中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

20 records (took 0.022 seconds)

    IMAGE SENSOR
    11.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20200286938A1

    公开(公告)日：2020-09-10

    申请号：US16551114

    申请日：2019-08-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Young Gu JIN ,  Yong Hun KWON ,  Young Chan KIM ,  Sae Young KIM ,  Sung Young SEO ,  Moo Sup LIM ,  Tae Sub JUNG ,  Sung Ho CHOI

    IPC: H01L27/146

    Abstract: An image sensor includes a plurality of pixels, at least one of the pixels comprising: a photodiode configured to generate charges in response to light; and a pixel circuit disposed on the substrate, and including a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node, wherein a potential of a boundary region between the storage transistor and the transfer transistor has a first potential when the transfer transistor is in a turned-off state, and has a second potential, lower than the first potential, when the transfer transistor is in a turned-on state.

    IMAGE SENSORS AND DISTANCE MEASURING DEVICES USING THE SAME
    12.
    发明申请
    IMAGE SENSORS AND DISTANCE MEASURING DEVICES USING THE SAME 审中-公开

    公开(公告)号：US20200174133A1

    公开(公告)日：2020-06-04

    申请号：US16427576

    申请日：2019-05-31

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young Gu JIN ,  Young Chan Kim ,  Tae sub Jung ,  Young Hun Kwon ,  Sung Young Seo ,  Moo Sup Lim ,  Sung Ho Choi

    IPC: G01S17/89 ,  H01L27/146 ,  G01S17/08

    Abstract: An image sensor may include a first photo gate and a second photo gate each extending substantially in parallel in a first direction, the first photo gate and the second photo gate isolated from direct contact with each other in a second direction, the second direction substantially orthogonal to the first direction, a first overflow gate between the first photo gate and the second photo gate, the first overflow gate extending in the first direction, a first charge collection region on the first photo gate, a second charge collection region on the second photo gate and isolated from direct contact with the first charge collection region in the second direction, a first floating diffusion region that may receive first charge from the first charge collection region and output the first charge, and a second floating diffusion region that may receive second charge from the second charge collection region and output the second charge.

    IMAGE SENSOR CHIPS
    14.
    发明申请
    IMAGE SENSOR CHIPS 有权
    图像传感器

    公开(公告)号：US20140104473A1

    公开(公告)日：2014-04-17

    申请号：US14051993

    申请日：2013-10-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Tae Chan KIM ,  Min Ho KIM ,  Dong Ki MIN ,  Sang Chul SUL ,  Tae Seok OH ,  Kwang Hyun LEE ,  Tae Yon LEE ,  Jung Hoon JUNG ,  Young Gu JIN

    IPC: H04N5/374

    CPC classification number: H04N5/374 ,  H01L27/14627 ,  H01L27/14634

    Abstract: An image sensor chip includes a first wafer and a second wafer. The first wafer includes an image sensor having a plurality of sub-pixels, each of which is configured to detect at least one photon and output a sub-pixel signal according to a result of the detection. The image processor is configured to process sub-pixel signals for each sub-pixel and generate image data. The first wafer and the second wafer are formed in a wafer stack structure.

    Abstract translation: 图像传感器芯片包括第一晶片和第二晶片。 第一晶片包括具有多个子像素的图像传感器，每个子像素被配置为检测至少一个光子并根据检测结果输出子像素信号。 图像处理器被配置为处理每个子像素的子像素信号并生成图像数据。 第一晶片和第二晶片形成为晶片堆叠结构。

    IMAGE SENSOR
    15.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20230275041A1

    公开(公告)日：2023-08-31

    申请号：US17973702

    申请日：2022-10-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Young Gu JIN ,  Jung Chak AHN ,  Young Sun OH

    IPC: H01L23/60 ,  H01L27/146

    CPC classification number: H01L23/60 ,  H01L27/14645 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683

    Abstract: An image sensor includes a substrate having a first surface and a second surface opposing to the first surface, first pixel separation patterns defining a plurality of unit pixels, which include photoelectric conversion regions in the substrate, each of the first pixel separation patterns including a first conductive film and a second conductive film on the first conductive film, and microlenses on the second surface of the substrate, wherein the first conductive film extends along sidewalls of the second conductive film to separate the second conductive film from the substrate, the first conductive film has a greater reflectance than the second conductive film for a predetermined wavelength range, and the second conductive film has a greater step coverage than the first conductive film.

    IMAGE SENSOR AND IMAGE SENSING DEVICE
    16.
    发明申请
    IMAGE SENSOR AND IMAGE SENSING DEVICE 有权

    公开(公告)号：US20220150430A1

    公开(公告)日：2022-05-12

    申请号：US17366868

    申请日：2021-07-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dae Shik KIM ,  Young Gu JIN

    IPC: H04N5/378 ,  H04N5/341 ,  H01L27/146 ,  H04N5/374

    Abstract: An image sensor comprises an upper chip including pixels; and a lower chip placed below the upper chip, wherein a pixel of the pixels includes an optical conversion element configured that light is incident on the optical conversion element, a first storage gate or a first storage node which is electrically connected to the optical conversion element and configured to store electric charge transferred from the optical conversion element during a first time interval, and a second storage gate or a second storage node which is electrically connected to the optical conversion element and configured to store the electric charge transferred from the optical conversion element during a second time interval different from the first time interval, the pixel is configured to generate a first pixel signal on the basis of the electric charge stored in the first storage gate, the lower chip includes a frame buffer.

    IMAGE SENSORS WITH MULTIPLE LENSES PER PIXEL REGION
    17.
    发明申请
    IMAGE SENSORS WITH MULTIPLE LENSES PER PIXEL REGION 审中-公开

    公开(公告)号：US20190296070A1

    公开(公告)日：2019-09-26

    申请号：US16206118

    申请日：2018-11-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young Gu JIN ,  Young Chan KIM ,  Min-Sun KEEL

    IPC: H01L27/146 ,  H04N13/254

    Abstract: Image sensors are provided. An image sensor includes a substrate that includes a pixel region, a first surface, and a second surface that is opposite the first surface. The image sensor includes first and second photogates that are on the first surface and are configured to generate electric charge responsive to incident light in the pixel region. Moreover, the image sensor includes first and second lenses that are on the second surface and are configured to pass the incident light toward the first and second photogates.

    SEMICONDUCTOR DEVICES
    18.
    发明申请
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20180069046A1

    公开(公告)日：2018-03-08

    申请号：US15450451

    申请日：2017-03-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young Gu JIN ,  Doo Won Kwon

    IPC: H01L27/146 ,  H04N5/33 ,  H04N9/04

    CPC classification number: H01L27/14647 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14652 ,  H04N5/332 ,  H04N9/04

    Abstract: A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.

Patent Agency Ranking