公开(公告)号：US20210098561A1

公开(公告)日：2021-04-01

申请号：US16885598

申请日：2020-05-28

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok PARK ,  Myounghwa KIM ,  Tae Sang KIM ,  Hyungjun KIM ,  Yeon Keon MOON ,  Geunchul PARK ,  Sangwoo SOHN ,  Jun Hyung LIM ,  Kyung Jin JEON ,  Hye Lim CHOI

IPC: H01L27/32

Abstract: A display device includes a first pixel, a second pixel, a first data line connected to the first pixel, and a second data line connected to the second pixel. Each of the first pixel and the second pixel includes a transistor including a conductive layer, a semiconductor layer on the conductive layer, a gate electrode on the semiconductor layer, and a source/drain electrode connected to the semiconductor layer, a capacitor including a first capacitor electrode in a same layer as the gate electrode and a second capacitor electrode on the first capacitor electrode, and a light emitting device on the transistor and the capacitor. The first data line is in a same layer as the source/drain electrode, and the second data line is in a same layer as one of the conductive layer and the second capacitor electrode.

公开(公告)号：US20190312061A1

公开(公告)日：2019-10-10

申请号：US16371433

申请日：2019-04-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoung Seok SON ,  Myounghwa KIM ,  Jaybum KIM ,  Yeon Keon MOON ,  Masataka KANO

IPC: H01L27/12 ,  H01L27/32

Abstract: A display apparatus includes a base substrate, a polysilicon active pattern disposed on the base substrate, including polycrystalline silicon, including a source region and a drain region each doped with impurities and a channel region between the source region and the drain region, and including indium, a first gate electrode overlapping the channel region, and a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region.

公开(公告)号：US20160064425A1

公开(公告)日：2016-03-03

申请号：US14721505

申请日：2015-05-26

Applicant: Samsung Display Co., Ltd.

Inventor： Myounghwa KIM ,  Jaewook Kang ,  Joohee Jeon ,  Jongchan Lee ,  Yoonho Khang

IPC: H01L27/12 ,  H01L29/49 ,  G02F1/1362 ,  H01L29/786 ,  H01L27/32 ,  G02F1/1368 ,  H01L29/423 ,  H01L29/45

CPC classification number: H01L27/1255 ,  G02F1/136213 ,  G02F1/1368 ,  H01L27/1222 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/42372 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/78666 ,  H01L29/78675 ,  H01L2227/323

Abstract: Provided is a thin film transistor array substrate having at least one thin film transistor. The thin film transistor includes a semiconductor layer having a channel area with a first doping concentration on a substrate, a source-drain area disposed at opposite sides of the channel area and with a second doping concentration greater than the first doping concentration, and a substantially undoped area extending from the source-drain area. The substrate has a gate insulating layer on the semiconductor layer and a gate electrode disposed on the gate insulating layer and overlapping the channel area in at least some portions. The substrate has a source electrode and a drain electrode, each insulated from the gate electrode and electrically connected to the source-drain area. The gate electrode includes a first gate electrode layer and a second gate electrode layer, wherein the second gate electrode layer is thicker than the first gate electrode layer.

Abstract translation: 提供了具有至少一个薄膜晶体管的薄膜晶体管阵列基板。 薄膜晶体管包括半导体层，其具有在衬底上具有第一掺杂浓度的沟道区，设置在沟道区的相对侧并具有大于第一掺杂浓度的第二掺杂浓度的源极 - 漏极区，以及基本上 从源极 - 漏极区域延伸的未掺杂区域。 衬底在半导体层上具有栅极绝缘层，栅极电极设置在栅极绝缘层上并且至少部分地与沟道区域重叠。 基板具有源电极和漏电极，各自与栅电极绝缘并且电连接到源漏区。 栅电极包括第一栅电极层和第二栅极电极层，其中第二栅电极层比第一栅电极层厚。

公开(公告)号：US20240155878A1

公开(公告)日：2024-05-09

申请号：US18412760

申请日：2024-01-15

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoungseok SON ,  Myounghwa KIM ,  Eoksu KIM ,  Taesang KIM ,  Masataka KANO

IPC: H10K59/122 ,  H01L27/12 ,  H10K50/11 ,  H10K50/844 ,  H10K59/121 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131 ,  H10K71/00 ,  H10K77/10

CPC classification number: H10K59/122 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288 ,  H10K50/11 ,  H10K50/844 ,  H10K59/1213 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131 ,  H10K71/00 ,  H10K77/111 ,  H10K59/1201

Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.

公开(公告)号：US20220278135A1

公开(公告)日：2022-09-01

申请号：US17745427

申请日：2022-05-16

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoung Seok SON ,  Myounghwa KIM ,  Jaybum KIM ,  Yeon Keon MOON ,  Masataka KANO

IPC: H01L27/12 ,  H01L27/32

Abstract: A display apparatus includes a base substrate, a polysilicon active pattern disposed on the base substrate, including polycrystalline silicon, including a source region and a drain region each doped with impurities and a channel region between the source region and the drain region, and including indium, a first gate electrode overlapping the channel region, and a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region.

公开(公告)号：US20210391406A1

公开(公告)日：2021-12-16

申请号：US17152249

申请日：2021-01-19

Applicant: Samsung Display Co., Ltd.

Inventor： Hyelim CHOI ,  Joonseok PARK ,  Myounghwa KIM ,  Taesang KIM ,  Yeonkeon MOON ,  Geunchul PARK ,  Sangwoo SOHN ,  Junhyung LIM

IPC: H01L27/32

Abstract: A display device includes: a substrate including a first region and a second region; a first active layer located on the first region and including a first channel region, a first source region at one side of the first channel region, a first drain region at the other side of the first channel region, and a first extension region extending in a direction from the first source region to the second region; a first gate electrode located above the first active layer and overlapping the first channel region; a driving voltage line located on the first active layer, overlapping the first source region, and extending along the first extension region; a first connection electrode located on the first drain region; and a pixel electrode located above the first gate electrode and connected to the first connection electrode.

公开(公告)号：US20210118966A1

公开(公告)日：2021-04-22

申请号：US17116943

申请日：2020-12-09

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoungseok SON ,  Myounghwa KIM ,  Eoksu KIM ,  Taesang KIM ,  Masataka KANO

IPC: H01L27/32 ,  H01L27/12 ,  H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56

Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.

公开(公告)号：US20190074377A1

公开(公告)日：2019-03-07

申请号：US16108454

申请日：2018-08-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joonseok PARK ,  Jihun LIM ,  Myounghwa KIM ,  Taesang KIM ,  Yeonkeon MOON

IPC: H01L29/786 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L23/532 ,  H01L27/32

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

公开(公告)号：US20170084755A1

公开(公告)日：2017-03-23

申请号：US15367568

申请日：2016-12-02

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongchan LEE ,  Yoonho KHANG ,  Myounghwa KIM ,  Joonhwa BAE ,  Myounggeun CHA

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/3205 ,  H01L29/45 ,  H01L27/12

CPC classification number: H01L21/823418 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/28518 ,  H01L21/32053 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

Abstract: A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.

公开(公告)号：US20160093646A1

公开(公告)日：2016-03-31

申请号：US14689927

申请日：2015-04-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myounggeun CHA ,  Dongjo KIM ,  Yoonho KHANG ,  Myounghwa KIM ,  Kyoungwon LEE

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1255 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78675 ,  H01L29/78678

Abstract: A thin film transistor (TFT) substrate, a flat display apparatus including the TFT substrate, a method of manufacturing the TFT substrate, and a method of manufacturing the flat display apparatus, the thin film transistor (TFT) substrate including a substrate; a first gate electrode on the substrate, the first gate electrode including a first branch electrode and a second branch electrode that are spaced apart from one another; a polysilicon layer on the first gate electrode and insulated from the first gate electrode; and a second gate electrode on the polysilicon layer, the second gate electrode being insulated from the polysilicon layer and overlying the first and second branch electrodes.

Abstract translation: 薄膜晶体管（TFT）基板，包括TFT基板的平面显示装置，TFT基板的制造方法以及制造平面显示装置的方法，所述薄膜晶体管（TFT）基板包括基板; 在所述基板上的第一栅电极，所述第一栅极包括彼此间隔开的第一分支电极和第二分支电极; 在所述第一栅电极上并与所述第一栅电极绝缘的多晶硅层; 以及在所述多晶硅层上的第二栅电极，所述第二栅电极与所述多晶硅层绝缘并且覆盖所述第一和第二分支电极。