公开(公告)号：US20120164347A1

公开(公告)日：2012-06-28

申请号：US13331737

申请日：2011-12-20

申请人： Do Young RHEE ,  Jin Young Lim ,  Sang Heon Han ,  Ki Sung Kim ,  Young Sun Kim ,  Sung Tae Kim

发明人： Do Young RHEE ,  Jin Young Lim ,  Sang Heon Han ,  Ki Sung Kim ,  Young Sun Kim ,  Sung Tae Kim

IPC分类号： C23C16/458 ,  C08J7/18 ,  B05C13/02

CPC分类号： H01L21/68757 ,  H01L21/68771

摘要： Provided are a susceptor for a chemical vapor deposition (CVD) apparatus, including: a susceptor body having an upper surface opposed to a lower surface thereof and formed of a light transmitting material, the upper surface thereof having at least one pocket part formed to receive a substrate therein; and a light absorbing unit formed of a light absorbing material on the upper surface of the susceptor body.

摘要翻译： 提供一种用于化学气相沉积（CVD）设备的感受体，包括：基座主体，其具有与其下表面相对的上表面并由透光材料形成，其上表面具有形成为接收的至少一个凹部 其中的基板; 以及由感光体的上表面上的吸光材料形成的光吸收单元。

公开(公告)号：US20140224176A1

公开(公告)日：2014-08-14

申请号：US14124190

申请日：2011-08-09

申请人： Do Young Rhee ,  Young Sun Kim ,  Sung Tae Kim ,  Sang Heon Han ,  Ki Sung Kim

发明人： Do Young Rhee ,  Young Sun Kim ,  Sung Tae Kim ,  Sang Heon Han ,  Ki Sung Kim

IPC分类号： C30B25/08 ,  C30B25/12

CPC分类号： C30B25/08 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45508 ,  C23C16/4584 ,  C30B25/12 ,  C30B25/14

摘要： A metal-organic chemical vapor deposition (MOCVD) apparatus includes: a reaction chamber including a chamber main body forming an interior space having a certain volume and a chamber cover hermetically sealing the chamber main body to maintain air-tightness; a susceptor rotatably provided within the chamber main body and having one or more accommodation portions formed in an upper surface thereto to accommodate wafers; a cover member detachably provided on an interior surface of the chamber cover, forming a reaction space between the cover member and the susceptor, and formed by coupling a plurality of section members; and a gas supply unit supplying a reactive gas to the reaction space to allow the reactive gas to flow between the susceptor and the cover member.

摘要翻译： 金属有机化学气相沉积（MOCVD）装置包括：反应室，包括形成具有一定体积的内部空间的室主体和密封室主体以保持气密性的室盖; 感受器，其可旋转地设置在所述室主体内并且具有形成在其上表面中的一个或多个容纳部分以容纳晶片; 盖构件，其可拆卸地设置在所述室盖的内表面上，在所述盖构件和所述基座之间形成反作用空间，并且通过联接多个区段构件而形成; 以及气体供应单元，其向所述反应空间供应反应性气体，以允许所述反应性气体在所述基座和所述盖构件之间流动。

公开(公告)号：US08779412B2

公开(公告)日：2014-07-15

申请号：US13553344

申请日：2012-07-19

申请人： Sang Heon Han ,  Do Young Rhee ,  Jong Hyun Lee ,  Jin Young Lim ,  Young Sun Kim

发明人： Sang Heon Han ,  Do Young Rhee ,  Jong Hyun Lee ,  Jin Young Lim ,  Young Sun Kim

IPC分类号： H01L33/00 ,  H01L29/06

CPC分类号： H01L33/06 ,  H01L33/32

摘要： There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.

摘要翻译： 提供一种半导体发光器件，包括：第一和第二导电类型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有多个量子势垒层和多个量子阱层交替设置的结构的有源层，其中多个量子阱层中的至少一个包括 带隙能量通过第一斜率​​减小的第一区域和通过不同于第一斜率的第二斜率使带隙能量减小的第二区域。 通过调整量子阱层的带隙的形状，极化的影响被最小化，可以提高结晶度和内部量子效率。

公开(公告)号：US07192884B2

公开(公告)日：2007-03-20

申请号：US10689629

申请日：2003-10-22

申请人： Dong Joon Kim ,  Byung Deuk Moon ,  Sang Heon Han

发明人： Dong Joon Kim ,  Byung Deuk Moon ,  Sang Heon Han

IPC分类号： H01L21/302

CPC分类号： H01S5/0421 ,  H01S5/2081 ,  H01S5/2206 ,  H01S5/2231 ,  H01S2304/00

摘要： Disclosed is a method for manufacturing a semiconductor laser device, comprising the steps of: (a) forming a first conductive-type clad layer, an active layer, and a second conductive-type clad layer on a first conductive-type semiconductor substrate; (b) forming a ridge structure by selectively etching the second conductive-type clad layer; (c) forming a current blocking layer around the ridge structure, the current blocking layer having protrusions on the upper surface thereof adjacent to the ridge structure, and an amorphous and/or polycrystalline layer on a partial area thereof; and (d) removing at least the amorphous and/or polycrystalline layer from the current blocking layer, and wet-etching the upper surface of the current blocking layer so that the protrusions are reduced in size.

摘要翻译： 本发明公开了一种半导体激光器件的制造方法，包括以下步骤：（a）在第一导电型半导体衬底上形成第一导电型覆盖层，有源层和第二导电型覆盖层; （b）通过选择性地蚀刻第二导电型覆盖层形成脊结构; （c）在所述脊结构周围形成电流阻挡层，所述电流阻挡层在其与所述脊结构相邻的上表面上具有突起，以及在其部分区域上的非晶和/或多晶层; 和（d）从电流阻挡层中去除至少非晶和/或多晶层，并且湿蚀刻电流阻挡层的上表面，使得突起的尺寸减小。

公开(公告)号：US07393710B2

公开(公告)日：2008-07-01

申请号：US11247935

申请日：2005-10-11

申请人： Jin Chul Kim ,  Su Yeol Lee ,  Chang Zoo Kim ,  Sang Heon Han ,  Keun Man Song ,  Tae Jun Kim ,  Seok Beom Choi

发明人： Jin Chul Kim ,  Su Yeol Lee ,  Chang Zoo Kim ,  Sang Heon Han ,  Keun Man Song ,  Tae Jun Kim ,  Seok Beom Choi

IPC分类号： H01L21/00

CPC分类号： H01S5/4031 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01S5/2231 ,  H01S5/4087 ,  H01S2304/04

摘要： The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.

摘要翻译： 本发明涉及一种双波长半导体激光器件，更具体地涉及一种多波长半导体激光器件的制造方法。 在该方法中，提供了具有分隔成至少第一和第二区域的上表面的基板。 然后，形成基板上的第一电介质掩模，仅露出第一区域。 然后，在衬底的第一区域上生长用于第一半导体激光器的外延层。 然后，形成基板上的第二电介质掩模，仅露出第二区域。 然后，在衬底的第二区域上生长用于第二半导体激光器的外延层。