公开(公告)号：US09553203B2

公开(公告)日：2017-01-24

申请号：US14506061

申请日：2014-10-03

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Hwan Cho ,  Yoonho Khang ,  Hyunjae Na ,  Youngki Shin ,  Donghwan Shim

IPC: H01L29/45 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/45 ,  H01L29/66969

Abstract: A display panel includes a base substrate including a pixel area and a peripheral area, a semiconductor layer disposed on a portion of the base substrate, a display element disposed in the pixel area, and a thin film transistor which controls the display element and includes an input electrode, an output electrode and a control electrode, in which the semiconductor layer includes a first portion disposed on the input electrode of the first thin film transistor, a second portion disposed on the output electrode of the first thin film transistor, and a third portion which connects the first portion and the second portion, overlaps the control electrode of the first thin film transistor, and defines a channel of the first thin film transistor.

Abstract translation: 显示面板包括：基板，包括像素区域和外围区域;设置在基板的一部分上的半导体层;设置在像素区域中的显示元件;以及控制显示元件的薄膜晶体管， 输入电极，输出电极和控制电极，其中半导体层包括设置在第一薄膜晶体管的输入电极上的第一部分，设置在第一薄膜晶体管的输出电极上的第二部分，以及第三部分 连接第一部分和第二部分的部分与第一薄膜晶体管的控制电极重叠，并限定第一薄膜晶体管的沟道。

公开(公告)号：US09263470B1

公开(公告)日：2016-02-16

申请号：US14585525

申请日：2014-12-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dongjo Kim ,  Myounggeun Cha ,  Yoonho Khang ,  Soyoung Koo

IPC: H01L21/00 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L27/32

CPC classification number: H01L27/1218 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02686 ,  H01L27/1222 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78654 ,  H01L29/78675

Abstract: Provided is a semiconductor device including a buffer layer that is on a substrate and includes an inclined surface; a crystalline silicon layer that is on the buffer layer; a gate electrode that is on the crystalline silicon layer while being insulated from the crystalline silicon layer; and a source electrode and a drain electrode that are each electrically connected to the crystalline silicon layer, the angle between the substrate and the inclined surface being in a range of about 17.5 degrees to less than about 70 degrees.

Abstract translation: 本发明提供一种半导体器件，其包括在衬底上并包括倾斜表面的缓冲层; 位于缓冲层上的晶体硅层; 位于结晶硅层上同时与晶体硅层绝缘的栅电极; 以及源极电极和漏极电极，其电连接到晶体硅层，基板和倾斜表面之间的角度在约17.5度至小于约70度的范围内。

公开(公告)号：US09035296B2

公开(公告)日：2015-05-19

申请号：US13893817

申请日：2013-05-14

Applicant: Samsung Display Co., Ltd.

Inventor： Seohong Jung ,  Sun Hee Lee ,  Seung-Hwan Cho ,  Myounggeun Cha ,  Yoonho Khang ,  Youngki Shin

IPC: H01L29/786

CPC classification number: H01L29/78621 ,  H01L29/7869

Abstract: A thin film transistor includes a semiconductor layer disposed on a base substrate and including an oxide semiconductor material, a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer, a plurality of low carrier concentration areas respectively disposed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer, a gate insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating layer.

Abstract translation: 薄膜晶体管包括设置在基底基板上的半导体层，其包括分别从半导体层的相对端延伸的氧化物半导体材料，源电极和漏电极，分别设置在半导体层之间的多个低载流子浓度区域 源电极和半导体层之间以及在漏极和半导体层之间，设置在半导体层上的栅极绝缘层和设置在栅极绝缘层上的栅电极。

公开(公告)号：US09647089B2

公开(公告)日：2017-05-09

申请号：US14696257

申请日：2015-04-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Woonghee Jeong ,  Joonhwa Bae ,  Youngki Shin ,  Yoonho Khang

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L21/02

CPC classification number: H01L29/66757 ,  H01L21/02532 ,  H01L21/02675 ,  H01L27/1281 ,  H01L29/78675

Abstract: Thin film transistor substrate includes: a substrate; a crystalline silicon layer on the substrate; and a capping layer covering the crystalline silicon layer and including a first portion having a first thickness and a second portion having a second thickness that is greater than the first thickness.

公开(公告)号：US09488889B2

公开(公告)日：2016-11-08

申请号：US13940588

申请日：2013-07-12

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dongjo Kim ,  Yoonho Khang ,  Sehwan Yu ,  Jungkyu Lee ,  Jong chan Lee ,  Jiseon Lee ,  Sanggab Kim ,  Shin Il Choi

IPC: G02F1/136 ,  G02F1/1362

CPC classification number: G02F1/136227 ,  G02F2001/13629 ,  G02F2201/123

Abstract: A liquid crystal display includes a first substrate including a plurality of pixels, a second substrate facing the first substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. At least one of the pixels includes a thin film transistor disposed on a first insulating substrate, an insulating layer overlapping the thin film transistor, and a pixel electrode disposed on the insulating layer. A contact hole is formed through the insulating layer to expose a first electrode of the thin film transistor, the pixel electrode is electrically connected to the first electrode through the contact hole, and the pixel electrode has a single-layer in an area where the contact hole is formed and a double-layer on the insulating layer.

Abstract translation: 液晶显示器包括：包括多个像素的第一基板;面对第一基板的第二基板;以及介于第一基板和第二基板之间的液晶层。 至少一个像素包括设置在第一绝缘基板上的薄膜晶体管，与薄膜晶体管重叠的绝缘层和设置在绝缘层上的像素电极。 通过绝缘层形成接触孔，露出薄膜晶体管的第一电极，像素电极通过接触孔与第一电极电连接，像素电极在接触区域中具有单层 在绝缘层上形成双层。

公开(公告)号：US20160104726A1

公开(公告)日：2016-04-14

申请号：US14696257

申请日：2015-04-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Woonghee Jeong ,  Joonhwa Bae ,  Youngki Shin ,  Yoonho Khang

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66757 ,  H01L21/02532 ,  H01L21/02675 ,  H01L27/1281 ,  H01L29/78675

Abstract: Thin film transistor substrate includes: a substrate; a crystalline silicon layer on the substrate; and a capping layer covering the crystalline silicon layer and including a first portion having a first thickness and a second portion having a second thickness that is greater than the first thickness.

Abstract translation: 薄膜晶体管基板包括：基板; 基底上的晶体硅层; 以及覆盖所述晶体硅层并且包括具有第一厚度的第一部分和具有大于所述第一厚度的第二厚度的第二部分的覆盖层。

公开(公告)号：US20160064425A1

公开(公告)日：2016-03-03

申请号：US14721505

申请日：2015-05-26

Applicant: Samsung Display Co., Ltd.

Inventor： Myounghwa KIM ,  Jaewook Kang ,  Joohee Jeon ,  Jongchan Lee ,  Yoonho Khang

IPC: H01L27/12 ,  H01L29/49 ,  G02F1/1362 ,  H01L29/786 ,  H01L27/32 ,  G02F1/1368 ,  H01L29/423 ,  H01L29/45

CPC classification number: H01L27/1255 ,  G02F1/136213 ,  G02F1/1368 ,  H01L27/1222 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/42372 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/78666 ,  H01L29/78675 ,  H01L2227/323

Abstract: Provided is a thin film transistor array substrate having at least one thin film transistor. The thin film transistor includes a semiconductor layer having a channel area with a first doping concentration on a substrate, a source-drain area disposed at opposite sides of the channel area and with a second doping concentration greater than the first doping concentration, and a substantially undoped area extending from the source-drain area. The substrate has a gate insulating layer on the semiconductor layer and a gate electrode disposed on the gate insulating layer and overlapping the channel area in at least some portions. The substrate has a source electrode and a drain electrode, each insulated from the gate electrode and electrically connected to the source-drain area. The gate electrode includes a first gate electrode layer and a second gate electrode layer, wherein the second gate electrode layer is thicker than the first gate electrode layer.

Abstract translation: 提供了具有至少一个薄膜晶体管的薄膜晶体管阵列基板。 薄膜晶体管包括半导体层，其具有在衬底上具有第一掺杂浓度的沟道区，设置在沟道区的相对侧并具有大于第一掺杂浓度的第二掺杂浓度的源极 - 漏极区，以及基本上 从源极 - 漏极区域延伸的未掺杂区域。 衬底在半导体层上具有栅极绝缘层，栅极电极设置在栅极绝缘层上并且至少部分地与沟道区域重叠。 基板具有源电极和漏电极，各自与栅电极绝缘并且电连接到源漏区。 栅电极包括第一栅电极层和第二栅极电极层，其中第二栅电极层比第一栅电极层厚。

公开(公告)号：US20140191228A1

公开(公告)日：2014-07-10

申请号：US13893817

申请日：2013-05-14

Applicant: Samsung Display Co., Ltd.

Inventor： SEOHONG JUNG ,  Sun Hee Lee ,  Seung-Hwan Cho ,  Myounggeun Cha ,  Yoonho Khang ,  Youngki Shin

IPC: H01L29/786

CPC classification number: H01L29/78621 ,  H01L29/7869

Abstract: A thin film transistor includes a semiconductor layer disposed on a base substrate and including an oxide semiconductor material, a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer, a plurality of low carrier concentration areas respectively disposed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer, a gate insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating layer.

Abstract translation: 薄膜晶体管包括设置在基底基板上的半导体层，其包括分别从半导体层的相对端延伸的氧化物半导体材料，源电极和漏电极，分别设置在半导体层之间的多个低载流子浓度区域 源电极和半导体层之间以及在漏极和半导体层之间，设置在半导体层上的栅极绝缘层和设置在栅极绝缘层上的栅电极。