公开(公告)号：US09383771B2

公开(公告)日：2016-07-05

申请号：US13915906

申请日：2013-06-12

Applicant: Samsung Electronics Co., Ltd

Inventor： Tae-young Kim ,  Yun-pil Yeom ,  Jin-gyu Choi

IPC: G06F1/16 ,  H05K5/00 ,  H05K7/00

CPC classification number: G06F1/1632 ,  G06F1/1616

Abstract: A docking station for an electronic device includes a station body to which the electronic device is detachably docked, at least one locking unit comprising a hook member to move between a first position in which the station body and the electronic device are connected and a second position in which the station body is separated from the electronic device, and a lock maintaining unit to maintain the hook member in the first position.

Abstract translation: 一种用于电子设备的对接站包括：电子设备可拆卸地对接的站台;至少一个锁定单元，包括钩构件，用于在站主体和电子设备连接的第一位置和第二位置之间移动; 其中站主体与电子设备分离，以及锁定保持单元，用于将钩构件保持在第一位置。

公开(公告)号：US12015086B2

公开(公告)日：2024-06-18

申请号：US17315818

申请日：2021-05-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Hoon Lee ,  Gi-gwan Park ,  Tae-young Kim

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/15 ,  H01L29/16 ,  H01L29/20 ,  H01L29/22 ,  H01L29/267 ,  H01L29/66

CPC classification number: H01L29/7851 ,  H01L29/0847 ,  H01L29/155 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2006 ,  H01L29/2206 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7854

Abstract: A semiconductor device includes a substrate including a fin-shaped active region that protrudes from the substrate, a gate insulating film covering a top surface and both side walls of the fin-shaped active region, a gate electrode on the top surface and the both side walls of the fin-shaped active region and covering the gate insulating film, one pair of insulating spacers on both side walls of the gate electrode, one pair of source/drain region on the fin-shaped active region and located on both sides of the gate electrode, and a lower buffer layer between the fin-shaped active region the source/drain region. The source/drain regions include a compound semiconductor material including atoms from different groups. The lower buffer layer includes a compound semiconductor material that is amorphous and includes atoms from different groups.

公开(公告)号：US10431685B2

公开(公告)日：2019-10-01

申请号：US15404673

申请日：2017-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hoon Lee ,  Gi-gwan Park ,  Tae-young Kim ,  Yi-young Na ,  Dae-hee Kim

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L21/8234

Abstract: A semiconductor device includes a substrate including a fin-shaped active region that protrudes from the substrate; a gate insulating film covering a top surface and both side walls of the fin-shaped active region; a gate electrode on the top surface and the both side walls of the fin-shaped active region and covering the gate insulating film; one pair of insulating spacers on both side walls of the gate electrode; and a source region and a drain region on the substrate and respectively located on sides of the gate electrode. The source region and the drain region form a source/drain pair. The one pair of insulating spacers include protrusions that protrude from upper portions of the one pair of insulating spacers toward the gate electrode.

公开(公告)号：US10141619B2

公开(公告)日：2018-11-27

申请号：US15335645

申请日：2016-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-sik Park ,  Tae-young Kim ,  Dong-joon Lee ,  Sang-bok Ma ,  Dong-min Im ,  Victor Roev

IPC: H01M8/22 ,  H01M12/08 ,  H01M12/06 ,  H01M6/18 ,  H01M2/18 ,  H01M2/16 ,  H01M12/02 ,  H01M10/04 ,  H01M4/02

Abstract: A metal-air battery including: a negative electrode metal layer; a negative electrode electrolyte layer disposed on the negative electrode metal layer; a positive electrode layer disposed on the negative electrode electrolyte layer, the positive electrode layer comprising a positive electrode material which is capable of using oxygen as an active material; and a gas diffusion layer disposed on the positive electrode layer, wherein the negative electrode electrolyte layer is between the negative electrode metal layer and the positive electrode layer; wherein the negative electrode metal layer, the negative electrode electrolyte layer, and the positive electrode layer are disposed on the gas diffusion layer so that the positive electrode layer contacts a lower surface and an opposite upper surface of the gas diffusion layer, and wherein one side surface of the gas diffusion layer is exposed to an outside.

公开(公告)号：US10135084B2

公开(公告)日：2018-11-20

申请号：US13934374

申请日：2013-07-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-myung Lee ,  Tae-young Kim ,  Young-sin Park ,  Seung-wook Baek

IPC: H01M10/0562 ,  H01M10/0525 ,  H01M8/10 ,  H01M8/1016 ,  H01M10/052 ,  H01M4/13 ,  H01M4/62 ,  H01M12/06 ,  H01M2/16 ,  H01M4/36

Abstract: A solid ion conductor including a garnet oxide represented by Formula 1: L5+xE3(Mez,M2-z)Od  Formula 1 wherein L includes Li and is at least one of a monovalent cation and a divalent cation; E is a trivalent cation; Me and M are each independently one of a trivalent, tetravalent, pentavalent, and hexavalent cation; 0

公开(公告)号：US09859559B2

公开(公告)日：2018-01-02

申请号：US13938373

申请日：2013-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-young Kim ,  Young-sin Park ,  Seung-wook Baek ,  Jae-myung Lee

IPC: H01M4/58 ,  H01M6/16 ,  H01M10/0525 ,  H01M10/056 ,  H01M4/13 ,  H01M4/62 ,  H01M10/052 ,  H01M10/0562 ,  H01M10/0566 ,  H01M6/18 ,  H01M12/08 ,  H01M4/36 ,  H01M12/06

CPC classification number: H01M4/5825 ,  H01M4/13 ,  H01M4/366 ,  H01M4/62 ,  H01M6/168 ,  H01M6/185 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/056 ,  H01M10/0562 ,  H01M10/0566 ,  H01M12/06 ,  H01M12/08 ,  H01M2300/0068 ,  Y02E60/128

Abstract: A lithium ion conductor represented by Formula 1: Li1+x+2yAlxMgyM2−x−y(PO4)3   Formula 1 wherein, in Formula 1, M includes at least one of titanium (Ti), germanium (Ge), zirconium (Zr), hafnium (Hf), and tin (Sn), 0