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    METHOD FOR FORMING FINE PATTERN IN SEMICONDUCTOR DEVICE
    13.
    发明申请
    METHOD FOR FORMING FINE PATTERN IN SEMICONDUCTOR DEVICE 失效
    在半导体器件中形成精细图案的方法

    公开(公告)号：US20100233622A1

    公开(公告)日：2010-09-16

    申请号：US12618530

    申请日：2009-11-13

    申请人： Jun-Gyeong Lee ,  Jung-Youl Lee ,  Jeong-Sik Kim ,  Eu-Jean Jang ,  Jae-Woo Lee ,  Deog-Bae Kim ,  Jae-Hyun Kim

    发明人： Jun-Gyeong Lee ,  Jung-Youl Lee ,  Jeong-Sik Kim ,  Eu-Jean Jang ,  Jae-Woo Lee ,  Deog-Bae Kim ,  Jae-Hyun Kim

    IPC分类号： G03F7/00 ,  G03C1/00 ,  G03C1/053

    CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/0752 ,  G03F7/70466 ,  H01L21/0273

    摘要： Disclosed is a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (Eth) of the photoresist layer without an exposure mask, and then developing the same.

    摘要翻译： 公开了一种使用双曝光图案化工艺制造精细图案的半导体器件的方法，用于通过简单地在没有曝光掩模的情况下曝光来制造第二光致抗蚀剂图案。 该方法包括以下步骤：在半导体衬底上形成第一光致抗蚀剂图案，在其上形成待蚀刻的层; 在第一光致抗蚀剂图案上涂覆用于镜面中间层的组合物以形成镜面中间层; 在所得物上形成光致抗蚀剂层; 以及通过将所述光致抗蚀剂层暴露于能量低于所述光致抗蚀剂层的阈值能量（Eth）的光而形成通过所述镜面 - 中间层的散射反射并且位于所述第一光致抗蚀剂图案之间的第二光致抗蚀剂图案， 没有曝光掩模，然后开发相同。

    Photosensitive compound and photoresist composition including the same
    17.
    发明授权
    Photosensitive compound and photoresist composition including the same 失效
    光敏化合物和包含其的光致抗蚀剂组合物

    公开(公告)号：US07745099B2

    公开(公告)日：2010-06-29

    申请号：US12270532

    申请日：2008-11-13

    申请人： Jung-Woo Kim ,  Deog-Bae Kim ,  Jae-Hyun Kim

    发明人： Jung-Woo Kim ,  Deog-Bae Kim ,  Jae-Hyun Kim

    IPC分类号： G03F7/039 ,  G03F7/038 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38

    CPC分类号： G03F7/0045 ,  C07C69/94 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2603/74 ,  C08G65/3315 ,  C08G65/3326 ,  C08G65/3346 ,  G03F7/0392

    摘要： A photosensitive compound as a molecular resist whose size is smaller than conventional polymer for photoresist, and which can form a nano assembly, and a photoresist composition including the same are disclosed. The photosensitive compound represented by the following formula. Also, the present invention provides a photoresist composition comprising 1 to 85 wt % (weight %) of the photosensitive compound; 0.05 to 15 weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound; and 50 to 5000 weight parts of an organic solvent with respect to 100 weight parts of the photosensitive compound. In the formula, n is the number of repetition of an isopropyl oxide (—CH(CH3)CH2O—) monomer, and is an integer of 1 to 40, and R is an alkyl group of 1 to 20 carbon atoms or a cycloalkyl group of 3 to 20 carbon atoms.

    摘要翻译： 公开了作为分子抗蚀剂的感光性化合物，其尺寸小于用于光致抗蚀剂的常规聚合物，并且可以形成纳米组件，并且包含其的光致抗蚀剂组合物。 由下式表示的感光性化合物。 另外，本发明提供了含有1〜85重量％（重量）感光性化合物的光致抗蚀剂组合物， 0.05〜15重量份的光酸发生剂相对于100重量份的感光性化合物; 相对于100重量份感光性化合物为50〜5000重量份的有机溶剂。 在该式中，n是异丙氧基（-CH（CH 3）CH 2 O-）单体的重复数，为1〜40的整数，R为碳原子数1〜20的烷基或环烷基 3至20个碳原子。

    Photosensitive polymer and photoresist composition
    18.
    发明授权
    Photosensitive polymer and photoresist composition 失效
    光敏聚合物和光致抗蚀剂组合物

    公开(公告)号：US07504195B2

    公开(公告)日：2009-03-17

    申请号：US11836599

    申请日：2007-08-09

    申请人： Deog-Bae Kim ,  Jae-Hyun Kim

    发明人： Deog-Bae Kim ,  Jae-Hyun Kim

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： C08G61/02 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

    摘要： A photosensitive polymer which can form a fine circuit pattern by exacting with extreme UV and deep UV, and can improve a line width stability of a pattern by significantly reducing line edge roughness after developing, and a photoresist composition including the same are disclosed. The photosensitive polymer for extreme UV and deep UV includes a repeating unit represented by the following Formula 1, in Formula 1, R1 and R1′ are independently a hydrogen atom, methyl group, or trifluoromethyl group, and R2 is wherein Ra and Rb are independently alkyl group of 1 to 10 carbon atoms, aryl group of 6 to 10 carbon atoms, or arylalkyl group of 7 to 12 carbon atoms, and can be connected together to form ring, and a and b are mol % of each repeating unit with respect to the total repeating unit constituting the photosensitive polymer, and are 1 to 99 mol % and 1 to 99 mol % respectively.

    摘要翻译： 可以通过用极紫外和深紫外线精确地形成精细电路图案的光敏聚合物，并且可以通过在显影后显着降低线边缘粗糙度来改善图案的线宽稳定性，并且公开了包括其的光致抗蚀剂组合物。 用于极紫外和深紫外光的光敏聚合物包括由式1中的下式1表示的重复单元，R1和R1'独立地为氢原子，甲基或三氟甲基，R2为其中Ra和Rb独立地为 1〜10个碳原子的烷基，6〜10个碳原子的芳基或7〜12个碳原子的芳基烷基，并且可以连接在一起形成环，a和b相对于每个重复单元的摩尔％ 相对于构成感光性高分子的总重复单元，分别为1〜99摩尔％，1〜99摩尔％。

    Photosensitive polymer and chemically amplified photoresist composition including the same
    19.
    发明授权
    Photosensitive polymer and chemically amplified photoresist composition including the same 失效
    光敏聚合物和包含其的化学放大光致抗蚀剂组合物

    公开(公告)号：US07297463B2

    公开(公告)日：2007-11-20

    申请号：US11142444

    申请日：2005-06-02

    申请人： Deog-Bae Kim ,  Sang-Jeoung Kim ,  Hwa-Young Kim ,  Jin Jegal ,  Jae-Hyun Kim

    发明人： Deog-Bae Kim ,  Sang-Jeoung Kim ,  Hwa-Young Kim ,  Jin Jegal ,  Jae-Hyun Kim

    IPC分类号： C08F212/08

    CPC分类号： C08F212/14 ,  C08F12/22 ,  C08F12/26 ,  C08K5/36 ,  G03F7/0045 ,  G03F7/0392 ,  C08L25/14 ,  C08L25/18 ,  C08F212/08

    摘要： A photosensitive polymer for forming high-resolution fine circuit patterns with an exposure light source of a short wavelength, and a chemically amplified photoresist composition including the polymer, are disclosed. The photosensitive polymer is represented by the following Formula 1, wherein R1 is a hydrogen atom, R2 is a hydrogen atom, R3 is a chlorine atom, a bromine atom, hydroxy, cyano, t-butoxy, CH2NH2, CONH2, CH═NH, CH(OH)NH2 or C(OH)═NH group, R4 is a hydrogen atom or methyl group, each of 1-x-y-z, x, y and z is a degree of polymerization of each repeating unit constituting the photosensitive polymer, x, y and z are 0.01 to 0.8, respectively, and n is 1 or 2.

    摘要翻译： 公开了用于形成具有短波长的曝光光源的高分辨率精细电路图案的光敏聚合物和包含该聚合物的化学放大光致抗蚀剂组合物。 光敏聚合物由下式1表示，其中R 1是氢原子，R 2是氢原子，R 3是 氯原子，溴原子，羟基，氰基，叔丁氧基，CH 2 NH 2，CONH 2，CH-NH，CH （OH）NH 2或C（OH）-NH基，R 4是氢原子或甲基，1-xyz，x，y和z分别为 构成感光性聚合物的各重复单元的x，y，z的聚合度分别为0.01〜0.8，n为1或2。