公开(公告)号：US20150108443A1

公开(公告)日：2015-04-23

申请号：US14331846

申请日：2014-07-15

Applicant: Samsung Display Co., Ltd.

Inventor： Myung-Soo HUH ,  Jae-Hyun KIM ,  Jin-Kwang KIM ,  Cheol-Lae ROH ,  Suk-Won JUNG ,  Cheol-Min JANG

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/5256 ,  H01L51/5253

Abstract: An organic light-emitting apparatus including: a substrate; an organic light-emitting device disposed on the substrate and including a first electrode, a second electrode, and an intermediate layer disposed between the first electrode and the second electrode; and an encapsulation layer provided to cover the organic light-emitting device. The encapsulation layer includes a first inorganic layer including a first fracture point, and a first fracture control layer provided on the first inorganic layer to seal the first fracture point.

Abstract translation: 一种有机发光装置，包括：基板; 设置在所述基板上并且包括设置在所述第一电极和所述第二电极之间的第一电极，第二电极和中间层的有机发光器件; 以及设置成覆盖有机发光器件的封装层。 封装层包括包含第一断裂点的第一无机层和设置在第一无机层上以密封第一断裂点的第一断裂控制层。

公开(公告)号：US20150047969A1

公开(公告)日：2015-02-19

申请号：US14296826

申请日：2014-06-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong-Suk LEE ,  Min-Sung SEO ,  Myung-Soo HUH ,  Mi-Ra AN

IPC: H01L51/56

CPC classification number: C23C14/568 ,  C23C16/54 ,  H01L21/67184 ,  H01L21/67207 ,  H01L51/5256

Abstract: A thin film encapsulation layer manufacturing apparatus is provided that may include a transfer chamber, a sputtering chamber, a monomer deposition chamber, a chemical vapor deposition (CVD) chamber, and an atomic layer deposition (ALD) chamber. The transfer chamber may be connected to each of the other chambers, and may be configured to align a substrate. Each of the other chambers may be configured to receive from and transfer to the transfer chamber a substrate. The sputtering chamber may be configured to form a first inorganic layer on the substrate by a sputtering process. The monomer deposition chamber may be configured to deposit a first organic layer on the first inorganic layer. The CVD chamber may be configured to form a second inorganic layer on the first organic layer. The ALD chamber may be configured to form a third inorganic layer on the second inorganic layer.

Abstract translation: 提供一种薄膜封装层制造装置，其可以包括转移室，溅射室，单体沉积室，化学气相沉积（CVD）室和原子层沉积（ALD）室。 传送室可以连接到每个其它室，并且可以被配置为对准衬底。 每个其它室可以被配置为从转移室接收和转移到基板。 溅射室可以被配置为通过溅射工艺在衬底上形成第一无机层。 单体沉积室可以被配置为在第一无机层上沉积第一有机层。 CVD室可以被配置为在第一有机层上形成第二无机层。 ALD室可以被配置成在第二无机层上形成第三无机层。

公开(公告)号：US20140162385A1

公开(公告)日：2014-06-12

申请号：US14020849

申请日：2013-09-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myung-Soo HUH ,  Suk-Won JUNG ,  Jeong-Ho YI ,  Sang-Hyuk HONG ,  Yong-Suk LEE

IPC: H01L27/32

CPC classification number: C23C16/042 ,  C23C16/4405 ,  C23C16/4585 ,  C23C16/50 ,  C23C16/52 ,  H01L21/681 ,  H01L21/682 ,  H01L21/68735 ,  H01L21/68742 ,  H01L27/3244 ,  H01L51/0012 ,  H01L51/56

Abstract: A deposition apparatus for performing a deposition process by using a mask with respect to a substrate, the deposition apparatus includes a chamber, a support unit in the chamber, the support unit including first holes and being configured to support the substrate, a supply unit configured to supply at least one deposition raw material toward the substrate, and movable alignment units through the first holes of the support unit, the alignment units being configured to support the mask and to align the mask with respect to the substrate.

Abstract translation: 一种用于通过使用相对于基板的掩模进行沉积处理的沉积装置，所述沉积装置包括室，所述室中的支撑单元，所述支撑单元包括第一孔并被构造成支撑所述基板，所述供给单元构造成 向衬底提供至少一个沉积原材料，以及通过支撑单元的第一孔的可移动对准单元，对准单元构造成支撑掩模并使掩模相对于衬底对准。

公开(公告)号：US20140041590A1

公开(公告)日：2014-02-13

申请号：US13710310

申请日：2012-12-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Choel-Min JANG ,  Myung-Soo HUH ,  Suk-Won JUNG ,  Sung-Yong LEE ,  Cheol-Rae Jo ,  In-Kyo KIM ,  Sung-Hun KEY

IPC: C23C16/00

CPC classification number: C23C16/00 ,  B01F3/04 ,  C23C16/4481 ,  C23C16/4482

Abstract: A canister includes an accommodation portion for accommodating a liquid material; an outlet pipe that is connected to the accommodation portion so as to discharge a gas material obtained by vaporizing the liquid material; a blocking cover that is connected to an upper surface of the accommodation portion; and a plurality of baffle plates that are disposed in the accommodation portion and are spaced apart from each other. The canister further includes a restrictor including a main body member that is disposed between the plurality of baffle plates and the blocking cover and is connected to an internal surface of the accommodation portion, an extension member extending from the main body member, and a through portion that is formed through the main body member and the extension member. A deposition procedure using the canister is efficiently performed and characteristics of a deposition layer are easily improved.

Abstract translation: 罐包括用于容纳液体材料的容纳部分; 出口管，其连接到容纳部分，以排出通过汽化液体材料获得的气体材料; 阻挡盖，其连接到所述容纳部的上表面; 以及设置在容纳部分中并彼此间隔开的多个挡板。 所述罐还包括限制器，所述限制器包括主体部件，所述主体部件设置在所述多个挡板和所述阻挡盖之间，并且连接到所述容纳部的内表面，从所述主体部件延伸的延伸部件， 其通过主体构件和延伸构件形成。 可以有效地进行使用罐的沉积工序，容易地提高沉积层的特性。

公开(公告)号：US20170117473A1

公开(公告)日：2017-04-27

申请号：US15398821

申请日：2017-01-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jae-Hyun KIM ,  Myung-Soo HUH

IPC: H01L51/00 ,  C23C16/513 ,  H01L51/56

CPC classification number: H01L51/0008 ,  C23C16/403 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/513 ,  H01L51/56

Abstract: A vapor deposition apparatus for forming a deposition layer on a substrate includes a supply unit that is supplied with a first raw gas to form the deposition layer and an auxiliary gas, wherein the auxiliary gas does not constitute a raw material to form the deposition layer, a reaction space that is connected to the supply unit to be supplied with the first raw gas and the auxiliary gas, a plasma generator in the reaction space to convert at least a portion of the first raw gas into a radical form, and a first injection portion that is connected to the reaction space and that supplies at least a radical material of the first raw gas toward the substrate.

公开(公告)号：US20160322574A1

公开(公告)日：2016-11-03

申请号：US15205815

申请日：2016-07-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jin-Kwang KIM ,  Seung-Yong SONG ,  Myung-Soo HUH ,  Suk-Won JUNG ,  Choel-Min JANG ,  Jae-Hyun KIM ,  Sung-Chul KIM

IPC: H01L51/00 ,  C23C16/50 ,  C23C16/455 ,  C23C16/44 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L51/0021 ,  C23C14/24 ,  C23C14/564 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/50 ,  H01B13/30 ,  H01L27/3244 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323

Abstract: A vapor deposition apparatus in which a deposition process is performed by moving a substrate, the vapor deposition apparatus including a supply unit that injects at least one raw material gas towards the substrate, and a blocking gas flow generation unit that is disposed corresponding to the supply unit and generates a gas-flow that blocks a flow of the raw material gas.

Abstract translation: 一种气相沉积装置，其中通过移动基板进行沉积工艺，所述气相沉积设备包括向基板注入至少一种原料气体的供应单元和对应于供应设置的阻塞气体流产生单元 并且产生阻挡原料气体流动的气流。

公开(公告)号：US20160164034A1

公开(公告)日：2016-06-09

申请号：US15046024

申请日：2016-02-17

Applicant: Samsung Display Co., Ltd.

Inventor： Myung-Soo HUH ,  Jae-Hyun KIM ,  Jin-Kwang KIM ,  Cheol-Lae ROH ,  Suk-Won JUNG ,  Cheol-Min JANG

IPC: H01L51/52

CPC classification number: H01L51/5256 ,  H01L51/5253

Abstract: An organic light-emitting apparatus including: a substrate; an organic light-emitting device disposed on the substrate and including a first electrode, a second electrode, and an intermediate layer disposed between the first electrode and the second electrode; and an encapsulation layer provided to cover the organic light-emitting device. The encapsulation layer includes a first inorganic layer including a first fracture point, and a first fracture control layer provided on the first inorganic layer to seal the first fracture point.

公开(公告)号：US20150050421A1

公开(公告)日：2015-02-19

申请号：US14296029

申请日：2014-06-04

Applicant: Samsung Display Co., Ltd.

Inventor： Choel-Min JANG ,  Sung-Hun KEY ,  In-Kyo KIM ,  Suk-Won JUNG ,  Myung-Soo HUH

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45574 ,  C23C16/45551 ,  C23C16/458

Abstract: A method of depositing a layer includes spraying a source gas and a reactant gas onto a substrate disposed on a susceptor unit using at least one source gas spray nozzle and at least one reactant gas nozzle to form a first source gas region and a first reactant gas region on the substrate, respectively, moving the susceptor unit by a distance corresponding to a width of the source gas spray nozzle or a width of the reactant gas spray nozzle in a first direction, and spraying the source gas and the reactant gas onto the first reactant gas region and the first source gas region using the source gas spray nozzle and the reactant gas nozzle, respectively, to form a first monolayer.

Abstract translation: 沉积层的方法包括使用至少一个源气体喷嘴和至少一个反应气体喷嘴将源气体和反应气体喷射到设置在基座单元上的基板上，以形成第一源气体区域和第一反应气体 区域，分别使基座单元沿着第一方向移动对应于源气体喷嘴的宽度的距离或反应气体喷嘴的宽度，并将源气体和反应气体喷射到第一方向上 反应气体区域和第一源气体区域分别使用源气体喷嘴和反应气体喷嘴形成第一单层。