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公开(公告)号：US20230138601A1
公开(公告)日：2023-05-04
申请号：US17957532
申请日：2022-09-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-Wan NAM , Hyunggon KIM , Bong-Kil JUNG , Younho HONG , Juseong HWANG
IPC: G11C16/08
Abstract: Disclosed is a memory device includes a memory block that is connected with a plurality of wordlines, a voltage generating circuit configured to output a first non-selection voltage through a plurality of driving lines, and an address decoding circuit configured to connect the plurality of driving lines with unselected wordlines of the plurality of wordlines. During a wordline setup period for the plurality of wordlines, the voltage generating circuit floats first driving lines corresponding to first unselected wordlines of the unselected wordlines from among the plurality of driving lines when the first unselected wordlines reach a first target level, and floats second driving lines corresponding to second unselected wordlines of the unselected wordlines from among the plurality of driving lines when the second unselected wordlines reach a second target level different from the first target level.
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公开(公告)号：US20220157393A1
公开(公告)日：2022-05-19
申请号：US17530586
申请日：2021-11-19
Applicant: SAMSUNG ELECTRONICS CO.,LTD.
Inventor： Junyong PARK , Hyunggon KIM , Byungsoo Kim , Sungmin JOE
IPC: G11C16/34 , G11C16/04 , G11C16/24 , G11C16/08 , G11C11/56 , G11C16/10 , H01L27/11582 , G06F3/06
Abstract: A method for programming at least one memory cell of a plurality of memory cells included in a non-volatile memory device, the at least one memory cell including a word line and a bit line, the method including: performing a first and second program and verify operation based on a first and second condition, respectively, wherein each program and verify operation includes generating a program voltage and a bit line voltage by a voltage generator included in the non-volatile memory device and providing the program voltage and the bit line voltage to the word line and the bit line, respectively, wherein voltage levels and voltage application times of each program voltage and bit line voltage correspond to the first condition or the second condition, respectively, wherein the first condition is different from the second condition.
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公开(公告)号：US20220084600A1
公开(公告)日：2022-03-17
申请号：US17220368
申请日：2021-04-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sooyeol YANG , Hyunggon KIM , Youngsun SONG
IPC: G11C16/12 , H01L27/11573 , H01L27/11582
Abstract: A negative level shifter includes a shifting circuit and a latch circuit. The shifting circuit shifts levels of a first input signal and a second input signal to provide a first output signal and a second output signal having complementary levels at a first output node and a second output node, respectively, using low voltage transistors and high voltage transistors having different characteristics. The latch circuit, connected to the shifting circuit at the first output node and the second output node, latches the first output signal and the second output signal, receives a negative voltage having a level smaller than a ground voltage, and drives the second output signal and the first output signal complementarily to either a level of a power supply voltage or a level of the negative voltage, based on voltage levels at the first output node and the second output node, respectively.
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14.发明申请公开(公告)号：US20210093198A1
公开(公告)日：2021-04-01
申请号：US17043388
申请日：2019-04-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chungsoon PARK , Kyungmin KIM , Sujin PARK , Hyunggon KIM
Abstract: Disclosed is an electronic device comprising: a biometric sensor, including at least one light emitting diode (LED) and at least one light receiving unit, for acquiring biometric information by means of the at least one light emitting device and the at least one light receiving unit; a power receiving circuit configured to receive a wireless power signal from an external electronic device; and a processor operatively coupled to the biometric sensor and the power receiving circuit. The processor may be configured to receive a designated wireless power signal from the external electronic device by using the power receiving circuit and to perform optical communication with the external electronic device by using the biosensor when the designated wireless power signal is received. Other various embodiments identified from the specification are also possible.
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Patent Agency Ranking
公开(公告)号：US20240145016A1
公开(公告)日：2024-05-02
申请号：US18400297
申请日：2023-12-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Junyong PARK , Hyunggon KIM , Byungsoo KIM , Sungmin JOE
CPC classification number: G11C16/3459 , G06F3/0604 , G06F3/0655 , G06F3/0679 , G11C11/5671 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/24 , H10B43/27 , G11C2211/5621
Abstract: A method for programming at least one memory cell of a plurality of memory cells included in a non-volatile memory device, the at least one memory cell including a word line and a bit line, the method including: performing a first and second program and verify operation based on a first and second condition, respectively, wherein each program and verify operation includes generating a program voltage and a bit line voltage by a voltage generator included in the non-volatile memory device and providing the program voltage and the bit line voltage to the word line and the bit line, respectively, wherein voltage levels and voltage application times of each program voltage and bit line voltage correspond to the first condition or the second condition, respectively, wherein the first condition is different from the second condition.
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公开(公告)号：US20240072414A1
公开(公告)日：2024-02-29
申请号：US18323754
申请日：2023-05-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunggon KIM , Daeyoung OH , Jeseung OH , Jeonghoon LEE
CPC classification number: H01Q1/2283 , H01Q1/3275 , H01Q21/24
Abstract: An antenna device for a vehicle and a vehicle including the same are provided. The antenna device includes a printed circuit board (PCB), a plurality of antenna arrays arranged on a first surface of the PCB, a plurality of radio frequency integrated circuits (RFICs) arranged on a second surface of the PCB and electrically connected to the plurality of antenna arrays, and an intermediate frequency integrated circuit (IFIC) arranged on the second surface of the PCB to be apart from each of the plurality of RFICs by a same distance, the IFIC being electrically connected to the plurality of RFICs.
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17.发明公开公开(公告)号：US20230238066A1
公开(公告)日：2023-07-27
申请号：US18128596
申请日：2023-03-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Joonsuc JANG , Hyunggon KIM , Sangbum YUN , Dongwook KIM , Kyungsoo PARK , Sejin BAEK
CPC classification number: G11C16/3459 , G11C16/10 , G11C16/26 , G11C16/30 , G11C7/1087 , G11C7/1048 , G11C7/1045 , G11C7/106 , G11C16/24
Abstract: A method of programming a nonvolatile memory device includes performing a single-pulse program operation in a program loop, determining whether a condition is satisfied in the a program loop, and performing a multi-pulse program operation in a next program loop when the condition is satisfied. The single-pulse program operation includes applying a first program pulse and applying plural verification pulses, the multi-pulse program operation includes applying a second program pulse, applying a third program pulse, and applying plural verification pulses, and each of the second program pulse and the third program pulse has a level lower than a level of the first program pulse.
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18.发明申请公开(公告)号：US20220139473A1
公开(公告)日：2022-05-05
申请号：US17385493
申请日：2021-07-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Byungsoo KIM , Hyunggon KIM , Kyungsoo PARK , Sejin BAEK , Sangbum YUN
Abstract: A non-volatile memory device including a memory cell array including a plurality of cell strings, wherein each cell string of the plurality of cell stings includes a string selection transistor, a plurality of memory cells, and a ground selection transistor connected in series between a bit line and a common source line; and a control circuit configured to perform a program operation on a selected memory cell from among the plurality of memory cells and pre-charge a selected cell string including the selected memory cell in a pre-charge section included in a verification section, wherein the selected cell string is pre-charged as a first pre-charge voltage is applied to a selected bit line connected to the selected memory cell.
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19.发明申请公开(公告)号：US20220076766A1
公开(公告)日：2022-03-10
申请号：US17201828
申请日：2021-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Joonsuc JANG , Hyunggon KIM , Sangbum YUN , Dongwook KIM , Kyungsoo PARK , Sejin BAEK
Abstract: A method of programming a nonvolatile memory device includes performing a single-pulse program operation in a program loop, determining whether a condition is satisfied in the a program loop, and performing a multi-pulse program operation in a next program loop when the condition is satisfied. The single-pulse program operation includes applying a first program pulse and applying plural verification pulses, the multi-pulse program operation includes applying a second program pulse, applying a third program pulse, and applying plural verification pulses, and each of the second program pulse and the third program pulse has a level lower than a level of the first program pulse.
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