公开(公告)号：US12041802B2

公开(公告)日：2024-07-16

申请号：US18101603

申请日：2023-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A Kim ,  Yuho Won ,  Sung Woo Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

IPC: H10K50/115

CPC classification number: H10K50/115

Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.

公开(公告)号：US11981852B2

公开(公告)日：2024-05-14

申请号：US18113650

申请日：2023-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Sung Woo Kim ,  Jin A Kim ,  Jeong Hee Lee ,  Tae Hyung Kim ,  Eun Joo Jang

IPC: C09K11/88 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/02 ,  H05B33/14 ,  H10K50/115 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17

CPC classification number: C09K11/883 ,  C09K11/02 ,  H05B33/14 ,  H10K50/115 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K50/171 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

公开(公告)号：US11981850B2

公开(公告)日：2024-05-14

申请号：US17991903

申请日：2022-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Yuho Won ,  Eun Joo Jang ,  Heejae Chung ,  Oul Cho

IPC: C09K11/88 ,  C09K11/08 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/883 ,  C09K11/0883 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).

公开(公告)号：US11758746B2

公开(公告)日：2023-09-12

申请号：US17892564

申请日：2022-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sujin Park ,  Yuho Won ,  Eun Joo Jang ,  Dae Young Chung ,  Sung Woo Kim ,  Jin A Kim ,  Yong Seok Han

IPC: H01L51/50 ,  H10K50/115 ,  H10K50/15 ,  H10K85/10 ,  H10K50/16 ,  H10K71/15 ,  H10K102/00

CPC classification number: H10K50/115 ,  H10K50/15 ,  H10K85/115 ,  H10K85/1135 ,  H10K50/16 ,  H10K71/15 ,  H10K2102/331 ,  H10K2102/351

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, hole transport capability per unit area and electron transport capability per unit area of the first quantum dot are greater than hole transport capability per unit area and electron transport capability per unit area of the second quantum dot, respectively.

公开(公告)号：US11713418B2

公开(公告)日：2023-08-01

申请号：US17558774

申请日：2021-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Hwea Yoon Kim ,  Jeong Hee Lee ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: C09K11/88 ,  C09K11/02 ,  C01G9/00 ,  H01L33/50 ,  B82Y20/00 ,  B82Y40/00 ,  H10K50/115 ,  H10K102/00

CPC classification number: C09K11/883 ,  C01G9/006 ,  C09K11/025 ,  H01L33/50 ,  B82Y20/00 ,  B82Y40/00 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2006/60 ,  H10K50/115 ,  H10K2102/00

Abstract: A quantum dot including zinc, tellurium, selenium, and sulfur, wherein the quantum dot comprises a core and a shell disposed on the core, and wherein the quantum dot is a cadmium-free red light-emitting quantum dot and has an emission peak wavelength of greater than or equal to about 600 nanometers (nm), and efficiency of greater than or equal to about 50%.

公开(公告)号：US11316079B2

公开(公告)日：2022-04-26

申请号：US16546439

申请日：2019-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Jihyun Min ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: H01L33/50 ,  C09K11/88 ,  H01L31/0232 ,  H01L31/0384 ,  H01L31/055 ,  H01L21/02 ,  C09K11/02 ,  C09K11/70 ,  H01L31/105 ,  H01L33/08 ,  F21V8/00 ,  G02F1/13357 ,  B82Y20/00 ,  B82Y40/00 ,  H01L33/06 ,  G02F1/1335

Abstract: An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.

公开(公告)号：US10711193B2

公开(公告)日：2020-07-14

申请号：US16205323

申请日：2018-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongwook Kim ,  Sungwoo Hwang ,  Soo Kyung Kwon ,  Yuho Won ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: C09K11/88 ,  C09K11/02 ,  H01L51/50 ,  H01L27/32 ,  B82Y40/00 ,  B82Y20/00 ,  G02F1/133

Abstract: A quantum dot, a method of producing the same, a quantum dot polymer composite including the same, and an electronic device. The quantum dot includes a core including a first semiconductor nanocrystal and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a metal dopant, wherein the first semiconductor nanocrystal includes a Group II-VI compound, a Group III-V compound, or a combination thereof, the second semiconductor nanocrystal includes a Group II-VI compound, and the metal dopant includes hafnium, zirconium, titanium, or a combination thereof.

公开(公告)号：US10559712B2

公开(公告)日：2020-02-11

申请号：US16111848

申请日：2018-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Garam Park ,  Tae Hyung Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Shin Ae Jun ,  Yongwook Kim ,  Taekhoon Kim ,  Jihyun Min ,  Yuho Won

IPC: H01L33/04 ,  C09K11/61 ,  H01L33/28 ,  H01L33/34 ,  C09K11/02 ,  C09K11/70 ,  C09K11/88 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32

Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.

公开(公告)号：US10424695B2

公开(公告)日：2019-09-24

申请号：US15841876

申请日：2017-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Jihyun Min ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: H01L33/50 ,  C09K11/88 ,  H01L31/0232 ,  H01L31/0384 ,  H01L31/105 ,  H01L21/02 ,  C09K11/02 ,  C09K11/70 ,  H01L33/08 ,  F21V8/00 ,  G02F1/1335 ,  B82Y20/00 ,  B82Y40/00 ,  H01L33/06

Abstract: An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.

公开(公告)号：US12060511B2

公开(公告)日：2024-08-13

申请号：US17063821

申请日：2020-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Jeong Hee Lee ,  Eun Joo Jang ,  Ha Il Kwon ,  Sujin Park

IPC: C09K11/08 ,  C09K11/88 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/883 ,  C09K11/0883 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot including a semiconductor nanocrystal core including indium (In) and phosphorus (P) and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the semiconductor nanocrystal shell including zinc (Zn) and selenium (Se), wherein the semiconductor nanocrystal shell is doped with a dopant metal having a larger ion radius than a radius of an Zn2+ ion, the quantum dot does not include cadmium, and the quantum dot has a quantum efficiency of greater than or equal to about 70% and a full width at half maximum (FWHM) of an emission peak of less than or equal to about 40 nanometers (nm), and an electroluminescent device including the same.