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11.发明授权公开(公告)号：US11099410B2
公开(公告)日：2021-08-24
申请号：US15849994
申请日：2017-12-21
Inventor： Deukseok Chung , Shin Ae Jun , Tae Won Jeong , Yong Seok Han
IPC: G02F1/017 , G02F1/1362 , G02F1/1335 , G02F1/13357 , G03F7/00 , G03F7/033 , G03F7/004 , C09K11/62 , C09K11/70 , C09K11/02 , B32B37/06 , H01L31/0352
Abstract: A layered structure including a transparent substrate; a photoluminescent layer disposed on the transparent substrate and a pattern of a quantum dot polymer composite; and a capping layer disposed on the photoluminescent layer and including an inorganic material, a method of producing the same, a liquid crystal display including the same. The quantum dot polymer composite includes a polymer matrix; and a plurality of quantum dots in the polymer matrix, the pattern of the quantum dot polymer composite includes at least one repeating section and the repeating section includes a first section configured to emit light of a first peak wavelength, the inorganic material is disposed on at least a portion of a surface of the repeating section, and the inorganic material includes a metal oxide, a metal nitride, a metal oxynitride, a metal sulfide, or a combination thereof.
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公开(公告)号：US10990006B2
公开(公告)日：2021-04-27
申请号：US15375601
申请日：2016-12-12
Applicant: SAMSUNG ELECTRONICS CO., LTD. , SAMSUNG SDI CO., LTD.
Inventor： Shang Hyeun Park , Hojeong Paek , Jonggi Kim , Nayoun Won , Shin Ae Jun
Abstract: A photosensitive composition including: a plurality of quantum dots, wherein the quantum dot includes an organic ligand bound to a surface of the quantum dot; a photoinitiator; a binder including a carboxylic acid group; a photopolymerizable monomer having a carbon-carbon double bond; and a solvent, wherein the photoinitiator includes a first photoinitiator including an oxime compound and a second photoinitiator including at least one selected from a phosphine oxide compound and an amino ketone compound.
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13.发明授权公开(公告)号：US10983432B2
公开(公告)日：2021-04-20
申请号：US15241208
申请日：2016-08-19
Applicant: SAMSUNG ELECTRONICS CO., LTD. , Samsung SDI Co., Ltd.
Inventor： Shin Ae Jun , Shang Hyeun Park , Hojeong Paek , Jonggi Kim , Hyeyeon Yang , Eun Joo Jang , Yong Seok Han
Abstract: A photosensitive composition including a quantum dot dispersion, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes an acid group-containing polymer and a plurality of quantum dots dispersed in the acid group-containing polymer, and wherein the acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group or a phosphonic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic group and not having a carboxylic acid group and a phosphonic acid group.
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公开(公告)号：US10950741B2
公开(公告)日：2021-03-16
申请号：US16234694
申请日：2018-12-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Shin Ae Jun , Eun Joo Jang , Soo Kyung Kwon , Taek Hoon Kim , Won Joo Lee
IPC: H01L31/0296 , H01L31/0304 , H01L31/0352 , B82Y40/00 , B82Y30/00
Abstract: A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0≤x≤1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.
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公开(公告)号：US10851297B2
公开(公告)日：2020-12-01
申请号：US16507461
申请日：2019-07-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Taekhoon Kim , Seonmyeong Choi , Jongmin Lee , Tae Gon Kim , Young Seok Park , Shin Ae Jun
IPC: C09K11/88 , G03F7/004 , G03F7/032 , G03F7/029 , H01L27/32 , G02F1/13357 , C09K11/08 , G03F7/40 , B82Y20/00 , B82Y40/00 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/38
Abstract: A photosensitive composition including a quantum dot; a binder polymer including a carboxylic acid group; a photopolymerizable monomer including a carbon-carbon double bond; and a photoinitiator, a patterned film produced therefrom and a display device including the same. The quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well including a second semiconductor nanocrystal, the quantum well surrounding the seed and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal and not including cadmium, the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, and an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.
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Patent Agency Ranking
公开(公告)号：US10808174B2
公开(公告)日：2020-10-20
申请号：US15855436
申请日：2017-12-27
Inventor： Young Seok Park , Shang Hyeun Park , Eun Joo Jang , Hyo Sook Jang , Shin Ae Jun , Dae Young Chung , Taekhoon Kim , Yuho Won
Abstract: A process for preparing a quantum dot of a core-shell structure including obtaining a first mixture including first precursor including a first metal, a ligand compound, and a solvent; adding a second precursor and a particle including a first semiconductor nanocrystal to the first mixture to obtain a second mixture; and heating the second mixture up to a reaction temperature and performing a reaction between the first precursor and the second precursor to form a layer of a shell including a crystalline or amorphous material, during formation of the layer of the shell or after formation of the layer of the shell, wherein the process includes adding an organic solution including an ammonium fluorinated salt including a solid salt having a melting point of greater than or equal to about 110° C. to the second mixture.
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公开(公告)号：US10739634B2
公开(公告)日：2020-08-11
申请号：US15670399
申请日：2017-08-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyun A Kang , Eun Joo Jang , Hyo Sook Jang , Shin Ae Jun
IPC: G02F1/1335 , C09D123/08 , C09K11/02 , G02F1/13357 , C09K11/56 , C09K11/70 , C09K11/88 , C08K9/08
Abstract: A backlight unit for a liquid crystal display device, the backlight unit including: an light emitting diode (“LED”) light source; a light conversion layer disposed separate from the LED light source to convert light emitted from the LED light source to white light and to provide the white light to the liquid crystal panel; and a light guide panel disposed between the LED light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, and wherein the polymer matrix includes a first polymerized polymer of a first monomer including at least two thiol (—SH) groups, each located at a terminal end of the first monomer, and a second monomer including at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer.
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公开(公告)号：US10717649B2
公开(公告)日：2020-07-21
申请号：US16117394
申请日：2018-08-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyo Sook Jang , Shin Ae Jun , Eun Joo Jang
Abstract: A process of synthesizing Ga—Se nanocrystals is provided, the process including: contacting a first precursor containing gallium with a second precursor containing selenium to obtain a Ga—Se single precursor; and reacting the Ga—Se single precursor in a solvent in the presence of a ligand compound, and optionally with a third precursor including an element (A) other than gallium and selenium, to prepare a Ga—Se nanocrystal represented by Chemical Formula 1: GaSexAy [Chemical Formula 1] wherein x is about 1.1 to 3, and y is about 0.1 to 4.
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公开(公告)号：US20190023571A1
公开(公告)日：2019-01-24
申请号：US16117394
申请日：2018-08-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyo Sook JANG , Shin Ae Jun , Eun Joo Jang
Abstract: A process of synthesizing Ga—Se nanocrystals is provided, the process including: contacting a first precursor containing gallium with a second precursor containing selenium to obtain a Ga—Se single precursor; and reacting the Ga—Se single precursor in a solvent in the presence of a ligand compound, and optionally with a third precursor including an element (A) other than gallium and selenium, to prepare a Ga—Se nanocrystal represented by Chemical Formula 1: GaSexAy [Chemical Formula 1] wherein x is about 1.1 to 3, and y is about 0.1 to 4.
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公开(公告)号：US09902902B2
公开(公告)日：2018-02-27
申请号：US15331427
申请日：2016-10-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eun Joo Jang , Mi Yang Kim , Hyung Kun Kim , Shin Ae Jun , Yong Wan Jin , Seong Jae Choi
IPC: H01L33/50 , C09K11/02 , B82Y10/00 , C09K11/56 , C09K11/88 , H01L29/12 , H01L33/06 , H01L33/56 , B82Y20/00 , B82Y40/00
CPC classification number: C09K11/025 , B82Y10/00 , B82Y20/00 , B82Y40/00 , C09K11/02 , C09K11/565 , C09K11/883 , H01L29/127 , H01L33/06 , H01L33/502 , H01L33/507 , H01L33/56 , Y10S977/774 , Y10S977/892 , Y10S977/95
Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.
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