CHEMICAL MECHANICAL POLISHING APPARATUS AND CHEMICAL MECHANICAL POLISHING METHOD

    公开(公告)号:US20240278383A1

    公开(公告)日:2024-08-22

    申请号:US18418868

    申请日:2024-01-22

    摘要: The inventive concept provides a chemical mechanical polishing apparatus including a polishing pad providing a flat main surface to which a slurry liquid having polishing particles is supplied and a conditioning disk on the main surface of the polishing pad. The conditioning disk can include a plurality of diamond particles that are positioned on a surface of the conditioning disk facing the main surface of the polishing pad, and wherein the plurality of diamond particles are terminated with specific elements on surfaces thereof, and a polarity of a zeta potential on the surface of the diamond particles is the same as that of a zeta potential on the polishing particles of the slurry liquid.

    Rotary body module and chemical mechanical polishing apparatus having the same

    公开(公告)号:US11590628B2

    公开(公告)日:2023-02-28

    申请号:US16747034

    申请日:2020-01-20

    摘要: A chemical mechanical polishing apparatus includes a fixing portion; and a rotary body module including a rotating shaft rotatably installed on the fixing portion, a first rotating unit connected to the rotating shaft and on which a wafer is mounted, and a second rotating unit disposed around the first rotating unit and on which a retainer ring is mounted, wherein the fixing portion comprises a first driving member disposed above the first rotating unit and a second driving member disposed above the second rotating unit, wherein the first and second driving members are comprised of a magnet or an electromagnet, wherein a first magnet, disposed opposite to the first driving member, is provided in the first rotating unit, and a second magnet, disposed opposite to the second driving member, is provided in the second rotating unit, and wherein the first rotating unit and the second rotating unit are independently tilted.

    Semiconductor device and method of fabricating the same

    公开(公告)号:US10777560B2

    公开(公告)日:2020-09-15

    申请号:US16833914

    申请日:2020-03-30

    IPC分类号: H01L27/108 H01L21/66

    摘要: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a semiconductor substrate including a first region and a second region, a dummy separation pattern provided on the second region of the semiconductor substrate to have a recessed region at its upper portion, a first electrode provided on the first region of the semiconductor substrate, a dielectric layer covering the first electrode, a second electrode provided on the dielectric layer, and a remaining electrode pattern provided in the recessed region. The second electrode and the remaining electrode pattern may be formed of a same material.

    Semiconductor device and method of fabricating the same

    公开(公告)号:US10748906B2

    公开(公告)日:2020-08-18

    申请号:US16110658

    申请日:2018-08-23

    IPC分类号: H01L27/108 H01L21/66

    摘要: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a semiconductor substrate including a first region and a second region, a dummy separation pattern provided on the second region of the semiconductor substrate to have a recessed region at its upper portion, a first electrode provided on the first region of the semiconductor substrate, a dielectric layer covering the first electrode, a second electrode provided on the dielectric layer, and a remaining electrode pattern provided in the recessed region. The second electrode and the remaining electrode pattern may be formed of a same material.