公开(公告)号：US20230073239A1

公开(公告)日：2023-03-09

申请号：US17812461

申请日：2022-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungmin Jang ,  Kibeen Jung ,  Donghyub Kang ,  Byeonghui Kim ,  Hyunkyo Oh ,  Sanghyun Choi

IPC: G06F3/06 ,  G06N20/00 ,  G06F12/02

Abstract: A method of operating a storage device includes receiving a learning request for setting a new parameter, evaluating a performance of a workload using a current parameter, performing machine learning in response to the learning request to infer relational expressions between a parameter and corresponding evaluation metrics, using performance evaluation information according to a performance evaluation of the workload and a plurality of learning models, deriving a new parameter using the inferred relational expressions, and applying the new parameter to a firmware algorithm.

公开(公告)号：US10424388B2

公开(公告)日：2019-09-24

申请号：US15615849

申请日：2017-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunkyo Oh ,  Seungkyung Ro ,  Heewon Lee ,  Seongnam Kwon ,  Oak-Ha Kim ,  Donggi Lee

IPC: G11C29/00 ,  G11C16/34 ,  G06N20/00 ,  G11C29/04 ,  G11C29/52 ,  G11C7/14 ,  G11C11/56 ,  G11C16/26 ,  G11C29/02 ,  G11C29/42 ,  G11C16/04

Abstract: A memory system includes multiple storage devices that each include a nonvolatile memory device. A client device is configured to collect deterioration information of the nonvolatile memory devices provided from the storage devices. A server device is configured to receive the collected deterioration information and to predict a degree of deterioration of the nonvolatile memory devices in real time by performing machine learning based on the collected deterioration information and initial deterioration information. The client device determines a read level of the nonvolatile memory device based on the degree of deterioration of the nonvolatile memory devices from the server device. The storage device sets the nonvolatile memory device to operate based on the read level determined in the client device.

公开(公告)号：US20250094062A1

公开(公告)日：2025-03-20

申请号：US18968373

申请日：2024-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyun Kang ,  Su Chang Jeon ,  Suhyun Kim ,  Hyuna Kim ,  Youngdeok Seo ,  Hyunkyo Oh ,  Donghoo Lim ,  Byungkwan Chun

IPC: G06F3/06

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes providing a read command to the non-volatile memory device, receiving first read data and first distribution information corresponding to the read command from the non-volatile memory device, determining whether an error of the first read data is uncorrectable, and updating offset information of a history table in the storage controller based on the first distribution information, in response to determining that the error of the first read data is correctable.

公开(公告)号：US11934701B2

公开(公告)日：2024-03-19

申请号：US17722780

申请日：2022-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun Kang ,  Youngdeok Seo ,  Hyuna Kim ,  Hyunkyo Oh ,  Donghoo Lim

IPC: G06F3/06 ,  G11C7/10

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0679 ,  G11C7/1051

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data includes a first count value and a second count value of a first read voltage and a third count value and a fourth count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a distribution type of the memory region to be a predicted distribution type, from among a plurality of distribution types, based on the OVS count data, and determining a subsequent operation, based on the predicted distribution type.

公开(公告)号：US20240012569A1

公开(公告)日：2024-01-11

申请号：US18184319

申请日：2023-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyun Kang ,  Su Chang Jeon ,  Suhyun Kim ,  Hyuna Kim ,  Youngdeok Seo ,  Hyunkyo Oh ,  Donghoo Lim ,  Byungkwan Chun

IPC: G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/0659 ,  G06F3/0679

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes providing a read command to the non-volatile memory device, receiving first read data and first distribution information corresponding to the read command from the non-volatile memory device, determining whether an error of the first read data is uncorrectable, and updating offset information of a history table in the storage controller based on the first distribution information, in response to determining that the error of the first read data is correctable.

公开(公告)号：US11822800B2

公开(公告)日：2023-11-21

申请号：US17848820

申请日：2022-06-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunkyo Oh ,  Sanghyun Choi ,  Heewon Lee

IPC: G06F3/06 ,  G06F12/06

CPC classification number: G06F3/0634 ,  G06F3/0607 ,  G06F3/0611 ,  G06F3/0658 ,  G06F3/0688 ,  G06F12/0646

Abstract: Provided are a storage system including a host and a storage device, and an operation method of the storage system. The storage device includes a memory controller and a memory device, where an operation method of the memory controller includes receiving from the host a first mode change request for a folder, which is a unit for managing at least one file, and a logical address of the at least one file, and in response to the first mode change request, rewriting to the memory device first data corresponding to the logical address in a second operating mode, and invalidating first data which is existing data already written to correspond to the logical address and the first data in a first operating mode, wherein the first mode change request sets a data operation speed to a high-speed mode for the at least one file included in the folder.

公开(公告)号：US11715538B2

公开(公告)日：2023-08-01

申请号：US17395872

申请日：2021-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunkyo Oh ,  Jinbaek Song ,  Kangho Roh

IPC: G11C16/34 ,  G11C16/26 ,  G11C16/16 ,  G06F18/214 ,  G06N3/045

CPC classification number: G11C16/3495 ,  G06F18/214 ,  G06N3/045 ,  G11C16/16 ,  G11C16/26

Abstract: A memory system includes a memory device including a plurality of blocks, a buffer storing degradation information regarding at least one of the plurality of blocks, and a memory controller configured to determine a degradation level of the block corresponding to the read request based on the degradation information, in response to a read request from a host, infer a read level corresponding to the read request based on the degradation level, and read data from the memory device based on the read level.

公开(公告)号：US11537842B2

公开(公告)日：2022-12-27

申请号：US16448636

申请日：2019-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunkyo Oh ,  Youngdeok Seo ,  Jinbaek Song ,  Sanghyun Choi

IPC: G06N3/04 ,  G06N5/04 ,  G11C16/26 ,  G11C16/04

Abstract: A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory that stores a plurality of on-cell counts, which are generated by reading memory cells connected to a plurality of reference word lines of the plurality of blocks by using a read level, and an artificial neural network model, and a controller that inputs an on-cell count corresponding to a target block among the plurality of on-cell counts and a number of a target word line of the target block to the artificial neural network model, and infers a plurality of read levels for reading data of memory cells connected to the target word line using the artificial neural network model.

公开(公告)号：US11409441B2

公开(公告)日：2022-08-09

申请号：US16999201

申请日：2020-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonji Kim ,  Youngdeok Seo ,  Chanha Kim ,  Kangho Roh ,  Hyunkyo Oh ,  Heewon Lee

IPC: G06F3/06 ,  G06N20/00 ,  G06F11/10

Abstract: An operation method of a storage controller which includes a nonvolatile memory device, the method including: collecting a first parameter indicating a degradation factor of a first memory area of the nonvolatile memory device and a second parameter indicating a degree of degradation occurring at the first memory area, in an initial driving period; selecting a first function model of a plurality of function models based on the first parameter and the second parameter and predicting a first error tendency of the first memory area based on the first function model; determining a first reliability interval based on the first error tendency; and performing a first reliability operation on the first memory area of the nonvolatile memory device based on the first reliability interval.

公开(公告)号：US11114174B2

公开(公告)日：2021-09-07

申请号：US16819374

申请日：2020-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunkyo Oh ,  Jinbaek Song ,  Kangho Roh

IPC: G11C16/34 ,  G11C16/26 ,  G06N3/04 ,  G06K9/62 ,  G11C16/16

Abstract: A memory system includes a memory device including a plurality of blocks, a buffer storing degradation information regarding at least one of the plurality of blocks, and a memory controller configured to determine a degradation level of the block corresponding to the read request based on the degradation information, in response to a read request from a host, infer a read level corresponding to the read request based on the degradation level, and read data from the memory device based on the read level.