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公开(公告)号：US11740495B2
公开(公告)日：2023-08-29
申请号：US16697650
申请日：2019-11-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Gon Kim , Garam Park , Jooyeon Ahn , Shang Hyeun Park , Shin Ae Jun
IPC: G02F1/017 , B82Y20/00 , C09K11/88 , H01L33/06 , H01L33/28 , H01L33/30 , H01L33/34 , C09K11/02 , C09K11/08 , C09K11/62 , H10K50/115
CPC classification number: G02F1/01716 , B82Y20/00 , C09K11/02 , C09K11/025 , C09K11/0811 , C09K11/0883 , C09K11/62 , C09K11/883 , H01L33/06 , H01L33/28 , H01L33/30 , H01L33/34 , H10K50/115 , G02F1/01791
Abstract: A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.
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公开(公告)号：US11236270B2
公开(公告)日：2022-02-01
申请号：US16507406
申请日：2019-07-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Garam Park , Tae Gon Kim , Jooyeon Ahn , Ji-Yeong Kim , Nayoun Won , Shin Ae Jun
IPC: C09K11/88 , C09K11/02 , G02F1/13357 , H01L27/32
Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.
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公开(公告)号：US10723942B2
公开(公告)日：2020-07-28
申请号：US15387107
申请日：2016-12-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Shin Ae Jun , Taekhoon Kim , Garam Park , Yong Seok Han , Eun Joo Jang , Hyo Sook Jang , Tae Won Jeong , Shang Hyeun Park
IPC: C09K11/02 , C09K11/88 , C09K11/70 , C08K3/30 , C08K3/32 , H01L51/50 , G02F1/1335 , G02F1/13357 , B82Y40/00 , B82Y20/00 , B82Y30/00
Abstract: A quantum dot-polymer composite including a polymer matrix; and a plurality of quantum dots dispersed in the polymer matrix, wherein the quantum dot includes a core including a first semiconductor material; and a shell including a second semiconductor material disposed on the core, wherein the quantum dot is cadmium-free, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
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公开(公告)号：US10559712B2
公开(公告)日：2020-02-11
申请号：US16111848
申请日：2018-08-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Garam Park , Tae Hyung Kim , Eun Joo Jang , Hyo Sook Jang , Shin Ae Jun , Yongwook Kim , Taekhoon Kim , Jihyun Min , Yuho Won
IPC: H01L33/04 , C09K11/61 , H01L33/28 , H01L33/34 , C09K11/02 , C09K11/70 , C09K11/88 , H01L33/24 , H01L33/30 , H01L33/32
Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.
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公开(公告)号：US11530353B2
公开(公告)日：2022-12-20
申请号：US16914598
申请日：2020-06-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyeyeon Yang , Garam Park , Shin Ae Jun , Tae Gon Kim , Taekhoon Kim
Abstract: A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.
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Patent Agency Ranking
公开(公告)号：US11505740B2
公开(公告)日：2022-11-22
申请号：US17490552
申请日：2021-09-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho Won , Nayoun Won , Sungwoo Hwang , Eun Joo Jang , Soo Kyung Kwon , Yong Wook Kim , Jihyun Min , Garam Park , Shang Hyeun Park , Hyo Sook Jang , Shin Ae Jun , Yong Seok Han
IPC: H01L51/50 , C09K11/08 , C08L57/10 , G02F1/13357 , H01L27/32 , C09K11/02 , C09K11/56 , C09K11/70 , C09K11/88 , H05B33/14 , B82Y40/00 , B82Y20/00 , G02F1/1335
Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.
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公开(公告)号：US10597580B2
公开(公告)日：2020-03-24
申请号：US15335700
申请日：2016-10-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jihyun Min , Eun Joo Jang , Yongwook Kim , Garam Park
Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+α Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.
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公开(公告)号：US10323179B2
公开(公告)日：2019-06-18
申请号：US15335700
申请日：2016-10-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jihyun Min , Eun Joo Jang , Yongwook Kim , Garam Park
Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+α Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.
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公开(公告)号：US12136687B2
公开(公告)日：2024-11-05
申请号：US17586956
申请日：2022-01-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Garam Park , Shang Hyeun Park , Min Jong Bae , Mi Hye Lim , Deukseok Chung , Shin Ae Jun
Abstract: A quantum dot composite includes a matrix and a plurality of quantum dots dispersed in the matrix, and a color conversion panel and a display panel including the same. The plurality of quantum dots include a metal including indium (In) and zinc and a non-metal including phosphorous (P), selenium, and sulfur, wherein the plurality of quantum dots includes a mole ratio of sulfur to indium of greater than or equal to about 3:1 and less than or equal to about 6:1, and a mole ratio of sulfur to selenium of greater than or equal about 0.69:1 and less than or equal to about 0.89, and a mole ratio of zinc to indium of greater than or equal to about 10:1 and less than or equal to about 12.4:1, and wherein the plurality of the quantum dots are configured to emit red light.
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公开(公告)号：US11845888B2
公开(公告)日：2023-12-19
申请号：US17989035
申请日：2022-11-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho Won , Nayoun Won , Sungwoo Hwang , Eun Joo Jang , Soo Kyung Kwon , Yong Wook Kim , Jihyun Min , Garam Park , Shang Hyeun Park , Hyo Sook Jang , Shin Ae Jun , Yong Seok Han
IPC: C09K11/08 , C08L57/10 , G02F1/13357 , C09K11/02 , C09K11/56 , C09K11/70 , C09K11/88 , H05B33/14 , H10K50/115 , H10K59/38 , B82Y40/00 , B82Y20/00 , G02F1/1335
CPC classification number: C09K11/0883 , C08L57/10 , C09K11/025 , C09K11/565 , C09K11/70 , C09K11/883 , G02F1/133617 , H05B33/14 , H10K50/115 , H10K59/38 , B82Y20/00 , B82Y40/00 , C08L2203/20 , G02F1/133614 , G02F2202/022 , G02F2202/102 , G02F2202/36
Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.
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