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    Dishwasher
    12.
    发明授权
    Dishwasher 有权

    公开(公告)号：US11617491B2

    公开(公告)日：2023-04-04

    申请号：US16913516

    申请日：2020-06-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kitae Park ,  Youngjae Kim ,  Youngsu Ser ,  Changwook Lee

    IPC: A47L15/42 ,  A47L15/22

    Abstract: A dishwasher with an improved door structure. The dishwasher includes a cabinet having a washing tub and a door installed at one side of the cabinet to open and close the washing tub, wherein the door includes a door member in which an electrical component is installed, a handle member installed on the door member to form a handle, and a water discharge channel allowing water to be discharged to outside of the door through the door member and the handle member.

    Nonvolatile memory system that erases memory cells when changing their mode of operation
    14.
    发明授权
    Nonvolatile memory system that erases memory cells when changing their mode of operation 有权

    公开(公告)号：US10115466B2

    公开(公告)日：2018-10-30

    申请号：US15687564

    申请日：2017-08-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyun-Wook Park ,  Kitae Park ,  Jaeyong Jeong

    IPC: G11C11/06 ,  G11C16/14 ,  G11C16/04 ,  G11C16/34 ,  G11C11/56 ,  G11C16/08 ,  G11C16/26

    Abstract: An method of operating a memory system including a plurality of memory cells includes changing an operation mode at least some of the memory cells which operate based on a first operation mode to operate based on a second operation mode; and performing a change erase operation on the memory cells for which an operation mode is changed on the basis of a change erase condition when the operation mode is changed. When memory cells operate in the first operation mode, a normal erase operation is performed based on a first erase condition, and when memory cells operate in the second operation mode, a normal erase operation is performed based on a second erase condition. The change erase condition is different from at least one of the first and second erase conditions.

    Memory systems and block copy methods thereof
    18.
    发明授权
    Memory systems and block copy methods thereof 有权
    存储器系统及其块复制方法

    公开(公告)号：US09032272B2

    公开(公告)日：2015-05-12

    申请号：US13690544

    申请日：2012-11-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sangyong Yoon ,  Kitae Park ,  Jinman Han

    IPC: G11C29/00 ,  G06F11/10

    CPC classification number: G06F11/1068 ,  G06F11/1008 ,  G06F11/1072 ,  G11C29/52

    Abstract: Methods of operating memory systems and nonvolatile memory devices include performing error checking and correction (ECC) operations on M pages of data read from a first “source” portion of M-bit nonvolatile memory cells within the nonvolatile memory device to thereby generate M pages of ECC-processed data, where M is a positive integer greater than two (2). A second “target” portion of M-bit nonvolatile memory cells within the nonvolatile memory device is then programmed with the M pages of ECC-processed data using, for example, an address-scrambled reprogramming technique.

    Abstract translation: 操作存储器系统和非易失性存储器件的方法包括在从非易失性存储器件中的M位非易失性存储器单元的第一“源”部分读取的M页数据上执行错误校验和校正（ECC）操作，从而产生M页的 ECC处理的数据，其中M是大于2（2）的正整数。 然后使用例如地址加扰的重新编程技术，用非易失性存储器件中的M位非易失性存储单元的第二个“目标”部分用ECC处理数据的M页编程。

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