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    METHOD OF MANUFACTURING LIGHT EMITTING DIODE
    2.
    发明申请
    METHOD OF MANUFACTURING LIGHT EMITTING DIODE 审中-公开
    制造发光二极管的方法

    公开(公告)号：US20120160157A1

    公开(公告)日：2012-06-28

    申请号：US13208639

    申请日：2011-08-12

    申请人： Sang Heon HAN ,  Do Young Rhee ,  Jin Young Lim ,  Ki Sung Kim ,  Young Sun Kim

    发明人： Sang Heon HAN ,  Do Young Rhee ,  Jin Young Lim ,  Ki Sung Kim ,  Young Sun Kim

    IPC分类号： C30B25/02 ,  C30B25/08

    CPC分类号： H01L33/007 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/325

    摘要： There is provided a method of manufacturing a light emitting diode, the method including: growing a first conductivity type nitride semiconductor layer and an active layer on a substrate in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the active layer grown thereon to a second reaction chamber; and growing a second conductivity type nitride semiconductor layer on the active layer in the second reaction chamber, wherein an atmosphere including a nitride source gas and a dopant source gas supplying a dopant to be included in the second conductivity type nitride semiconductor layer is created in an interior of the second reaction chamber prior to the transferring of the substrate to the second reaction chamber. This method improves a system's operational capability and productivity. In addition, the crystallinity and doping uniformity of semiconductor layers obtained by this method may be improved.

    摘要翻译： 提供一种制造发光二极管的方法，该方法包括：在第一反应室中在衬底上生长第一导电型氮化物半导体层和有源层; 将具有第一导电型氮化物半导体层的基板和其上生长的活性层转移到第二反应室; 以及在所述第二反应室中的所述有源层上生长第二导电型氮化物半导体层，其中在所述第二导电型氮化物半导体层中产生包含氮化物源气体和供给掺杂剂的掺杂剂源气体的气氛 在将基板转移到第二反应室之前，第二反应室的内部。 该方法提高了系统的运行能力和生产率。 此外，可以提高通过该方法获得的半导体层的结晶度和掺杂均匀性。

    Semiconductor light emitting device
    3.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08779412B2

    公开(公告)日：2014-07-15

    申请号：US13553344

    申请日：2012-07-19

    申请人： Sang Heon Han ,  Do Young Rhee ,  Jong Hyun Lee ,  Jin Young Lim ,  Young Sun Kim

    发明人： Sang Heon Han ,  Do Young Rhee ,  Jong Hyun Lee ,  Jin Young Lim ,  Young Sun Kim

    IPC分类号： H01L33/00 ,  H01L29/06

    CPC分类号： H01L33/06 ,  H01L33/32

    摘要： There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.

    摘要翻译： 提供一种半导体发光器件，包括：第一和第二导电类型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有多个量子势垒层和多个量子阱层交替设置的结构的有源层，其中多个量子阱层中的至少一个包括 带隙能量通过第一斜率​​减小的第一区域和通过不同于第一斜率的第二斜率使带隙能量减小的第二区域。 通过调整量子阱层的带隙的形状，极化的影响被最小化，可以提高结晶度和内部量子效率。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    4.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20130020553A1

    公开(公告)日：2013-01-24

    申请号：US13553344

    申请日：2012-07-19

    申请人： Sang Heon Han ,  Do Young Rhee ,  Jong Hyun Lee ,  Jin Young Lim ,  Young Sun Kim

    发明人： Sang Heon Han ,  Do Young Rhee ,  Jong Hyun Lee ,  Jin Young Lim ,  Young Sun Kim

    IPC分类号： H01L33/04

    CPC分类号： H01L33/06 ,  H01L33/32

    摘要： There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.

    摘要翻译： 提供一种半导体发光器件，包括：第一和第二导电类型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有多个量子势垒层和多个量子阱层交替设置的结构的有源层，其中多个量子阱层中的至少一个包括 带隙能量通过第一斜率​​减小的第一区域和通过不同于第一斜率的第二斜率使带隙能量减小的第二区域。 通过调整量子阱层的带隙的形状，极化的影响被最小化，可以提高结晶度和内部量子效率。

    Semiconductor light emitting device and fabrication method thereof
    6.
    发明授权
    Semiconductor light emitting device and fabrication method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号：US08575593B2

    公开(公告)日：2013-11-05

    申请号：US13557915

    申请日：2012-07-25

    申请人： Sang Heon Han ,  Jong Hyun Lee ,  Jin Young Lim ,  Dong Ju Lee ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

    发明人： Sang Heon Han ,  Jong Hyun Lee ,  Jin Young Lim ,  Dong Ju Lee ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

    IPC分类号： H01L33/32

    CPC分类号： H01L33/06 ,  H01L33/32

    摘要： A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.

    摘要翻译： 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括：第一和第二导电型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有其中交替地设置量子势垒层和量子阱层的结构的有源层，并且量子势垒层包括按照接近于...的顺序设置的第一和第二区域 第一导电型半导体层。