公开(公告)号：US20120164347A1

公开(公告)日：2012-06-28

申请号：US13331737

申请日：2011-12-20

申请人： Do Young RHEE ,  Jin Young Lim ,  Sang Heon Han ,  Ki Sung Kim ,  Young Sun Kim ,  Sung Tae Kim

发明人： Do Young RHEE ,  Jin Young Lim ,  Sang Heon Han ,  Ki Sung Kim ,  Young Sun Kim ,  Sung Tae Kim

IPC分类号： C23C16/458 ,  C08J7/18 ,  B05C13/02

CPC分类号： H01L21/68757 ,  H01L21/68771

摘要： Provided are a susceptor for a chemical vapor deposition (CVD) apparatus, including: a susceptor body having an upper surface opposed to a lower surface thereof and formed of a light transmitting material, the upper surface thereof having at least one pocket part formed to receive a substrate therein; and a light absorbing unit formed of a light absorbing material on the upper surface of the susceptor body.

摘要翻译： 提供一种用于化学气相沉积（CVD）设备的感受体，包括：基座主体，其具有与其下表面相对的上表面并由透光材料形成，其上表面具有形成为接收的至少一个凹部 其中的基板; 以及由感光体的上表面上的吸光材料形成的光吸收单元。

公开(公告)号：US20120160157A1

公开(公告)日：2012-06-28

申请号：US13208639

申请日：2011-08-12

申请人： Sang Heon HAN ,  Do Young Rhee ,  Jin Young Lim ,  Ki Sung Kim ,  Young Sun Kim

发明人： Sang Heon HAN ,  Do Young Rhee ,  Jin Young Lim ,  Ki Sung Kim ,  Young Sun Kim

IPC分类号： C30B25/02 ,  C30B25/08

CPC分类号： H01L33/007 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/325

摘要： There is provided a method of manufacturing a light emitting diode, the method including: growing a first conductivity type nitride semiconductor layer and an active layer on a substrate in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the active layer grown thereon to a second reaction chamber; and growing a second conductivity type nitride semiconductor layer on the active layer in the second reaction chamber, wherein an atmosphere including a nitride source gas and a dopant source gas supplying a dopant to be included in the second conductivity type nitride semiconductor layer is created in an interior of the second reaction chamber prior to the transferring of the substrate to the second reaction chamber. This method improves a system's operational capability and productivity. In addition, the crystallinity and doping uniformity of semiconductor layers obtained by this method may be improved.

摘要翻译： 提供一种制造发光二极管的方法，该方法包括：在第一反应室中在衬底上生长第一导电型氮化物半导体层和有源层; 将具有第一导电型氮化物半导体层的基板和其上生长的活性层转移到第二反应室; 以及在所述第二反应室中的所述有源层上生长第二导电型氮化物半导体层，其中在所述第二导电型氮化物半导体层中产生包含氮化物源气体和供给掺杂剂的掺杂剂源气体的气氛 在将基板转移到第二反应室之前，第二反应室的内部。 该方法提高了系统的运行能力和生产率。 此外，可以提高通过该方法获得的半导体层的结晶度和掺杂均匀性。

公开(公告)号：US20140224176A1

公开(公告)日：2014-08-14

申请号：US14124190

申请日：2011-08-09

申请人： Do Young Rhee ,  Young Sun Kim ,  Sung Tae Kim ,  Sang Heon Han ,  Ki Sung Kim

发明人： Do Young Rhee ,  Young Sun Kim ,  Sung Tae Kim ,  Sang Heon Han ,  Ki Sung Kim

IPC分类号： C30B25/08 ,  C30B25/12

CPC分类号： C30B25/08 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45508 ,  C23C16/4584 ,  C30B25/12 ,  C30B25/14

摘要： A metal-organic chemical vapor deposition (MOCVD) apparatus includes: a reaction chamber including a chamber main body forming an interior space having a certain volume and a chamber cover hermetically sealing the chamber main body to maintain air-tightness; a susceptor rotatably provided within the chamber main body and having one or more accommodation portions formed in an upper surface thereto to accommodate wafers; a cover member detachably provided on an interior surface of the chamber cover, forming a reaction space between the cover member and the susceptor, and formed by coupling a plurality of section members; and a gas supply unit supplying a reactive gas to the reaction space to allow the reactive gas to flow between the susceptor and the cover member.

摘要翻译： 金属有机化学气相沉积（MOCVD）装置包括：反应室，包括形成具有一定体积的内部空间的室主体和密封室主体以保持气密性的室盖; 感受器，其可旋转地设置在所述室主体内并且具有形成在其上表面中的一个或多个容纳部分以容纳晶片; 盖构件，其可拆卸地设置在所述室盖的内表面上，在所述盖构件和所述基座之间形成反作用空间，并且通过联接多个区段构件而形成; 以及气体供应单元，其向所述反应空间供应反应性气体，以允许所述反应性气体在所述基座和所述盖构件之间流动。

公开(公告)号：US20130020553A1

公开(公告)日：2013-01-24

申请号：US13553344

申请日：2012-07-19

申请人： Sang Heon Han ,  Do Young Rhee ,  Jong Hyun Lee ,  Jin Young Lim ,  Young Sun Kim

发明人： Sang Heon Han ,  Do Young Rhee ,  Jong Hyun Lee ,  Jin Young Lim ,  Young Sun Kim

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/32

摘要： There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.

摘要翻译： 提供一种半导体发光器件，包括：第一和第二导电类型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有多个量子势垒层和多个量子阱层交替设置的结构的有源层，其中多个量子阱层中的至少一个包括 带隙能量通过第一斜率​​减小的第一区域和通过不同于第一斜率的第二斜率使带隙能量减小的第二区域。 通过调整量子阱层的带隙的形状，极化的影响被最小化，可以提高结晶度和内部量子效率。

公开(公告)号：US08779412B2

公开(公告)日：2014-07-15

申请号：US13553344

申请日：2012-07-19

申请人： Sang Heon Han ,  Do Young Rhee ,  Jong Hyun Lee ,  Jin Young Lim ,  Young Sun Kim

发明人： Sang Heon Han ,  Do Young Rhee ,  Jong Hyun Lee ,  Jin Young Lim ,  Young Sun Kim

IPC分类号： H01L33/00 ,  H01L29/06

CPC分类号： H01L33/06 ,  H01L33/32

摘要： There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.

摘要翻译： 提供一种半导体发光器件，包括：第一和第二导电类型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有多个量子势垒层和多个量子阱层交替设置的结构的有源层，其中多个量子阱层中的至少一个包括 带隙能量通过第一斜率​​减小的第一区域和通过不同于第一斜率的第二斜率使带隙能量减小的第二区域。 通过调整量子阱层的带隙的形状，极化的影响被最小化，可以提高结晶度和内部量子效率。

公开(公告)号：US20130026446A1

公开(公告)日：2013-01-31

申请号：US13557915

申请日：2012-07-25

申请人： Sang Heon HAN ,  Jong Hyun Lee ,  Jin Young Lim ,  Dong Ju Lee ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

发明人： Sang Heon HAN ,  Jong Hyun Lee ,  Jin Young Lim ,  Dong Ju Lee ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

IPC分类号： H01L33/04 ,  H01L33/60

CPC分类号： H01L33/06 ,  H01L33/32

摘要： A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.

摘要翻译： 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括：第一和第二导电型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有其中交替地设置量子势垒层和量子阱层的结构的有源层，并且量子势垒层包括按照接近于...的顺序设置的第一和第二区域 第一导电型半导体层。

公开(公告)号：US08575593B2

公开(公告)日：2013-11-05

申请号：US13557915

申请日：2012-07-25

申请人： Sang Heon Han ,  Jong Hyun Lee ,  Jin Young Lim ,  Dong Ju Lee ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

发明人： Sang Heon Han ,  Jong Hyun Lee ,  Jin Young Lim ,  Dong Ju Lee ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

IPC分类号： H01L33/32

CPC分类号： H01L33/06 ,  H01L33/32

摘要： A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.

摘要翻译： 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括：第一和第二导电型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有其中交替地设置量子势垒层和量子阱层的结构的有源层，并且量子势垒层包括按照接近于...的顺序设置的第一和第二区域 第一导电型半导体层。

公开(公告)号：US20120326121A1

公开(公告)日：2012-12-27

申请号：US13603192

申请日：2012-09-04

申请人： Dong Ju LEE ,  Hyun Wook Shim ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

发明人： Dong Ju LEE ,  Hyun Wook Shim ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

IPC分类号： H01L33/04

CPC分类号： C23C16/54 ,  C23C16/45563 ,  C30B23/02 ,  C30B25/14 ,  C30B29/40 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards.When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.

摘要翻译： 提供了蒸镀系统，制造发光器件的方法和发光器件。 根据本发明的一个方面的气相沉积系统可以包括：具有第一基座和至少一个气体分布器的第一腔室，其沿平行于设置在第一基座上的衬底的方向排放气体; 以及第二室，具有第二基座和布置在第二基座上方的至少一个第二气体分配器，以向下排放气体。 当使用根据本发明的一个方面的气相沉积系统时，由此生长的半导体层具有优异的结晶质量，从而提高了发光器件的性能。 此外，虽然改善了气相沉积系统的操作能力和生产率，但是可以防止装置的劣化。

公开(公告)号：US09172000B2

公开(公告)日：2015-10-27

申请号：US13167396

申请日：2011-06-23

申请人： Tae Hun Kim ,  Gi Bum Kim ,  Won Goo Hur ,  Young Sun Kim ,  Ki Sung Kim

发明人： Tae Hun Kim ,  Gi Bum Kim ,  Won Goo Hur ,  Young Sun Kim ,  Ki Sung Kim

IPC分类号： H01L21/00 ,  H01L51/40 ,  H01L33/22 ,  H01L33/00

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L2933/0091

摘要： Disclosed are a semiconductor light emitting device and a method of manufacturing the same. The method includes providing a substrate having first and second main surfaces opposing each other and forming a first uneven structure in the first main surface, forming a sacrificial layer on the first main surface of the substrate, forming a mask having open regions on the sacrificial layer so as to expose a portion of an upper surface of the sacrificial layer, forming a second uneven structure in the substrate by etching the sacrificial layer and the substrate through the open regions, removing the sacrificial layer and the mask from the substrate, and forming a light emitting stack on the first and second uneven structures of the substrate.

摘要翻译： 公开了一种半导体发光器件及其制造方法。 该方法包括提供具有彼此相对的第一和第二主表面的衬底，并且在第一主表面中形成第一不平坦结构，在衬底的第一主表面上形成牺牲层，在牺牲层上形成具有开放区域的掩模 以便暴露牺牲层的上表面的一部分，通过通过开放区域蚀刻牺牲层和衬底，在衬底中形成第二不均匀结构，从衬底去除牺牲层和掩模，并形成 发光堆叠在基板的第一和第二不平坦结构上。

公开(公告)号：US08455282B2

公开(公告)日：2013-06-04

申请号：US13162254

申请日：2011-06-16

申请人： Ki Sung Kim ,  Gi Bum Kim ,  Tae Hun Kim ,  Young Chul Shin ,  Young Sun Kim

发明人： Ki Sung Kim ,  Gi Bum Kim ,  Tae Hun Kim ,  Young Chul Shin ,  Young Sun Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/20 ,  H01L2933/0025 ,  H01L2933/0091

摘要： A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions; forming a protection layer on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and forming a second concavoconvex portion on the convex portion of the first concavoconvex portion. The semiconductor light emitting diode (LED) includes: a light emission structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first concavoconvex portion formed on the light emission structure and having a second concavoconvex portion at a convex portion thereof; and a protection layer filling up a concave portion of the first concavoconvex portion.

摘要翻译： 公开了一种半导体发光二极管（LED）及其制造方法。 制造半导体发光二极管（LED）的方法包括：在具有突起和凹陷的基板上形成包括第一导电半导体层，有源层和第二导电半导体层的发光结构; 从所述发光结构去除所述衬底以暴露对应于所述突起和凹陷的第一凹凸部分; 在第一凹凸部上形成保护层; 去除所述保护层的一部分以暴露所述第一凹凸部的凸部; 以及在所述第一凹凸部的所述凸部上形成第二凹凸部。 半导体发光二极管（LED）包括：包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 形成在所述发光结构上的第一凹凸部，在其凸部具有第二凹凸部; 以及填充所述第一凹凸部的凹部的保护层。