公开(公告)号：US12074157B2

公开(公告)日：2024-08-27

申请号：US17320477

申请日：2021-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Lim Kang ,  Hyun-Jo Kim ,  Jong-Mil Youn ,  Soo-Hun Hong

IPC: H01L27/02 ,  H01L21/02 ,  H01L27/088 ,  H01L29/08 ,  H01L29/16 ,  H01L29/78

CPC classification number: H01L27/0266 ,  H01L21/02293 ,  H01L27/0248 ,  H01L27/0886 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/7831 ,  H01L29/785

Abstract: An ESD protection device includes a substrate having an active fin extending in a first direction, a plurality of gate structures extending in a second direction at a given angle with respect to the first direction and partially covering the active fin, an epitaxial layer in a recess on a portion of the active fin between the gate structures, an impurity region under the epitaxial layer, and a contact plug contacting the epitaxial layer. A central portion of the impurity region is thicker than an edge portion of the impurity region, in the first direction. The contact plug lies over the central portion of the impurity region.

公开(公告)号：US20200303547A1

公开(公告)日：2020-09-24

申请号：US16895059

申请日：2020-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Hyung-Soon Jang ,  Jong-Mil Youn ,  Tae-Won Ha

IPC: H01L29/78 ,  H01L29/423 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51 ,  H01L29/06 ,  H01L29/161 ,  H01L29/20 ,  H01L29/165 ,  H01L27/02

Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

公开(公告)号：US09515182B2

公开(公告)日：2016-12-06

申请号：US14971026

申请日：2015-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Hyung-Soon Jang ,  Jong-Mil Youn ,  Tae-Won Ha

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/423 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L29/06 ,  H01L29/161 ,  H01L29/20 ,  H01L29/165 ,  H01L27/02

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

公开(公告)号：US09478551B2

公开(公告)日：2016-10-25

申请号：US14081543

申请日：2013-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Hun Kim ,  Ju-Youn Kim ,  Koung-Min Ryu ,  Jong-Mil Youn ,  Jong-Ho Lee

IPC: H01L21/70 ,  H01L29/76 ,  H01L27/11 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L27/1104 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/1029

Abstract: A semiconductor device includes a channel layer over an active region, first and second field regions adjacent the active region, and a gate structure over the channel layer and portions of the first and second field regions. The first and second field regions include grooves adjacent respective sidewalls of the channel layer, and bottom surfaces of the grooves are below a bottom surface of the channel layer.

Abstract translation: 半导体器件包括在有源区上的沟道层，与有源区相邻的第一和第二场区以及沟道层上的栅极结构以及第一和第二场区的部分。 第一和第二场区域包括与沟道层的相应侧壁相邻的沟槽，并且沟槽的底表面在沟道层的底表面下方。

公开(公告)号：US20160043084A1

公开(公告)日：2016-02-11

申请号：US14881525

申请日：2015-10-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Hyung-Soon Jang ,  Jong-Mil Youn ,  Tae-Won Ha

IPC: H01L27/092 ,  H01L29/49 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

公开(公告)号：US09048219B2

公开(公告)日：2015-06-02

申请号：US14165930

申请日：2014-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Hyung-Soon Jang ,  Jong-Mil Youn ,  Tae-Won Ha

IPC: H01L29/423

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

Abstract translation: 半导体器件包括：衬底，包括第一有源区，第二有源区和第一有源区和第二有源区之间的场区;以及栅极结构，形成在衬底上以跨过第一有源区，第二有源区和场 地区。 栅极结构包括彼此直接接触的p型金属栅电极和n型金属栅极电极，p型金属栅极电极从第一有源区域延伸到第二有源区域的一半以下。

公开(公告)号：US11581435B2

公开(公告)日：2023-02-14

申请号：US16895059

申请日：2020-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Hyung-Soon Jang ,  Jong-Mil Youn ,  Tae-Won Ha

IPC: H01L29/78 ,  H01L29/423 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51 ,  H01L29/06 ,  H01L29/161 ,  H01L29/20 ,  H01L29/165 ,  H01L27/02

Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

公开(公告)号：US11011511B2

公开(公告)日：2021-05-18

申请号：US16167117

申请日：2018-10-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Lim Kang ,  Hyun-Jo Kim ,  Jong-Mil Youn ,  Soo-Hun Hong

IPC: H01L27/02 ,  H01L29/16 ,  H01L29/08 ,  H01L27/088 ,  H01L29/78 ,  H01L21/02

Abstract: An ESD protection device includes a substrate having an active fin extending in a first direction, a plurality of gate structures extending in a second direction at a given angle with respect to the first direction and partially covering the active fin, an epitaxial layer in a recess on a portion of the active fin between the gate structures, an impurity region under the epitaxial layer, and a contact plug contacting the epitaxial layer. A central portion of the impurity region is thicker than an edge portion of the impurity region, in the first direction. The contact plug lies over the central portion of the impurity region.

公开(公告)号：US10714614B2

公开(公告)日：2020-07-14

申请号：US16109350

申请日：2018-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Hyung-Soon Jang ,  Jong-Mil Youn ,  Tae-Won Ha

IPC: H01L29/78 ,  H01L29/423 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51 ,  H01L29/06 ,  H01L29/161 ,  H01L29/20 ,  H01L29/165 ,  H01L27/02

Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

公开(公告)号：US10084088B2

公开(公告)日：2018-09-25

申请号：US15618623

申请日：2017-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Hyung-Soon Jang ,  Jong-Mil Youn ,  Tae-Won Ha

IPC: H01L21/8238 ,  H01L29/78 ,  H01L29/423 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51 ,  H01L29/06 ,  H01L29/161 ,  H01L29/20 ,  H01L29/165 ,  H01L27/02

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.