Abstract:
Disclosed herein is a lamination layer type semiconductor package, and more particularly, a lamination layer type semiconductor package capable of maintaining a thickness of a package on package structure at a minimum and minimizing a warpage defect by mounting two chips so as to correspond to each other. The lamination layer type semiconductor package includes: an upper package having an upper flip chip mounted on an upper substrate; a lower package having a lower flip chip mounted on a lower substrate and disposed so as to closely adhere the upper flip chip and the lower flip chip to each other; a heat dissipation adhesive member adhesively fixing the upper flip chip and the lower flip chip and dissipating heat generated from the upper flip chip and the lower flip chip; and a molding member molding between the upper substrate and the lower substrate.
Abstract:
There is provided an In nanowire including a substrate, an indium thin film formed on the substrate, an insulating film formed on the indium thin film and having at least one through hole through formation of a pattern, and an In nanowire vertically protruded from the indium thin film through the at least one through hole.
Abstract:
There is provided a dry film resist sheet, including: a base film; a first dry film resist layer formed on the base film, the first dry film resist layer containing a binder polymer, a multi-functional monomer, and a photoinitiator; and a second dry film resist layer formed on the first dry film resist layer, the second dry film resist layer containing a binder polymer, a multi-functional monomer, a photoinitiator, and a thermal initiator.
Abstract:
Disclosed herein are a system of measuring a warpage and a method of measuring a warpage. The system of measuring a warpage of a sample by analyzing an image photographed by the camera using light that is diffused from a light source and reflected on a surface of a sample and is arrived at the camera through a reference grating part, the system includes: an intake part that removes a fume generated from the sample. By this configuration, it is possible to measure the warpage while effectively removing the fume generated from the sample according to the increase in the temperature of the sample at the time of measuring the warpage, thereby improving the accuracy of the warpage measurement.