公开(公告)号：US10553790B1

公开(公告)日：2020-02-04

申请号：US16440461

申请日：2019-06-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonmyoung Lee ,  Ung Hwan Pi ,  Eunsun Noh ,  Yong Sung Park

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  H01L27/22

Abstract: A magnetic memory device includes a first magnetic tunnel junction pattern on a substrate, a second magnetic tunnel junction pattern on the first magnetic tunnel junction pattern, and a conductive line between the first magnetic tunnel junction pattern and the second magnetic tunnel junction pattern. The conductive line is configured such that a current flowing through the conductive line flows in parallel to an interface between the conductive line and each of the first and second magnetic tunnel junction patterns.

公开(公告)号：US10347819B2

公开(公告)日：2019-07-09

申请号：US15340330

申请日：2016-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongchul Park ,  Byoungjae Bae ,  Inho Kim ,  Shin Kwon ,  Eunsun Noh ,  Insun Park ,  Sangmin Lee

IPC: H01L27/22 ,  H01L43/08 ,  H01L21/033 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: Methods of manufacturing a semiconductor device include forming a conductive layer on a substrate, forming an air gap or other cavity between the conductive layer and the substrate, and patterning the conductive layer to expose the air gap. The methods may further include forming conductive pillars between the substrate and the conductive layer. The air gap may be positioned between the conductive pillars.

公开(公告)号：US20230187287A1

公开(公告)日：2023-06-15

申请号：US18165447

申请日：2023-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunsun Noh

IPC: H01L21/66 ,  H01F41/34 ,  H01L21/683 ,  G01R33/032 ,  H01F10/32 ,  G01R33/12 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80

CPC classification number: H01L22/14 ,  H01F41/34 ,  H01L21/6838 ,  G01R33/0325 ,  H01F10/3254 ,  H01F10/3286 ,  G01R33/1207 ,  H10B61/22 ,  H10N50/01 ,  H10N50/80

Abstract: A magnetic property measuring system includes a stage configured to hold a sample and a magnetic structure disposed over the stage. The stage includes a body part, a magnetic part adjacent the body part, and a plurality of holes defined in the body part. The magnetic part of the stage and the magnetic structure are configured to apply a magnetic field, which is perpendicular to one surface of the sample, to the sample. The stage is configured to move horizontally in an x-direction and a y-direction which are parallel to the one surface of the sample.

公开(公告)号：US11600537B2

公开(公告)日：2023-03-07

申请号：US17116462

申请日：2020-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunsun Noh

IPC: H01L43/12 ,  H01L21/66 ,  H01F41/34 ,  H01L21/683 ,  G01R33/032 ,  H01F10/32 ,  H01L27/22 ,  G01R33/12 ,  H01L43/02

Abstract: A magnetic property measuring system includes a stage configured to hold a sample and a magnetic structure disposed over the stage. The stage includes a body part, a magnetic part adjacent the body part, and a plurality of holes defined in the body part. The magnetic part of the stage and the magnetic structure are configured to apply a magnetic field, which is perpendicular to one surface of the sample, to the sample. The stage is configured to move horizontally in an x-direction and a y-direction which are parallel to the one surface of the sample.

公开(公告)号：US11535930B2

公开(公告)日：2022-12-27

申请号：US16856539

申请日：2020-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonmyoung Lee ,  Whankyun Kim ,  Eunsun Noh ,  Jeong-Heon Park ,  Junho Jeong

IPC: C23C14/54 ,  H01L27/22 ,  C23C14/00 ,  G11B5/851 ,  H01L43/12

Abstract: A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.

公开(公告)号：US11237224B2

公开(公告)日：2022-02-01

申请号：US16592086

申请日：2019-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunsun Noh

IPC: H01L27/22 ,  G01R33/032 ,  H01L43/02 ,  H01L43/12 ,  H01L21/66 ,  G01R15/24 ,  G01R33/12

Abstract: A magnetic property measuring system may include a stage configured to load a sample and to rotate the sample about a rotation axis such that the stage rotates the sample by a rotation angle, the rotation axis extending normal to a top surface of the sample. The magnetic property measuring system may further include a polarizer having a first polarization axis, and an analyzer having a second polarization axis. The polarizer and the analyzer may enable the first and second polarization axes to be independently rotated based on the rotation angle of the sample.

公开(公告)号：US11037611B2

公开(公告)日：2021-06-15

申请号：US15933659

申请日：2018-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunsun Noh ,  Juhyun Kim ,  Ung Hwan Pl

IPC: G11C11/16 ,  G01R33/09 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic property measuring system includes coil structures configured to apply a magnetic field to a sample, a light source configured to irradiate incident light to the sample, and a detector configured to detect polarization of light reflected from the sample. The magnetic field is perpendicular to a surface of the sample. Each coil structure includes a pole piece and a coil surrounding an outer circumferential surface of the pole piece. A wavelength of the incident light is equal to or less than about 580 nm.

公开(公告)号：US10862025B2

公开(公告)日：2020-12-08

申请号：US16434478

申请日：2019-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonmyoung Lee ,  Ung Hwan Pi ,  Eunsun Noh ,  Yong Sung Park

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  H01L43/08

Abstract: A magnetic memory device includes a first magnetic tunnel junction pattern on a substrate, a second magnetic tunnel junction pattern on the first magnetic tunnel junction pattern, and a conductive line between the first magnetic tunnel junction pattern and the second magnetic tunnel junction pattern. The conductive line is configured such that a current flowing through the conductive line flows in parallel to an interface between the conductive line and each of the first and second magnetic tunnel junction patterns.

公开(公告)号：US20200168664A1

公开(公告)日：2020-05-28

申请号：US16442991

申请日：2019-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunsun Noh ,  Juhyun KIM ,  Whankyun KIM

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02

Abstract: Provided are magnetic memory devices and method of fabricating the same. The magnetic memory device includes a magnetic tunnel junction pattern disposed on a substrate and including a free layer, a tunnel barrier layer and a pinned layer which are sequentially stacked, and a first spin-orbit torque (SOT) line being in contact with a first sidewall of the free layer of the magnetic tunnel junction pattern.