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    Method and system for providing magnetic junctions including Heusler multilayers
    13.
    发明授权
    Method and system for providing magnetic junctions including Heusler multilayers 有权

    公开(公告)号：US09634241B2

    公开(公告)日：2017-04-25

    申请号：US14809113

    申请日：2015-07-24

    Applicant: Samsung Electronics Co., LTD.

    Inventor： William H. Butler ,  Kamaram Munira ,  Roman Chepulskyy ,  Dmytro Apalkov

    IPC: H01L43/08 ,  H01L43/10

    CPC classification number: H01L43/08 ,  H01L43/10

    Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a reference layer and nonmagnetic spacer layer between the free and reference layers. At least one of the free and reference layers includes at least one Heusler multilayer. Each of the at least one Heusler multilayer includes a plurality of Heusler adjoining layers that at least one interface. The Heusler layers include a plurality of Heusler alloys, have a plurality of lattice parameters and have a plurality of coefficients of thermal expansion. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

    METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS INCLUDING HEUSLER MULTILAYERS
    14.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS INCLUDING HEUSLER MULTILAYERS 有权
    用于提供包括多孔多层膜的磁性结的方法和系统

    公开(公告)号：US20160043301A1

    公开(公告)日：2016-02-11

    申请号：US14809113

    申请日：2015-07-24

    Applicant: Samsung Electronics Co., LTD.

    Inventor： William H. Butler ,  Kamaram Munira ,  Roman Chepulskyy ,  Dmytro Apalkov

    IPC: H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22

    CPC classification number: H01L43/08 ,  H01L43/10

    Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a reference layer and nonmagnetic spacer layer between the free and reference layers. At least one of the free and reference layers includes at least one Heusler multilayer. Each of the at least one Heusler multilayer includes a plurality of Heusler adjoining layers that at least one interface. The Heusler layers include a plurality of Heusler alloys, have a plurality of lattice parameters and have a plurality of coefficients of thermal expansion. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

    Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁结包括自由层，参考层和在自由层和参考层之间的非磁性间隔层。 游离和参考层中的至少一个包括至少一个Heusler多层。 至少一个Heusler多层中的每一个包括多个Heusler邻接层，至少一个界面。 Heusler层包括多个Heusler合金，具有多个晶格参数并且具有多个热膨胀系数。 磁结被配置为使得当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。

    METHOD AND SYSTEM FOR PROVIDING A THERMALLY ASSISTED SPIN TRANSFER TORQUE MAGNETIC DEVICE INCLUDING SMART THERMAL BARRIERS
    15.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A THERMALLY ASSISTED SPIN TRANSFER TORQUE MAGNETIC DEVICE INCLUDING SMART THERMAL BARRIERS 有权
    用于提供包括智能热障碍的热辅助转子扭矩磁装置的方法和系统

    公开(公告)号：US20150294703A1

    公开(公告)日：2015-10-15

    申请号：US14559536

    申请日：2014-12-03

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Dmytro Apalkov ,  Roman Chepulskyy

    IPC: G11C11/16 ,  H01L43/02

    CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08

    Abstract: A magnetic device usable in electronic devices is described. The magnetic device includes a magnetic junction and at least one smart thermal barrier that is thermally coupled with the magnetic junction. The magnetic junction includes at least one reference layer, at least one nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer(s) are between the reference layer(s) and the free layer. The free layer is switchable between stable magnetic states when a write current passed through the magnetic junction. The smart thermal barrier has a low heat conductance below a transition temperature range, and a high heat conductance above the transition temperature range.

    Abstract translation: 描述可用于电子设备的磁性装置。 磁性装置包括磁结和至少一个与磁结热耦合的智能热障。 磁结包括至少一个参考层，至少一个非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。 智能隔热板具有低于过渡温度范围的低导热系数，高于过渡温度范围的高导热系数。

    MAGNETIC JUNCTIONS HAVING INSERTION LAYERS AND MAGNETIC MEMORIES USING THE MAGNETIC JUNCTIONS
    17.
    发明申请
    MAGNETIC JUNCTIONS HAVING INSERTION LAYERS AND MAGNETIC MEMORIES USING THE MAGNETIC JUNCTIONS 有权
    具有磁性结的插入层和磁记录的磁性连接

    公开(公告)号：US20140264671A1

    公开(公告)日：2014-09-18

    申请号：US14048329

    申请日：2013-10-08

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Roman Chepulskyy ,  Xueti Tang ,  Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi

    IPC: H01L43/02 ,  H01L43/10

    CPC classification number: H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  G11C11/5607 ,  H01L43/08 ,  H01L43/12

    Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. A portion of the magnetic junction includes at least one magnetic substructure. The magnetic substructure includes at least one Fe layer and at least one nonmagnetic insertion layer. The at least one Fe layer shares at least one interface with the at least one nonmagnetic insertion layer. Each of the at least one nonmagnetic insertion layer consists of at least one of W, I, Hf, Bi, Zn, Mo, Ag, Cd, Os and In.

    Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括参考层，非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 磁结的一部分包括至少一个磁性子结构。 磁性亚结构包括至少一个Fe层和至少一个非磁性插入层。 所述至少一个Fe层与所述至少一个非磁性插入层共享至少一个界面。 所述至少一个非磁性插入层中的每一个由W，I，Hf，Bi，Zn，Mo，Ag，Cd，Os和In中的至少一种构成。

    DIPOLE-COUPLED SPIN-ORBIT TORQUE STRUCTURE
    18.
    发明申请
    DIPOLE-COUPLED SPIN-ORBIT TORQUE STRUCTURE 有权

    公开(公告)号：US20220068538A1

    公开(公告)日：2022-03-03

    申请号：US17127695

    申请日：2020-12-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dmytro Apalkov ,  Jaewoo Jeong ,  Ikhtiar ,  Roman Chepulskyy

    IPC: H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

    Abstract: A magnetic device is described. The magnetic device includes a magnetic junction, a spin-orbit interaction (SO) line and a dipole-coupled layer. The magnetic junction includes a free layer. The SO line is adjacent to the free layer, carries a current in-plane and exerts a SO torque on the free layer due to the current passing through the SO line. The free layer being switchable between stable magnetic states using the SO torque. The SO line is between the free layer and the dipole-coupled layer. The dipole-coupled layer is magnetically coupled to the free layer. At least one of the free layer and the dipole-coupled layer has a damping of greater than 0.02.

    RACE-TRACK MEMORY WITH IMPROVED DOMAIN WALL MOTION CONTROL
    19.
    发明申请
    RACE-TRACK MEMORY WITH IMPROVED DOMAIN WALL MOTION CONTROL 有权

    公开(公告)号：US20220068338A1

    公开(公告)日：2022-03-03

    申请号：US17127732

    申请日：2020-12-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dmytro Apalkov ,  Sungchul Lee ,  Roman Chepulskyy

    IPC: G11C11/16 ,  G11C11/18

    Abstract: A system including a racetrack memory layer is described. The racetrack memory layer includes a plurality of bit locations and a plurality of domain wall traps. The bit locations are interleaved with the domain wall traps. Each of the bit locations has a first domain wall speed. Each of the domain wall traps has a second domain wall speed. The first domain wall speed is greater than the second domain wall speed. The first domain wall speed and the second domain wall speed are due to at least one of a Dzyaloshinskii-Moriya interaction variation in the racetrack memory layer, a synthetic antiferromagnetic effect variation in the racetrack memory layer, and a separation distance for the plurality of domain wall traps corresponding to an intrinsic travel distance. The separation distance is less than one hundred nanometers.

    Method and system for providing a diluted free layer magnetic junction usable in spin transfer or spin-orbit torque applications
    20.
    发明授权
    Method and system for providing a diluted free layer magnetic junction usable in spin transfer or spin-orbit torque applications 有权

    公开(公告)号：US10205092B2

    公开(公告)日：2019-02-12

    申请号：US16005617

    申请日：2018-06-11

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Roman Chepulskyy ,  Dmytro Apalkov

    IPC: H01L43/10 ,  H01L27/22 ,  H01F10/32 ,  H01F41/30 ,  G11C11/16 ,  H01L43/12 ,  H01L43/02

    Abstract: A magnetic device and method for providing the magnetic device are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer has a free layer perpendicular magnetic anisotropy (PMA) energy greater than a free layer out-of-plane demagnetization energy. The free layer also includes a diluted magnetic layer that has a PMA greater than its out-of-plane demagnetization energy. The diluted magnetic layer includes magnetic material(s) and nonmagnetic material(s) and has an exchange stiffness that is at least eighty percent of an exchange stiffness for the magnetic material(s). The SO active layer(s) are adjacent to the free layer. The SO active layer(s) carry a current in-plane and exert a SO torque on the free layer due to the current. The free layer is switchable between stable magnetic states using the SO torque.

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