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    SPAD PHOTODIODE OF HIGH QUANTUM EFFICIENCY
    11.
    发明申请
    SPAD PHOTODIODE OF HIGH QUANTUM EFFICIENCY 有权
    高品质SPAD光电效能

    公开(公告)号：US20150053924A1

    公开(公告)日：2015-02-26

    申请号：US14464898

    申请日：2014-08-21

    Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

    Inventor： Michel Marty ,  Laurent Frey ,  Sebastien Jouan ,  Salim Boutami

    IPC: H01L31/0352 ,  H01L27/146

    CPC classification number: H01L31/035236 ,  G01T1/248 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/02327 ,  H01L31/107

    Abstract: A SPAD-type photodiode has a semiconductor substrate with a light-receiving surface. A lattice formed of interlaced strips made of a first material covers the light receiving surface. The lattice includes lattice openings with lateral walls covered by a spacer made of a second material. Then first and second materials have different optical indices, and further each optical index is less than or equal to the substrate optical index. A pitch of the lattice is of the order of a magnitude of an operating wavelength of the photodiode. The first and second materials are transparent at that operating wavelength. The lattice is made of a conductive material electrically coupled to an electrical connection node (for example, a bias voltage node).

    Abstract translation: SPAD型光电二极管具有具有受光面的半导体基板。 由第一材料制成的交错条形成的格子覆盖光接收表面。 格子包括具有被由第二材料制成的间隔物覆盖的侧壁的格子开口。 然后第一和第二材料具有不同的光学指数，并且每个光学指数还小于或等于基底光学指数。 晶格的间距是光电二极管的工作波长大小的数量级。 第一和第二材料在该工作波长下是透明的。 晶格由电耦合到电连接节点（例如，偏压节点）的导电材料制成。

    IMAGE SENSOR ILLUMINATED AND CONNECTED ON ITS BACK SIDE
    14.
    发明申请
    IMAGE SENSOR ILLUMINATED AND CONNECTED ON ITS BACK SIDE 有权
    图像传感器在其背面照亮并连接

    公开(公告)号：US20160172404A1

    公开(公告)日：2016-06-16

    申请号：US14840665

    申请日：2015-08-31

    Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (Crolles 2) SAS

    Inventor： Nayera Ahmed ,  Michel Marty

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14689

    Abstract: An image sensor including a semiconductor layer; a stack of insulating layers resting on the back side of the semiconductor layer; a conductive layer portion extending along part of the height of the stack and flush with the exposed surface of the stack; laterally-insulated conductive fingers extending through the semiconductor layer from its front side and penetrating into said layer portion; laterally-insulated conductive walls separating pixel areas, these walls extending through the semiconductor layer from its front side and having a lower height than the fingers; and an interconnection structure resting on the front side of the semiconductor layer and including vias in contact with the fingers.

    Abstract translation: 包括半导体层的图像传感器; 沉积在半导体层的背面上的一叠绝缘层; 导电层部分，其沿所述堆叠的高度的一部分延伸并与所述堆叠的暴露表面齐平; 横向绝缘的导电指状物从其前侧延伸穿过半导体层并且穿透到所述层部分中; 分隔像素区域的横向绝缘导电壁，这些壁从其前侧延伸穿过半导体层并且具有比手指低的高度; 以及搁置在半导体层的前侧上并且包括与手指接触的通孔的互连结构。

    BACK-SIDE ILLUMINATED IMAGE SENSOR WITH A JUNCTION INSULATION
    17.
    发明申请
    BACK-SIDE ILLUMINATED IMAGE SENSOR WITH A JUNCTION INSULATION 有权
    具有连接绝缘的背面照明图像传感器

    公开(公告)号：US20140217541A1

    公开(公告)日：2014-08-07

    申请号：US14247084

    申请日：2014-04-07

    Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles 2) SAS

    Inventor： Michel Marty ,  François Roy ,  Jens Prima

    IPC: H01L27/146

    CPC classification number: H01L27/1464 ,  H01L27/1463 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14689

    Abstract: A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer.

    Abstract translation: 一种用于形成背面照明图像传感器的方法，包括以下步骤：a）从前表面形成与衬底相反的导电类型的掺杂多晶硅区域，其垂直于正面延伸， 进入第一层; b）使衬底从其后表面变薄到达多晶硅区域，同时保持第一层的条带; c）在所述薄化衬底的后表面上沉积与所述衬底相反的导电类型的掺杂非晶硅层; 和d）在能够将非晶硅层转变成结晶层的温度下退火。

    Back-side illuminated image sensor with a junction insulation
    19.
    发明授权
    Back-side illuminated image sensor with a junction insulation 有权
    具有结合绝缘的背面照明图像传感器

    公开(公告)号：US08963273B2

    公开(公告)日：2015-02-24

    申请号：US14247084

    申请日：2014-04-07

    Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles 2) SAS

    Inventor： Michel Marty ,  François Roy ,  Jens Prima

    IPC: H01L31/00 ,  H01L27/146

    CPC classification number: H01L27/1464 ,  H01L27/1463 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14689

    Abstract: A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer.

    Abstract translation: 一种用于形成背面照明图像传感器的方法，包括以下步骤：a）从前表面形成与衬底相反的导电类型的掺杂多晶硅区域，其垂直于正面延伸， 进入第一层; b）使衬底从其后表面变薄到达多晶硅区域，同时保持第一层的条带; c）在所述薄化衬底的后表面上沉积与所述衬底相反的导电类型的掺杂非晶硅层; 和d）在能够将非晶硅层转变成结晶层的温度下退火。

    Thick multilayer interference filter having a lower metal layer located within an interconnect region
    20.
    发明授权
    Thick multilayer interference filter having a lower metal layer located within an interconnect region 有权
    厚多层干涉滤光器，其具有位于互连区域内的较低金属层

    公开(公告)号：US09214485B2

    公开(公告)日：2015-12-15

    申请号：US14452702

    申请日：2014-08-06

    Applicant: STMicroelectronics SA ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

    Inventor： Laurent Frey ,  Michel Marty

    IPC: H01L27/146 ,  G02B5/28

    CPC classification number: H01L27/14621 ,  G02B5/28 ,  G02B5/288 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14685

    Abstract: A multilayer optical filter is provided for an integrated circuit including a substrate and a metallization layer interconnection part. The optical filter is formed from a first filter part located within the interconnection part and positioned over a photosensitive region of the substrate. The optical filter further includes a second filter part positioned above the first filter part and the interconnection part. The first and second filter parts each include a metal layer. The first and second filter parts are separated from each other as a function of a wavelength in vacuum of an optical signal to be filtered and received by the photosensitive region.

    Abstract translation: 为包括基板和金属化层互连部件的集成电路提供了多层光学滤波器。 滤光器由位于互连部分内的第一过滤器部分形成，并位于衬底的光敏区域上。 光滤波器还包括位于第一滤波器部分和互连部分上方的第二滤波器部分。 第一和第二过滤器部件各自包括金属层。 第一和第二滤光器部分根据要被滤光并由感光区域接收的光信号的真空中的波长彼此分离。

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