公开(公告)号：US08890171B2

公开(公告)日：2014-11-18

申请号：US13937563

申请日：2013-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun-sung Woo ,  Seon-mi Yoon ,  Hyeon-jin Shin ,  Dong-wook Lee ,  Jae-young Choi

IPC: H01L29/15 ,  H01L21/02 ,  H01L29/16

CPC classification number: H01L21/02527 ,  H01L21/02378 ,  H01L21/02612 ,  H01L21/02664 ,  H01L21/8213 ,  H01L29/1606 ,  H01L29/7781 ,  Y10S977/734

Abstract: A method of fabricating a single-layer graphene on a silicon carbide (SiC) wafer includes forming a plurality of graphene layers on the SiC wafer such that the plurality of graphene layers are on a buffer layer of the SiC wafer, the buffer layer being formed of carbon; removing the plurality of graphene layers from the buffer layer; and converting the buffer layer to a single-layer graphene.

Abstract translation: 在碳化硅（SiC）晶片上制造单层石墨烯的方法包括在SiC晶片上形成多个石墨烯层，使得多个石墨烯层位于SiC晶片的缓冲层上，形成缓冲层 的碳; 从缓冲层去除多个石墨烯层; 并将缓冲层转化为单层石墨烯。

公开(公告)号：US11407637B2

公开(公告)日：2022-08-09

申请号：US16906214

申请日：2020-06-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeon-jin Shin ,  Jae-young Choi ,  Yun-sung Woo ,  Seon-mi Yoon

IPC: C01B32/186 ,  C23C16/26 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02 ,  C23C16/02 ,  C23C16/56

Abstract: A method of preparing crystalline graphene includes performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor, introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon, and binding of the activated carbon on the inorganic substrate to grow the crystalline graphene.

公开(公告)号：US11062818B2

公开(公告)日：2021-07-13

申请号：US14588734

申请日：2015-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-jun Jeong ,  Seong-jun Park ,  Hyeon-jin Shin ,  Yea-hyun Gu ,  Hyoung-sub Kim ,  Jae-hyun Yang

IPC: B32B9/00 ,  H01B1/04 ,  C23C16/02 ,  C23C16/455 ,  H01L29/51 ,  H01L29/778 ,  C23C16/40 ,  H01L29/16

Abstract: Example embodiments relate to a stacking structure having a material layer formed on a graphene layer, and a method of forming the material layer on the graphene layer. In the stacking structure, when the material layer is formed on the graphene layer by using an ALD method, an intermediate layer as a seed layer may be formed on the graphene layer by using a linear type precursor.

公开(公告)号：US09193133B2

公开(公告)日：2015-11-24

申请号：US14165819

申请日：2014-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeon-jin Shin ,  Jae-young Choi ,  Joung-real Ahn ,  Jung-tak Seo

IPC: H01L21/265 ,  B32B9/04 ,  H01L21/02 ,  H01L31/0224 ,  H01L31/18 ,  H01L29/16 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y10/00 ,  H01L29/778 ,  H01M8/08 ,  H01M8/10 ,  H01M4/96 ,  H01M8/02

CPC classification number: B32B9/04 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02378 ,  H01L21/02488 ,  H01L21/02527 ,  H01L21/02656 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/778 ,  H01L31/022466 ,  H01L31/1884 ,  H01M4/96 ,  H01M8/0234 ,  H01M8/086 ,  H01M8/1007 ,  H01M8/1011 ,  H01M8/103 ,  H01M8/1041 ,  Y02E10/50 ,  Y02E60/523 ,  Y02P70/56

Abstract: A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.

Abstract translation: 一种直接生长石墨烯层状结构的石墨烯的方法，该方法包括在碳化硅（SiC）薄膜的表面上离子注入氮离子和氧离子的至少一个离子以形成离子注入层 SiC薄膜; 以及利用其中形成的离子注入层对SiC薄膜进行热处理以对存在于离子注入层上的SiC表面层进行石墨化。

公开(公告)号：US08981357B2

公开(公告)日：2015-03-17

申请号：US13847772

申请日：2013-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seon-mi Yoon ,  Hyeon-jin Shin ,  Jae-young Choi ,  Won-mook Choi ,  Soo-min Kim ,  Young-hee Lee

IPC: H01L29/16 ,  H01L21/04

CPC classification number: H01L29/1606 ,  H01G9/20 ,  H01G9/2022 ,  H01G9/2077 ,  H01L21/04 ,  H01L21/0405 ,  H01L29/16 ,  H01L51/0045 ,  H01L51/442 ,  H01L51/5203 ,  Y02E10/50 ,  Y02E10/542 ,  Y02E10/549

Abstract: A hydrophobic organic layer may be formed on a surface of a graphene doped with a dopant to improve stability of the doped graphene with respect to moisture and temperature. Thus, the transparent electrode having the doped graphene containing the hydrophobic organic layer may be usefully applied in solar cells or display devices.

Abstract translation: 可以在掺杂有掺杂剂的石墨烯的表面上形成疏水性有机层，以改善掺杂石墨烯相对于水分和温度的稳定性。 因此，具有含有疏水性有机层的掺杂石墨烯的透明电极可以有用地应用于太阳能电池或显示装置。