited at least in part by a first wall portion and a second wall portion formed at least in part by the substrate, the second chamber being delimited at least in part by the rigid electrode, the membrane being moreover designed to undergo deformation following upon incidence of pressure waves and facing the rigid electrode so as to form a sensing capacitor having a capacitance that varies as a function of the deformation of the membrane. The structure moreover includes a beam, which is connected to the first and second wall portions and is designed to limit the oscillations of the membrane.

    Abstract translation: 一种用于电容式声换能器的微机电感测结构，包括：半导体衬底; 刚性电极; 以及膜，其设置在所述基底和所述刚性电极之间，所述膜具有第一表面和第二表面，所述第一表面和第二表面分别与第一腔室和第二腔室流体连通，所述第一腔室至少在 部分由第一壁部分和至少部分地由基底形成的第二壁部分，第二室至少部分地由刚性电极限定，该膜还被设计成在压力波入射之后经历变形，并且面向 刚性电极，以形成感测电容器，该感测电容器具有作为膜的变形的函数而变化的电容。 该结构还包括梁，其连接到第一和第二壁部分并被设计成限制膜的振荡。

    CAPACITIVE MICRO-ELECTRO-MECHANICAL FORCE SENSOR AND CORRESPONDING FORCE SENSING METHOD
    14.
    发明申请
    CAPACITIVE MICRO-ELECTRO-MECHANICAL FORCE SENSOR AND CORRESPONDING FORCE SENSING METHOD 有权
    电容式微机电力传感器及相应的力传感方法

    公开(公告)号：US20150135860A1

    公开(公告)日：2015-05-21

    申请号：US14539640

    申请日：2014-11-12

    Applicant: STMicroelectronics S.r.l.

    Inventor： Sebastiano Conti ,  Daniele Prati ,  Domenico Giusti

    IPC: G01L1/14

    CPC classification number: G01L1/142 ,  G01L1/148

    Abstract: A MEMS force sensor has: a substrate; a fixed electrode coupled to the substrate; and a mobile electrode suspended above the substrate at the fixed electrode to define a sensing capacitor, the mobile electrode being designed to undergo deformation due to application of a force to be detected. A dielectric material region is set on the fixed electrode and spaced apart by an air gap from the mobile electrode, in resting conditions. The mobile electrode comes to bear upon the dielectric material region upon application of a minimum detectable value of the force, so that a contact surface between the mobile electrode and the dielectric material region increases, in particular in a substantially linear way, as the force increases.

    Abstract translation: MEMS力传感器具有：基板; 耦合到所述衬底的固定电极; 以及在所述固定电极处悬置在所述基板上方的移动电极，以限定感测电容器，所述移动电极被设计为由于施加要检测的力而发生变形。 在静止状态下，介电材料区域设置在固定电极上并与气动间隙隔开间隔开。 通过施加力的最小可检测值，移动电极承受电介质材料区域，使得当力增加时，移动电极和电介质材料区域之间的接触表面尤其以基本线性的方式增加 。

    WAFER LEVEL ASSEMBLY OF A MEMS SENSOR DEVICE AND RELATED MEMS SENSOR DEVICE
    15.
    发明申请
    WAFER LEVEL ASSEMBLY OF A MEMS SENSOR DEVICE AND RELATED MEMS SENSOR DEVICE 有权
    MEMS传感器装置和相关MEMS传感器装置的水平方向组装

    公开(公告)号：US20140319630A1

    公开(公告)日：2014-10-30

    申请号：US14265053

    申请日：2014-04-29

    Applicant: STMicroelectronics S.r.l.

    Inventor： Sebastiano Conti ,  Matteo Perletti ,  Roberto Carminati ,  Lorenzo Baldo ,  Alessandro Morcelli

    IPC: H04R19/00

    CPC classification number: H04R19/005 ,  H01L29/84 ,  H04R1/04 ,  H04R19/04

    Abstract: An assembly of a MEMS sensor device envisages: a first die, integrating a micromechanical detection structure and having an external main face; a second die, integrating an electronic circuit operatively coupled to the micromechanical detection structure, electrically and mechanically coupled to the first die and having a respective external main face. Both of the external main faces of the first die and of the second die are set in direct contact with an environment external to the assembly, without interposition of a package.

    Abstract translation: MEMS传感器装置的组件设想：第一管芯，集成微机械检测结构并具有外部主面; 集成了可操作地耦合到微机械检测结构的电子电路，电和机械耦合到第一管芯并且具有相应的外部主面。 第一模具和第二模具的外部主面都被设置成与组件外部的环境直接接触，而不插入封装件。

    PRESSURE SENSOR GENERATING A TRANSDUCED SIGNAL WITH REDUCED AMBIENT TEMPERATURE DEPENDENCE, AND MANUFACTURING METHOD THEREOF
    17.
    发明申请
    PRESSURE SENSOR GENERATING A TRANSDUCED SIGNAL WITH REDUCED AMBIENT TEMPERATURE DEPENDENCE, AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20190120710A1

    公开(公告)日：2019-04-25

    申请号：US16220498

    申请日：2018-12-14

    Applicant: STMicroelectronics S.R.L.

    Inventor： Enri Duqi ,  Sebastiano Conti ,  Sonia Costantini

    IPC: G01L9/00 ,  G01L9/06 ,  B81C1/00 ,  B81B7/00

    Abstract: A pressure sensor designed to detect a value of ambient pressure of the environment external to the pressure sensor includes: a first substrate having a buried cavity and a membrane suspended over the buried cavity; a second substrate having a recess, hermetically coupled to the first substrate so that the recess defines a sealed cavity the internal pressure value of which provides a pressure-reference value; and a channel formed at least in part in the first substrate and configured to arrange the buried cavity in communication with the environment external to the pressure sensor. The membrane undergoes deflection as a function of a difference of pressure between the pressure-reference value in the sealed cavity and the ambient-pressure value in the buried cavity.

    Acoustic transducer
    20.
    发明授权
    Acoustic transducer 有权
    声换能器

    公开(公告)号：US09363608B2

    公开(公告)日：2016-06-07

    申请号：US13936104

    申请日：2013-07-05

    Applicant: Omron Corporation ,  STMicroelectronics S.r.l.

    Inventor： Takashi Kasai ,  Shobu Sato ,  Yuki Uchida ,  Igino Padovani ,  Filippo David ,  Sebastiano Conti

    IPC: H04R19/04 ,  H04R3/00 ,  H04R19/00 ,  H04R19/01 ,  H04R31/00 ,  B81B3/00 ,  H04R1/08

    CPC classification number: H04R19/04 ,  B81B3/0021 ,  H04R1/023 ,  H04R1/086 ,  H04R3/00 ,  H04R3/005 ,  H04R19/005 ,  H04R19/016 ,  H04R31/00 ,  H04R2201/003 ,  H04R2499/11

    Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

    Abstract translation: 提供一种声换能器，包括：半导体基板; 设置在所述半导体基板上方的包括振动电极的振动膜; 以及设置在所述半导体衬底上方的固定膜，包括固定电极，所述声换能器根据所述振动电极和所述固定电极之间的电容的变化来检测声波，将所述声波转换为电信号，并输出所述电信号。 振动电极和固定电极中的至少一个分为多个分割电极，多个分割电极输出电信号。

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