中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

24 records (took 0.025 seconds)

    Memory device
    13.
    发明授权
    Memory device 有权

    公开(公告)号：US10546894B2

    公开(公告)日：2020-01-28

    申请号：US16226855

    申请日：2018-12-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Zhe Wu ,  Dong-ho Ahn ,  Hideki Horii ,  Soon-oh Park ,  Jeong-hee Park ,  Jin-woo Lee ,  Dong-jun Seong ,  Seol Choi

    IPC: H01L27/24 ,  H01L45/00

    Abstract: A memory device includes a plurality of word lines extending along a first direction and spaced apart from each other along a second direction that is perpendicular to the first direction; a plurality of bit lines extending along the second direction and spaced apart from each other in the first direction, the plurality of bit lines being spaced apart from the plurality of word lines in a third direction that is perpendicular to both the first and second directions; and a plurality of memory cells being respectively arranged between the corresponding word and bit lines. Each of the memory cells includes a selection device layer, and a variable resistance layer, wherein the selection device layer includes a chalcogenide switching material having a composition according to a particular chemical formula.

    Semiconductor device
    14.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11581367B2

    公开(公告)日：2023-02-14

    申请号：US17209660

    申请日：2021-03-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dongho Ahn ,  Segab Kwon ,  Chungman Kim ,  Kwangmin Park ,  Zhe Wu ,  Seunggeun Yu ,  Wonjun Lee ,  Jabin Lee ,  Jinwoo Lee

    IPC: H01L27/24 ,  H01L45/00

    Abstract: A semiconductor device includes a semiconductor substrate, a peripheral device on the semiconductor substrate, a lower insulating structure on the semiconductor substrate and covering the peripheral device, a first conductive line on the lower insulating structure, a memory cell structure on the first conductive line, and a second conductive line on the memory cell structure. The memory cell structure may include an information storage material pattern and a selector material pattern on the lower insulating structure in a vertical direction. The selector material pattern may include a first selector material layer including a first material and a second selector material layer including a second material. The second selector material layer may have a threshold voltage drift higher than that of the first material. The second selector material layer may have a second width narrower than a first width of the first selector material layer.

    Memory devices
    15.
    发明授权
    Memory devices 有权

    公开(公告)号：US11205682B2

    公开(公告)日：2021-12-21

    申请号：US16446812

    申请日：2019-06-20

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Zhe Wu ,  Ja-bin Lee ,  Jin-woo Lee ,  Kyu-bong Jung

    IPC: H01L45/00 ,  H01L27/24

    Abstract: A memory device includes first conductive lines extending in a first direction, second conductive lines extending in a second direction, and a plurality of memory cells each arranged between the first and second conductive lines and each including a variable resistance memory layer and a switch material pattern. The switch material pattern includes an element injection area arranged in an outer area of the switch material pattern, and an internal area covered by the element injection area. The internal area contains a first content of at least one element from arsenic (As), sulfur (S), selenium (Se), and tellurium (Te), the element injection area contains a second content of the at least one element from As, S, Se, and Te, and the second content has a profile in which a content of the at least one element decreases away from the at least one surface of the switch material pattern.

    MEMORY DEVICE
    16.
    发明申请
    MEMORY DEVICE 审中-公开

    公开(公告)号：US20190148456A1

    公开(公告)日：2019-05-16

    申请号：US16226855

    申请日：2018-12-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Zhe Wu ,  Dong-ho Ahn ,  Hideki Horii ,  Soon-oh Park ,  Jeong-hee Park ,  Jin-woo Lee ,  Dong-jun Seong ,  Seol Choi

    IPC: H01L27/24 ,  H01L45/00

    CPC classification number: H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1675

    Abstract: A memory device includes a plurality of word lines extending along a first direction and spaced apart from each other along a second direction that is perpendicular to the first direction; a plurality of bit lines extending along the second direction and spaced apart from each other in the first direction, the plurality of bit lines being spaced apart from the plurality of word lines in a third direction that is perpendicular to both the first and second directions; and a plurality of memory cells being respectively arranged between the corresponding word and bit lines. Each of the memory cells includes a selection device layer, and a variable resistance layer, wherein the selection device layer includes a chalcogenide switching material having a composition according to a particular chemical formula.

    Method of manufacturing a phase change memory device
    19.
    发明授权
    Method of manufacturing a phase change memory device 有权
    相变存储器件的制造方法

    公开(公告)号：US09318700B2

    公开(公告)日：2016-04-19

    申请号：US14740929

    申请日：2015-06-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Zhe Wu ,  Jeong-Hee Park ,  Dong-Ho Ahn ,  Jung-Hwan Park ,  Jun-Ku Ahn ,  Sung-Lae Cho ,  Hideki Horii

    IPC: H01L21/20 ,  H01L45/00

    CPC classification number: H01L45/06 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1666 ,  H01L45/1683

    Abstract: In a method of manufacturing a phase change memory device, an insulating interlayer having a through opening is formed on a substrate, at least one conformal phase change material layer pattern is formed along the sides of the opening, and a plug-like phase change material pattern having a composition different from that of each conformal phase change material layer pattern is formed on the at least one conformal phase change material layer pattern as occupying a remaining portion of the opening. Energy is applied to the phase change material layer patterns to form a mixed phase change material layer pattern including elements from the conformal and plug-like phase change material layer patterns.

    Abstract translation: 在相变存储装置的制造方法中，在基板上形成具有通孔的绝缘中间层，沿开口侧形成至少一个共形相变材料层图案，并且形成插塞状相变材料 具有不同于每个共形相变材料层图案的组成的图案形成在占据开口的剩余部分的至少一个共形相变材料层图案上。 将能量施加到相变材料层图案以形成包括来自保形和插塞状相变材料层图案的元件的混合相变材料层图案。

Patent Agency Ranking