公开(公告)号：US20230365861A1

公开(公告)日：2023-11-16

申请号：US18223709

申请日：2023-07-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taekhoon Kim ,  Nayoun Won ,  Tae Gon Kim ,  Mi Hye Lim ,  Shin Ae Jun ,  Shang Hyeun Park

IPC: C09K11/88 ,  C09K11/02 ,  H10K50/115

CPC classification number: C09K11/883 ,  C09K11/02 ,  H10K50/115 ,  B82Y15/00

Abstract: A quantum dot-polymer composite including a polymer matrix; and core-shell quantum dots dispersed in the polymer matrix, wherein the core-shell quantum dots include a semiconductor nanocrystal core including indium, zinc, and phosphorus and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur. The core-shell quantum dots do not include cadmium, the core-shell quantum dots are configured to emit green light, the core-shell quantum dots have a mole ratio of phosphorus to indium of greater than or equal to about 0.75, and the core-shell quantum dots have a mole ratio of zinc to indium of greater than or equal to about 35, and a method of producing the core-shell quantum dots, and a display device including a light emitting element that includes the quantum dot-polymer composite.

公开(公告)号：US20210139776A1

公开(公告)日：2021-05-13

申请号：US17092368

申请日：2020-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taekhoon Kim ,  Nayoun Won ,  Tae Gon Kim ,  Mi Hye Lim ,  Shin Ae Jun ,  Shang Hyeun Park

IPC: C09K11/88 ,  C09K11/02 ,  H01L51/50

Abstract: A quantum dot-polymer composite including a polymer matrix; and core-shell quantum dots dispersed in the polymer matrix, wherein the core-shell quantum dots include a semiconductor nanocrystal core including indium, zinc, and phosphorus and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur. The core-shell quantum dots do not include cadmium, the core-shell quantum dots are configured to emit green light, the core-shell quantum dots have a mole ratio of phosphorus to indium of greater than or equal to about 0.75, and the core-shell quantum dots have a mole ratio of zinc to indium of greater than or equal to about 35, and a method of producing the core-shell quantum dots, and a display device including a light emitting element that includes the quantum dot-polymer composite.

公开(公告)号：US10723942B2

公开(公告)日：2020-07-28

申请号：US15387107

申请日：2016-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin Ae Jun ,  Taekhoon Kim ,  Garam Park ,  Yong Seok Han ,  Eun Joo Jang ,  Hyo Sook Jang ,  Tae Won Jeong ,  Shang Hyeun Park

IPC: C09K11/02 ,  C09K11/88 ,  C09K11/70 ,  C08K3/30 ,  C08K3/32 ,  H01L51/50 ,  G02F1/1335 ,  G02F1/13357 ,  B82Y40/00 ,  B82Y20/00 ,  B82Y30/00

Abstract: A quantum dot-polymer composite including a polymer matrix; and a plurality of quantum dots dispersed in the polymer matrix, wherein the quantum dot includes a core including a first semiconductor material; and a shell including a second semiconductor material disposed on the core, wherein the quantum dot is cadmium-free, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.

公开(公告)号：US10559712B2

公开(公告)日：2020-02-11

申请号：US16111848

申请日：2018-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Garam Park ,  Tae Hyung Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Shin Ae Jun ,  Yongwook Kim ,  Taekhoon Kim ,  Jihyun Min ,  Yuho Won

IPC: H01L33/04 ,  C09K11/61 ,  H01L33/28 ,  H01L33/34 ,  C09K11/02 ,  C09K11/70 ,  C09K11/88 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32

Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.

公开(公告)号：US11912920B2

公开(公告)日：2024-02-27

申请号：US17092368

申请日：2020-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taekhoon Kim ,  Nayoun Won ,  Tae Gon Kim ,  Mi Hye Lim ,  Shin Ae Jun ,  Shang Hyeun Park

IPC: C09K11/88 ,  C09K11/02 ,  H10K50/115 ,  B82Y15/00 ,  B82Y40/00 ,  C01B25/08

CPC classification number: C09K11/883 ,  C09K11/02 ,  H10K50/115 ,  B82Y15/00 ,  B82Y40/00 ,  C01B25/087

Abstract: A quantum dot-polymer composite including a polymer matrix; and core-shell quantum dots dispersed in the polymer matrix, wherein the core-shell quantum dots include a semiconductor nanocrystal core including indium, zinc, and phosphorus and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur. The core-shell quantum dots do not include cadmium, the core-shell quantum dots are configured to emit green light, the core-shell quantum dots have a mole ratio of phosphorus to indium of greater than or equal to about 0.75, and the core-shell quantum dots have a mole ratio of zinc to indium of greater than or equal to about 35, and a method of producing the core-shell quantum dots, and a display device including a light emitting element that includes the quantum dot-polymer composite.

公开(公告)号：US11530353B2

公开(公告)日：2022-12-20

申请号：US16914598

申请日：2020-06-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeyeon Yang ,  Garam Park ,  Shin Ae Jun ,  Tae Gon Kim ,  Taekhoon Kim

IPC: C09K11/70 ,  H01L27/32 ,  G02F1/13357 ,  C09K11/08 ,  C09K11/02 ,  B82Y40/00 ,  B82Y20/00

Abstract: A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.

公开(公告)号：US11345851B2

公开(公告)日：2022-05-31

申请号：US17106317

申请日：2020-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taekhoon Kim ,  Seonmyeong Choi ,  Jongmin Lee ,  Tae Gon Kim ,  Young Seok Park ,  Shin Ae Jun

IPC: C09K11/88 ,  G03F7/004 ,  G03F7/032 ,  G03F7/029 ,  H01L27/32 ,  G02F1/13357 ,  C09K11/08 ,  G03F7/40 ,  B82Y20/00 ,  B82Y40/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38

Abstract: A photosensitive composition including a quantum dot; a binder polymer including a carboxylic acid group; a photopolymerizable monomer including a carbon-carbon double bond; and a photoinitiator, a patterned film produced therefrom and a display device including the same. The quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well including a second semiconductor nanocrystal, the quantum well surrounding the seed and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal and not including cadmium, the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, and an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.

公开(公告)号：US10851297B2

公开(公告)日：2020-12-01

申请号：US16507461

申请日：2019-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taekhoon Kim ,  Seonmyeong Choi ,  Jongmin Lee ,  Tae Gon Kim ,  Young Seok Park ,  Shin Ae Jun

IPC: C09K11/88 ,  G03F7/004 ,  G03F7/032 ,  G03F7/029 ,  H01L27/32 ,  G02F1/13357 ,  C09K11/08 ,  G03F7/40 ,  B82Y20/00 ,  B82Y40/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38

Abstract: A photosensitive composition including a quantum dot; a binder polymer including a carboxylic acid group; a photopolymerizable monomer including a carbon-carbon double bond; and a photoinitiator, a patterned film produced therefrom and a display device including the same. The quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well including a second semiconductor nanocrystal, the quantum well surrounding the seed and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal and not including cadmium, the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, and an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.

公开(公告)号：US10808174B2

公开(公告)日：2020-10-20

申请号：US15855436

申请日：2017-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung Display Co., Ltd. ,  SAMSUNG SDI CO., LTD.

Inventor： Young Seok Park ,  Shang Hyeun Park ,  Eun Joo Jang ,  Hyo Sook Jang ,  Shin Ae Jun ,  Dae Young Chung ,  Taekhoon Kim ,  Yuho Won

IPC: C09K11/88 ,  C09K11/02 ,  H01L51/00 ,  G02B5/22 ,  H01L27/32 ,  B82Y40/00 ,  H01L51/50 ,  B82Y30/00

Abstract: A process for preparing a quantum dot of a core-shell structure including obtaining a first mixture including first precursor including a first metal, a ligand compound, and a solvent; adding a second precursor and a particle including a first semiconductor nanocrystal to the first mixture to obtain a second mixture; and heating the second mixture up to a reaction temperature and performing a reaction between the first precursor and the second precursor to form a layer of a shell including a crystalline or amorphous material, during formation of the layer of the shell or after formation of the layer of the shell, wherein the process includes adding an organic solution including an ammonium fluorinated salt including a solid salt having a melting point of greater than or equal to about 110° C. to the second mixture.

公开(公告)号：US12215266B2

公开(公告)日：2025-02-04

申请号：US18354182

申请日：2023-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunki Kim ,  Shin Ae Jun ,  Eun Joo Jang ,  Yongwook Kim ,  Tae Gon Kim ,  Yuho Won ,  Taekhoon Kim ,  Hyo Sook Jang

IPC: C09K11/88 ,  C09K11/02 ,  C09K11/56 ,  C09K11/61 ,  C09K11/70 ,  C09K11/72 ,  H01L29/06 ,  H01L29/22 ,  H01L33/50 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00

Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.