公开(公告)号：US20150194233A1

公开(公告)日：2015-07-09

申请号：US14588734

申请日：2015-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-jun JEONG ,  Seong-jun PARK ,  Hyeon-jin SHIN ,  Yea-hyun GU ,  Hyoung-sub KIM ,  Jae-hyun YANG

IPC: H01B1/04 ,  H01B13/06 ,  C23C16/02 ,  C23C16/455 ,  H01L29/16 ,  C23C16/06

CPC classification number: H01B1/04 ,  C23C16/0281 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45553 ,  H01L29/1606 ,  H01L29/513 ,  H01L29/7781 ,  Y10T428/265 ,  Y10T428/30

Abstract: Example embodiments relate to a stacking structure having a material layer formed on a graphene layer, and a method of forming the material layer on the graphene layer. In the stacking structure, when the material layer is formed on the graphene layer by using an ALD method, an intermediate layer as a seed layer may be formed on the graphene layer by using a linear type precursor.

Abstract translation: 示例性实施例涉及具有在石墨烯层上形成的材料层的堆叠结构，以及在石墨烯层上形成材料层的方法。 在堆叠结构中，当通过使用ALD方法在石墨烯层上形成材料层时，可以通过使用线型前体在石墨烯层上形成作为种子层的中间层。

公开(公告)号：US20150155287A1

公开(公告)日：2015-06-04

申请号：US14265965

申请日：2014-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong HEO ,  Seong-jun PARK ,  Hyeon-jin SHIN ,  Jae-ho LEE

IPC: H01L27/115 ,  H01L29/43 ,  H01L29/51 ,  H01L29/16

CPC classification number: H01L29/1606 ,  G11C13/0014 ,  G11C13/025 ,  G11C2213/35 ,  H01L27/10808 ,  H01L27/10873 ,  H01L29/66015 ,  H01L29/7606 ,  H01L45/149

Abstract: Disclosed are memory devices including a two-dimensional (2D) material, methods of manufacturing the same, and methods of operating the same. A memory device may include a transistor, which includes graphene and 2D semiconductor contacting the graphene, and a capacitor connected to the transistor. The memory device may include a first electrode, a first insulation layer, a second electrode, a semiconductor layer, a third electrode, a second insulation layer, and a fourth electrode which are sequentially arranged. The second electrode may include the graphene, and the semiconductor layer may include the 2D semiconductor. Alternatively, the memory device may include first and second electrode elements, a graphene layer between the first and second electrode elements, a 2D semiconductor layer between the graphene layer and the first electrode element, and a dielectric layer between the graphene layer and the second electrode.

Abstract translation: 公开了包括二维（2D）材料，其制造方法及其操作方法的存储器件。 存储器件可以包括晶体管，其包括与石墨烯接触的石墨烯和2D半导体以及连接到晶体管的电容器。 存储器件可以包括依次布置的第一电极，第一绝缘层，第二电极，半导体层，第三电极，第二绝缘层和第四电极。 第二电极可以包括石墨烯，并且半导体层可以包括2D半导体。 或者，存储器件可以包括第一和第二电极元件，在第一和第二电极元件之间的石墨烯层，在石墨烯层和第一电极元件之间的2D半导体层，以及在石墨烯层和第二电极之间的电介质层 。

公开(公告)号：US20150137074A1

公开(公告)日：2015-05-21

申请号：US14334028

申请日：2014-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho LEE ,  Kyung-eun BYUN ,  Hyun-jae SONG ,  Hyeon-jin SHIN ,  Min-Hyun LEE ,  In-kyeong YOO ,  Seong-jun PARK

IPC: H01L29/66 ,  H01L29/267 ,  H01L29/165 ,  H01L29/78 ,  H01L29/16

CPC classification number: H01L29/66977 ,  H01L21/76224 ,  H01L21/764 ,  H01L29/0649 ,  H01L29/1606 ,  H01L29/165 ,  H01L29/267 ,  H01L29/42364 ,  H01L29/66045 ,  H01L29/778 ,  H01L29/78

Abstract: A graphene device including separated junction contacts and a method of manufacturing the same are disclosed. The graphene device is a field effect transistor (FET) in which graphene is used as a channel. A source electrode and a drain electrode do not directly contact the graphene channel, and junction contacts formed by doping semiconductor are separately disposed between the graphene channel and the source electrode and between the graphene channel and the drain electrode. Therefore, in an off state where a voltage is not applied to a gate electrode, due to a barrier between the graphene channel and the junction contacts, carriers may not move. As a result, the graphene device may have low current in the off state.

Abstract translation: 公开了一种包括分离的接点的石墨烯器件及其制造方法。 石墨烯装置是其中使用石墨烯作为通道的场效应晶体管（FET）。 源电极和漏电极不直接接触石墨烯通道，并且由掺杂半导体形成的结接点分别设置在石墨烯通道和源电极之间以及石墨烯通道和漏电极之间。 因此，在由于石墨烯通道和接合点之间的阻挡而不向栅电极施加电压的关闭状态下，载体可能不移动。 结果，石墨烯器件在断开状态下可能具有低电流。

公开(公告)号：US20140231752A1

公开(公告)日：2014-08-21

申请号：US14180928

申请日：2014-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon-jin SHIN ,  Kyung-eun BYUN ,  Hyun-jae SONG ,  Seong-jun PARK ,  David SEO ,  Yun-sung WOO ,  Dong-wook LEE ,  Jae-ho LEE ,  Hyun-jong CHUNG ,  Jin-seong HEO ,  In-kyeong YOO

IPC: H01L29/16 ,  H01L33/34 ,  H01L31/028 ,  H01L29/786

CPC classification number: H01L29/1606 ,  H01L29/786 ,  H01L29/78642 ,  H01L29/78684 ,  H01L31/028 ,  H01L31/08 ,  H01L33/34 ,  H01L51/0046 ,  H01L51/0504 ,  H01L51/0558 ,  H01L51/0562 ,  H01L51/0566 ,  H01L51/057 ,  H01L51/428 ,  H01L51/50

Abstract: A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor.

Abstract translation: 提供了石墨烯装置和包括该石墨烯装置的电子装置。 根据示例性实施例，石墨烯装置包括晶体管，其包括源极，栅极和漏极，载流子移动的有源层以及栅极和有源层之间的石墨烯层。 石墨烯层可以被配置为既用作有源层的电极和晶体管的沟道层。

公开(公告)号：US20140141600A1

公开(公告)日：2014-05-22

申请号：US13917786

申请日：2013-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Wook LEE ,  Hyeon-jin SHIN ,  Seong-jun PARK ,  Kyung-eun BYUN ,  David SEO ,  Hyun-jae SONG ,  Yun-sung WOO ,  Jae-ho LEE ,  Hyun-jong CHUNG ,  Jin-seong HEO

IPC: H01L21/02

CPC classification number: H01L21/02527 ,  H01L21/0242 ,  H01L21/02529 ,  H01L21/02612 ,  H01L21/02656 ,  H01L29/1606

Abstract: A method of preparing graphene includes forming a silicon carbide thin film on a substrate, forming a metal thin film on the silicon carbide thin film, and forming a metal composite layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film.

Abstract translation: 制备石墨烯的方法包括在基板上形成碳化硅薄膜，在碳化硅薄膜上形成金属薄膜，通过加热碳化硅薄膜和金属薄膜，在基板上形成金属复合层和石墨烯 电影。