公开(公告)号：US20210242387A1

公开(公告)日：2021-08-05

申请号：US17158904

申请日：2021-01-26

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Paolo FERRARI ,  Flavio Francesco VILLA ,  Luca ZANOTTI ,  Andrea NOMELLINI ,  Luca SEGHIZZI

IPC: H01L35/32 ,  H01L35/34

Abstract: A thermoelectric generator includes a substrate and one or more thermoelectric elements on the substrate and each configured to convert a thermal drop across the thermoelectric elements into an electric potential by Seebeck effect. The thermoelectric generator includes a cavity between the substrate and the thermoelectric elements. The thermoelectric generator includes, within the cavity, a support structure for supporting the thermoelectric elements. The support structure has a thermal conductivity lower than a thermal conductivity of the substrate.

公开(公告)号：US20210143286A1

公开(公告)日：2021-05-13

申请号：US17153599

申请日：2021-01-20

Applicant: STMicroelectronics S.r.l.

Inventor： Flavio Francesco VILLA ,  Marco MORELLI ,  Marco MARCHESI ,  Simone Dario MARIANI ,  Fabrizio Fausto Renzo TOIA

IPC: H01L29/94 ,  H01L29/66 ,  H01L27/06 ,  H01L49/02

Abstract: A semiconductor body includes a front side and a back side and is configured to support an electronic circuit. A buried region is provided in the semiconductor body at a location between the electronic circuit and the back side. The buried region includes a layer of conductive material and a dielectric layer, where the dielectric layer is arranged between the layer of conductive material and the semiconductor body. A conductive path extends between the buried region and the front side to form a path for electrical access to the layer of conductive material. A capacitor is thus formed with the layer of conductive material providing a capacitor plate and the dielectric layer providing the capacitor dielectric. A further capacitor plate is provided by the semiconductor body, or by a further layer of conductive material in the buried region.

公开(公告)号：US20240124299A1

公开(公告)日：2024-04-18

申请号：US18486044

申请日：2023-10-12

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Paolo FERRARI ,  Flavio Francesco VILLA

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00269 ,  B81B3/0021 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2203/0118 ,  B81C2203/0145

Abstract: Process for manufacturing a MEMS device, including: forming a dielectric region which coats part of a semiconductive substrate of a first semiconductive wafer; forming a region which is permeable to gases and coats the dielectric region; coupling the first semiconductive wafer to a second semiconductive wafer so as to form a first chamber, which houses a first movable mass and has a pressure equal to a first value, and a second chamber, which houses a second movable mass and has a pressure equal to the first value, the permeable region facing the second chamber; selectively removing a portion of the semiconductor substrate and an underlying portion of the dielectric region, so as to expose a part of the permeable region, so as to allow gas exchanges through the permeable region; placing the first and the second semiconductive wafers in an environment with a pressure equal to a second value, so that the pressure in the second chamber becomes equal to the second value; and subsequently forming, on the exposed part of the permeable region, a sealing region impermeable to gases.

公开(公告)号：US20230064114A1

公开(公告)日：2023-03-02

申请号：US17821717

申请日：2022-08-23

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Paolo FERRARI ,  Flavio Francesco VILLA ,  Roberto CAMPEDELLI ,  Luca LAMAGNA ,  Enri DUQI ,  Mikel AZPEITIA URQUIA ,  Silvia NICOLI ,  Maria Carolina TURI

IPC: B81C1/00 ,  G01L9/00

Abstract: The present disclosure is directed to a method for manufacturing a micro-electro-mechanical device. The method includes the steps of forming, on a substrate, a first protection layer of crystallized aluminum oxide, impermeable to HF; forming, on the first protection layer, a sacrificial layer of silicon oxide removable with HF; forming, on the sacrificial layer, a second protection layer of crystallized aluminum oxide; exposing a sacrificial portion of the sacrificial layer; forming, on the sacrificial portion, a first membrane layer of a porous material, permeable to HF; forming a cavity by removing the sacrificial portion through the first membrane layer; and sealing pores of the first membrane layer by forming a second membrane layer on the first membrane layer.

公开(公告)号：US20220246832A1

公开(公告)日：2022-08-04

申请号：US17722713

申请日：2022-04-18

Applicant: STMicroelectronics S.r.l.

Inventor： Maria Fortuna BEVILACQUA ,  Flavio Francesco VILLA ,  Rossana SCALDAFERRI ,  Valeria CASUSCELLI ,  Andrea DI MATTEO ,  Dino FARALLI

IPC: H01L41/113 ,  H01L41/047 ,  H01L41/22 ,  H02N2/18 ,  H01L41/053 ,  H01L41/187 ,  H01L41/25 ,  H01L41/29 ,  H01L41/332

Abstract: A MEMS piezoelectric device includes a monolithic semiconductor body having first and second main surfaces extending parallel to a horizontal plane formed by first and second horizontal axes. A housing cavity is arranged within the monolithic semiconductor body. A membrane is suspended above the housing cavity at the first main surface. A piezoelectric material layer is arranged above a first surface of the membrane with a proof mass coupled to a second surface, opposite to the first surface, along the vertical axis. An electrode arrangement is provided in contact with the piezoelectric material layer. The proof mass causes deformation of the piezoelectric material layer in response to environmental mechanical vibrations. The proof mass is coupled to the membrane by a connection element arranged, in a central position, between the membrane and the proof mass in the direction of the vertical axis.

公开(公告)号：US20180178251A1

公开(公告)日：2018-06-28

申请号：US15626824

申请日：2017-06-19

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Francesco FONCELLINO ,  Flavio Francesco VILLA ,  Andrea DI MATTEO

IPC: B06B1/06 ,  H01L41/113 ,  B06B1/02 ,  H01L41/293 ,  H01L41/332

CPC classification number: B06B1/0622 ,  B06B1/0207 ,  B06B1/06 ,  G01H11/08 ,  G10K9/122 ,  G10K13/00 ,  H01L41/1138 ,  H01L41/293 ,  H01L41/332

Abstract: A piezoelectric micro-machined ultrasonic transducer (PMUT) comprising: a semiconductor body having a first cavity and a membrane, which is suspended over the first cavity and faces a front side of the semiconductor body; and a piezoelectric transducer assembly extending at least in part on the membrane, which may be actuated for generating a deflection of the membrane. A second cavity extends buried in a peripheral region of the membrane and delimits a central region of the membrane. Moreover, the peripheral portion has a stiffness lower than the stiffness of the central portion.

公开(公告)号：US20130273548A1

公开(公告)日：2013-10-17

申请号：US13858156

申请日：2013-04-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ubaldo MASTROMATTEO ,  Flavio Francesco VILLA ,  Gabriele BARLOCCHI

IPC: G01N1/28

CPC classification number: G01N1/28 ,  B01L3/502 ,  B01L3/5027 ,  B01L2300/0681 ,  B01L2300/0829 ,  B01L2300/0864 ,  B01L2300/0867 ,  B01L2400/0478 ,  B01L2400/0616 ,  C12N15/1017 ,  C12Q1/6806 ,  G01N1/405

Abstract: The device has a fluid inlet; a filtering compartment, connected to the fluid inlet and accommodating a filtering matrix in presence of adsorption agents; a fluidic circuit connected downstream of the filtering compartment and including a discharge circuit and a loading circuit; a discharge chamber, connected downstream of the discharge circuit; a preparation outlet, connected downstream of the loading circuit; and suction pumps, connected to the fluidic circuit and configured so as to fluidically connect the filtering compartment alternatively to the discharge circuit or to the loading circuit.

Abstract translation: 该装置具有流体入口; 过滤室，连接到流体入口并在吸附剂存在下容纳过滤基质; 连接在过滤室下游的流体回路，包括一个放电回路和一个加载电路; 放电室，连接在放电电路的下游; 一个准备出口，连接在负载电路的下游; 和抽吸泵，其连接到流体回路并且构造成将过滤室与排放回路或加载回路交替地流体连接。