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41 条记录 (耗时 0.03 秒)

    Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer
    14.
    发明授权
    Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer 失效
    填充狭窄的孔径并与金属形成互连，利用晶体取向的衬层

    公开(公告)号：US06217721B1

    公开(公告)日：2001-04-17

    申请号：US08628835

    申请日：1996-04-05

    申请人： Zheng Xu ,  John Forster ,  Tse-Yong Yao ,  Jaim Nulman ,  Fusen Chen

    发明人： Zheng Xu ,  John Forster ,  Tse-Yong Yao ,  Jaim Nulman ,  Fusen Chen

    IPC分类号： C23C1434

    CPC分类号： H01L21/2855 ,  C23C14/0036 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/32 ,  C23C14/358 ,  H01J37/34 ,  H01J2237/32 ,  H01L21/28518 ,  H01L21/76846 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An aluminum sputtering process, particularly useful for filling vias and contacts of high aspect ratios formed through a dielectric layer and also usefull for forming interconnects that are highly resistant to electromigration. A liner or barrier layer is first deposited by a high-density plasma (HDP) physical vapor deposition (PVD, also called sputtering) process, such as is done with an inductively coupled plasma. If a contact is connected at its bottom to a silicon element, the first sublayer of the liner layer is a Ti layer, which is silicided to the silicon substrate. The second sublayer comprises TiN, which not only acts as a barrier against the migration of undesirable components into the underlying silicon but also when deposited with an HDP process and biased wafer forms a dense, smooth crystal structure. The third sublayer comprises Ti and preferably is graded from TiN to Ti. Over the liner layer, an aluminum layer is deposited in a standard, non-HDP process. The liner layer allows the hottest part of the aluminum deposition to be performed at a relatively low temperature between 320 and 500° C., preferably between 350 and 420° C., while still filling narrow plug holes, and the TiN does not need to be annealed to form an effective barrier against diffusion into the silicon. A horizontal interconnect formed by the inventive process is resistant to electromigration.

    摘要翻译： 铝溅射工艺，特别适用于填充通过电介质层形成的高纵横比的通孔和触点，并且也可用于形成高度抵抗电迁移的互连。 衬垫或阻挡层首先通过高密度等离子体（HDP）物理气相沉积（PVD，也称为溅射）工艺沉积，例如用电感耦合等离子体进行。 如果接触件的底部连接到硅元件，衬垫层的第一子层是Ti层，硅层被硅化到硅衬底。 第二子层包括TiN，其不仅用作防止不期望的组分迁移到下面的硅中的阻挡层，而且当用HDP工艺沉积并且偏置的晶片形成致密的，平滑的晶体结构时。 第三子层包含Ti，优选从TiN到Ti分级。 在衬里层上，铝层以标准的非HDP工艺沉积。 衬垫层允许铝沉积的最热部分在320和500℃之间的较低温度下进行，优选在350和420℃之间，同时仍然填充窄的塞孔，并且TiN不需要 进行退火以形成抵抗硅中扩散的有效屏障。 由本发明方法形成的水平互连对于电迁移是耐受的。

    Method for low thermal budget metal filling and planarization of contacts vias and trenches
    15.
    发明授权
    Method for low thermal budget metal filling and planarization of contacts vias and trenches 失效
    用于低热预算金属填充和平面化接触通孔和沟槽半导体晶片的方法和装置

    公开(公告)号：US06313027B1

    公开(公告)日：2001-11-06

    申请号：US08944140

    申请日：1997-10-06

    申请人： Zheng Xu ,  John Forster ,  Tse-Yong Yao

    发明人： Zheng Xu ,  John Forster ,  Tse-Yong Yao

    IPC分类号： H01L214763

    CPC分类号： H01L21/2855 ,  C23C14/0036 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/32 ,  C23C14/358 ,  H01J37/34 ,  H01J2237/32 ,  H01L21/28518 ,  H01L21/76846 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention pertains to a carrier layer and a contact enabled by the carrier layer which enables the fabrication of aluminum (including aluminum alloys and other conductive materials having a similar melting point) electrical contacts in multilayer integrated circuit vias, through holes, or trenches having an aspect ratio greater than one. In fact, the structure has been shown to enable such contact fabrication in vias, through holes, and trenches having aspect ratios as high as at least 5:1, and should be capable of filing apertures having aspect ratios up to about 12:1. The carrier layer, in addition to permitting the formation of a conductive contact at high aspect ratio, provides a diffusion barrier which prevents the aluminum from migrating into surrounding substrate material which operates in conjunction with the electrical contact. The carrier layer preferably comprises a layer formed by ionizing the flux of sputter deposition material, partially reacting the flux with a gas, and depositing the resulting material on a substrate.

    摘要翻译： 本发明涉及载体层和由载体层实现的接触，其能够在多层集成电路通孔，通孔或沟槽中制造具有类似熔点的铝（包括铝合金和具有相似熔点的其它导电材料）电接触，所述多层集成电路通孔，通孔或沟槽具有 长宽比大于1。 事实上，已经显示了这种结构能够使通孔，通孔和沟槽中的这种接触制造具有高达至少5:1的纵横比，并且应该能够填充具有高达约12:1的纵横比的孔。 除了允许以高纵横比形成导电接触之外，载体层提供了扩散阻挡层，其防止铝迁移到与电触点一起操作的周围基底材料中。 载体层优选包括通过电离溅射沉积材料的焊剂形成的层，使焊剂与气体部分地反应，并将所得材料沉积在衬底上。

    Sputtering using an unbalanced magnetron
    18.
    发明授权
    Sputtering using an unbalanced magnetron 有权
    使用不平衡磁控管进行溅射

    公开(公告)号：US07335282B2

    公开(公告)日：2008-02-26

    申请号：US10939832

    申请日：2004-09-13

    申请人： Jianming Fu ,  Praburam Gopalraja ,  Fusen Chen ,  John Forster

    发明人： Jianming Fu ,  Praburam Gopalraja ,  Fusen Chen ,  John Forster

    IPC分类号： C23C14/35

    CPC分类号： H01J37/3455 ,  H01J37/3408

    摘要： A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face with a gap therebetween. The outer pole of the magnetron of the invention is smaller than that of a circular magnetron similarly extending from the center to the periphery of the target and has a substantially larger total magnetic intensity. Thereby, sputtering at low pressure and high ionization fraction is enabled.

    摘要翻译： 溅射工艺和磁控管对于低压等离子体溅射或持续自溅射特别有利，其中磁控管具有减小的面积但是完全的目标覆盖。 磁控管包括围绕内极面的外极面，其间具有间隙。 本发明的磁控管的外极小于圆形磁控管的外极，其类似地从靶的中心延伸到周边，并具有基本上更大的总磁场强度。 由此，可以实现低压高离子化分级的溅射。

    Method and apparatus for generating a plasma
    20.
    发明授权
    Method and apparatus for generating a plasma 失效

    公开(公告)号：US06264812B1

    公开(公告)日：2001-07-24

    申请号：US08559345

    申请日：1995-11-15

    申请人： Ivo J. Raaijmakers ,  Bradley O. Stimson ,  John Forster

    发明人： Ivo J. Raaijmakers ,  Bradley O. Stimson ,  John Forster

    IPC分类号： C23C1434

    CPC分类号： H01J37/321 ,  H01J37/32165 ,  H01J37/32477

    摘要： A method and apparatus for generating a plasma by inductively coupling electromagnetic energy into the plasma. In one embodiment, first and second antenna coils are disposed about the circumference of the plasma containment area. The first and second antenna coils are relatively spaced along the longitudinal axis of the plasma containment area. A current is generated in the first and second antenna coils. A phase shift regulating network establishes a difference between the phase of the current in the first antenna and the phase of the current in the second antenna. The phase difference corresponds to the phase difference required to launch a helicon wave in the plasma. In a second embodiment, a chamber shield is made of a conductive material and is coupled to the RF source such that the shield functions as an RF antenna. The shield may be coupled in series to a coil surrounding the shield to increase the resultant flux density.