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公开(公告)号：US20250012736A1
公开(公告)日：2025-01-09
申请号：US18662244
申请日：2024-05-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dohun Kim , Mincheol Kwak , Junseong Yoon , Jeongjin Lee , Seungyoon Lee , Chan Hwang
IPC: G01N21/956 , G01N21/95 , G06T7/00
Abstract: A method of optimizing an overlay measurement condition includes measuring, for each overlay measurement condition of multiple overlay measurement conditions, an overlay at multiple positions on a substrate; calculating, for each of the multiple overlay measurement conditions, key parameter indexes (KPIs) based on the measured overlay; converting, for each of the multiple overlay measurement conditions, the KPIs into key parameter function (KPF) values based on a KPF, where each of the KPFs has a same dimensional representation; integrating, for each of the multiple overlay measurement conditions, the KPF values to generate an integrated KPF value; and selecting an optimized overlay measurement condition from among the multiple overlay measurement conditions based on the integrated KPF values associated with each of the multiple overlay measurement conditions.
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公开(公告)号：US11921421B2
公开(公告)日：2024-03-05
申请号：US18062231
申请日：2022-12-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeongjin Lee , Minseok Kang , Seungyoon Lee , Chan Hwang
CPC classification number: G03F1/70 , G03F7/2004 , G06F17/18 , H01L22/12
Abstract: An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.
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公开(公告)号：US20240027890A1
公开(公告)日：2024-01-25
申请号：US18180210
申请日：2023-03-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyungjong Bae , Hyun Jung Hwang , Heebom Kim , Seong-Bo Shim , Seungyoon Lee , Woo-Yong Jung , Chan Hwang
Abstract: A reflective mask used in an EUV exposure process includes a mask substrate, a reflective layer on the mask substrate, and an absorption layer on the reflective layer. The reflective mask includes a main region, an out-of-band region surrounding the main region, and an alignment mark region outside a periphery of the out-of-band region. The absorption layer in the alignment mark region includes an alignment mark and an anti-reflection pattern adjacent the alignment mark, and the anti-reflection pattern includes line-and-space patterns having a predetermined line width in the alignment mark region.
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Patent Agency Ranking
公开(公告)号：US11537042B2
公开(公告)日：2022-12-27
申请号：US16807734
申请日：2020-03-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeongjin Lee , Minseok Kang , Seungyoon Lee , Chan Hwang
Abstract: An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.
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公开(公告)号：US11137673B1
公开(公告)日：2021-10-05
申请号：US16952844
申请日：2020-11-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Doogyu Lee , Seungyoon Lee , Jeongjin Lee , Chan Hwang
IPC: G03F1/24 , G03F7/20 , H01L21/027
Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus for improving an overlay error in a EUV exposure process, and an overlay correction method and a semiconductor device fabricating method using the exposure apparatus. The EUV exposure apparatus includes an EUV light source; a first optical system configured to emit EUV light from the EUV light source to an EUV mask; a second optical system configured to emit EUV light reflected from the EUV mask to a wafer; a mask stage; a wafer stage; and a control unit configured to control the mask stage and the wafer stage, wherein, based on a correlation between a first overlay parameter, which is one of parameters of overlay errors between layers on the wafer, and a second overlay parameter, which is another parameter, the first overlay parameter is corrected through correction of the second overlay parameter.
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公开(公告)号：US20230095808A1
公开(公告)日：2023-03-30
申请号：US18062231
申请日：2022-12-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeongjin Lee , Minseok Kang , Seungyoon Lee , Chan Hwang
Abstract: An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.
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公开(公告)号：US20220214624A1
公开(公告)日：2022-07-07
申请号：US17401611
申请日：2021-08-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeongjin Lee , Doogyu Lee , Seungyoon Lee
IPC: G03F7/20 , H01L21/027 , G03F9/00
Abstract: A method of manufacturing a semiconductor device is provided. The method includes transferring an internal shot and an external shot by performing a patterning process on a first wafer, analyzing an overlay of the first wafer, and performing a lithography process on a second wafer, based on the analyzing of the overlay of the first wafer, wherein the analyzing of the overlay of the first wafer includes providing, to the first region, first augmented overlays generated based on an orthogonal coordinate system using first and second directions perpendicular to each other as an axis, and providing, to the second region, second augmented overlays that are overlays in a radial direction from the center of the first wafer.
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公开(公告)号：US20140254916A1
公开(公告)日：2014-09-11
申请号：US14182697
申请日：2014-02-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeongjin Lee , Chan Hwang , Seungyoon Lee
IPC: G06T7/00
CPC classification number: G06T7/001 , G03F7/70633 , G06T7/174 , G06T2207/10048 , G06T2207/10152 , G06T2207/30148 , G06T2207/30204 , H04N5/2256 , H04N5/332
Abstract: A method for measuring overlay includes receiving a first image of a first overlay mark captured using light having a first wavelength. The method includes receiving a second image of a second overlay mark captured using light having a second wavelength different from the first wavelength. The method includes measuring a displacement between a central portion of the first image and a central portion of the second image, wherein the first and second overlay marks are disposed on different levels.
Abstract translation: 一种用于测量覆盖层的方法包括接收使用具有第一波长的光捕获的第一覆盖标记的第一图像。 该方法包括接收使用具有不同于第一波长的第二波长的光捕获的第二重叠标记的第二图像。 该方法包括测量第一图像的中心部分和第二图像的中心部分之间的位移，其中第一和第二覆盖标记设置在不同的水平上。
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