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11.发明申请SEMICONDUCTOR MATERIAL, OPTICAL HYDROGEN GENERATING DEVICE USING SAME, AND METHOD OF PRODUCING HYDROGEN 有权半导体材料，使用其的光学氢生成装置和生产氢的方法公开(公告)号：US20140224665A1
公开(公告)日：2014-08-14
申请号：US14342489
申请日：2012-08-31
申请人： Kazuhito Hato , Kenichi Tokuhiro , Takahiro Suzuki , Takaiki Nomura , Kenichiro Ota , Akimitsu Ishihara
发明人： Kazuhito Hato , Kenichi Tokuhiro , Takahiro Suzuki , Takaiki Nomura , Kenichiro Ota , Akimitsu Ishihara
CPC分类号： B01J27/24 , B01J19/127 , B01J35/004 , B01J37/347 , C01B3/042 , C25B1/003 , C25B1/04 , C25B9/00 , C25B9/06 , Y02E60/364 , Y02E60/366
摘要： A semiconductor material of the present invention is a semiconductor material including an oxynitride containing at least one element selected from the Group 4 elements and Group 5 elements. In the oxynitride, part of at least one selected from oxygen and nitrogen is substituted with carbon. Nb is preferable as the Group 5 element.
摘要翻译： 本发明的半导体材料是包含含有选自第4族元素和第5族元素中的至少一种元素的氮氧化物的半导体材料。 在氧氮化物中，选自氧和氮中的至少一种的一部分被碳取代。 Nb优选为第5族元素。
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公开(公告)号：US08758578B2
公开(公告)日：2014-06-24
申请号：US13260825
申请日：2010-08-05
CPC分类号： H01M14/005 , C25B1/003 , H01G9/205 , Y02E10/542 , Y02E60/364 , Y02P20/135
摘要： A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a substrate (121), a first n-type semiconductor layer (122) disposed on the substrate (121), and a second n-type semiconductor layer (123) and a conductor (124) disposed apart from each other on the first n-type semiconductor layer (122); a counter electrode (130) connected electrically to the conductor (124); an electrolyte (140) in contact with surfaces of the second n-type semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). In the semiconductor electrode (120), relative to a vacuum level, (I) band edge levels of a conduction band and a valence band in the second n-type semiconductor layer (123), respectively, are higher than band edge levels of a conduction band and a valence band in the first n-type semiconductor layer (122), (II) a Fermi level of the first n-type semiconductor layer (122) is higher than a Fermi level of the second n-type semiconductor layer (123), and (III) a Fermi level of the conductor (124) is higher than the Fermi level of the first n-type semiconductor layer (122). The photoelectrochemical cell (100) generates hydrogen by irradiation of the second n-type semiconductor layer (123) with light.
摘要翻译： 光电化学电池（100）包括：包括基板（121），设置在基板（121）上的第一n型半导体层（122）和第二n型半导体层（123））的半导体电极（120） 以及在所述第一n型半导体层（122）上彼此分离设置的导体（124）。 与所述导体（124）电连接的对电极（130）。 与第二n型半导体层（123）和对电极（130）的表面接触的电解液（140）; 以及容纳半导体电极（120），对电极（130）和电解质（140）的容器（110）。 在半导体电极（120）中，相对于真空度，第二n型半导体层（123）中的导带和价带的（I）带边缘电平分别高于 导电带和第一n型半导体层（122）中的价带，（II）第一n型半导体层（122）的费米能级高于第二n型半导体层（6）的费米能级 123），（III）导体（124）的费米能级高于第一n型半导体层（122）的费米能级。 光电化学电池（100）通过用光照射第二n型半导体层（123）产生氢。
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13.发明申请NbON FILM, METHOD FOR PRODUCING NbON FILM, HYDROGEN GENERATION DEVICE, AND ENERGY SYSTEM PROVIDED WITH SAME 有权铌膜，生产铌膜的方法，氢发生装置和具有相同能量的能量系统公开(公告)号：US20130192984A1
公开(公告)日：2013-08-01
申请号：US13876684
申请日：2012-08-01
CPC分类号： C25B11/0447 , B01J35/004 , C01B13/0207 , C23C16/308 , C23C16/405 , C25B1/003 , C25B1/04 , C25B9/00 , H01M8/0656 , Y02E60/364 , Y02E60/368 , Y02E60/50
摘要： The NbON film of the present invention is a NbON film in which a photocurrent is generated by light irradiation. The NbON film of the present invention is desirably a single-phase film. The hydrogen generation device (600) of the present invention includes: an optical semiconductor electrode (620) including a conductor (621) and the NbON film (622) of the present invention disposed on the conductor (621); a counter electrode (630) connected electrically to the conductor (621); a water-containing electrolyte (640) disposed in contact with a surface of the NbON film (622) and a surface of the counter electrode (630); and a container (610) containing the optical semiconductor electrode (620), the counter electrode (630), and the electrolyte (640). In this device, hydrogen is generated by irradiating the NbON film (622) with light.
摘要翻译： 本发明的NbON膜是通过光照射产生光电流的NbON膜。 本发明的NbON膜优选为单相膜。 本发明的氢生成装置（600）包括：配置在导体（621）上的本发明的导体（621）和NbON膜（622）的光学半导体电极（620） 与所述导体（621）电连接的对电极（630）。 与所述NbON膜（622）的表面和所述对置电极（630）的表面接触地配置的含水电解质（640）。 和包含光学半导体电极（620），对电极（630）和电解质（640）的容器（610）。 在该装置中，通过用光照射NbON膜（622）来产生氢。
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14.发明授权公开(公告)号：US09630169B2
公开(公告)日：2017-04-25
申请号：US14342489
申请日：2012-08-31
申请人： Kazuhito Hato , Kenichi Tokuhiro , Takahiro Suzuki , Takaiki Nomura , Kenichiro Ota , Akimitsu Ishihara
发明人： Kazuhito Hato , Kenichi Tokuhiro , Takahiro Suzuki , Takaiki Nomura , Kenichiro Ota , Akimitsu Ishihara
IPC分类号： B01J27/24 , B01J19/12 , B01J37/34 , B01J35/00 , C01B3/04 , C25B1/00 , C25B1/04 , C25B9/00 , C25B9/06
CPC分类号： B01J27/24 , B01J19/127 , B01J35/004 , B01J37/347 , C01B3/042 , C25B1/003 , C25B1/04 , C25B9/00 , C25B9/06 , Y02E60/364 , Y02E60/366
摘要： A semiconductor material of the present invention is a semiconductor material including an oxynitride containing at least one element selected from the Group 4 elements and Group 5 elements. In the oxynitride, part of at least one selected from oxygen and nitrogen is substituted with carbon. Nb is preferable as the Group 5 element.
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公开(公告)号：US09353449B2
公开(公告)日：2016-05-31
申请号：US13876684
申请日：2012-08-01
IPC分类号： B05D5/12 , C23C16/00 , C25B11/04 , C01B13/02 , C23C16/30 , C23C16/40 , C25B1/00 , C25B1/04 , C25B9/00 , H01M8/06 , B01J35/00
CPC分类号： C25B11/0447 , B01J35/004 , C01B13/0207 , C23C16/308 , C23C16/405 , C25B1/003 , C25B1/04 , C25B9/00 , H01M8/0656 , Y02E60/364 , Y02E60/368 , Y02E60/50
摘要： The NbON film of the present invention is a NbON film in which a photocurrent is generated by light irradiation. The NbON film of the present invention is desirably a single-phase film. The hydrogen generation device (600) of the present invention includes: an optical semiconductor electrode (620) including a conductor (621) and the NbON film (622) of the present invention disposed on the conductor (621); a counter electrode (630) connected electrically to the conductor (621); a water-containing electrolyte (640) disposed in contact with a surface of the NbON film (622) and a surface of the counter electrode (630); and a container (610) containing the optical semiconductor electrode (620), the counter electrode (630), and the electrolyte (640). In this device, hydrogen is generated by irradiating the NbON film (622) with light.
摘要翻译： 本发明的NbON膜是通过光照射产生光电流的NbON膜。 本发明的NbON膜优选为单相膜。 本发明的氢生成装置（600）包括：配置在导体（621）上的本发明的导体（621）和NbON膜（622）的光学半导体电极（620） 与所述导体（621）电连接的对电极（630）。 与所述NbON膜（622）的表面和所述对置电极（630）的表面接触地配置的含水电解质（640）。 和包含光学半导体电极（620），对电极（630）和电解质（640）的容器（610）。 在该装置中，通过用光照射NbON膜（622）来产生氢。
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16.发明授权Optical semiconductor, optical semiconductor electrode using same, photoelectrochemical cell, and energy system 有权光半导体，使用其的光半导体电极，光电化学电池和能量系统公开(公告)号：US08853685B2
公开(公告)日：2014-10-07
申请号：US13575770
申请日：2011-03-03
IPC分类号： H01L29/12 , C01B21/082 , C25B1/00 , H01M8/06
CPC分类号： H01M8/0656 , C01B21/0821 , C01P2002/72 , C01P2002/77 , C01P2002/84 , C01P2002/85 , C04B35/453 , C04B35/58 , C04B35/62675 , C04B2235/3284 , C04B2235/3286 , C04B2235/46 , C04B2235/76 , C04B2235/80 , C04B2235/81 , C25B1/003 , Y02E60/364 , Y02E60/366 , Y02E60/50
摘要： The optical semiconductor of the present invention is an optical semiconductor containing In, Ga, Zn, O and N, and has a composition in which a part of oxygen (O) is substituted by nitrogen (N) in a general formula: In2xGa2(1-x)O3(ZnO)y, where x and y satisfy 0.2
摘要翻译： 本发明的光学半导体是含有In，Ga，Zn，O和N的光学半导体，其通式为：In 2 x Ga 2（1）中的一部分氧（O）被氮（N）取代的组成 -x）O 3（ZnO）y，其中x和y满足0.2
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17.发明申请OPTICAL SEMICONDUCTOR, OPTICAL SEMICONDUCTOR ELECTRODE USING SAME, PHOTOELECTROCHEMICAL CELL, AND ENERGY SYSTEM 有权光学半导体，使用其的光学半导体电极，光电化学电池和能量系统公开(公告)号：US20120292618A1
公开(公告)日：2012-11-22
申请号：US13575770
申请日：2011-03-03
IPC分类号： H01L31/0248
CPC分类号： H01M8/0656 , C01B21/0821 , C01P2002/72 , C01P2002/77 , C01P2002/84 , C01P2002/85 , C04B35/453 , C04B35/58 , C04B35/62675 , C04B2235/3284 , C04B2235/3286 , C04B2235/46 , C04B2235/76 , C04B2235/80 , C04B2235/81 , C25B1/003 , Y02E60/364 , Y02E60/366 , Y02E60/50
摘要： The optical semiconductor of the present invention is an optical semiconductor containing In, Ga, Zn, O and N, and has a composition in which a part of oxygen (O) is substituted by nitrogen (N) in a general formula: In2xGa2(1-x)O3(ZnO)y, where x and y satisfy 0.2
摘要翻译： 本发明的光学半导体是含有In，Ga，Zn，O和N的光学半导体，其通式为：In 2 x Ga 2（1）中的一部分氧（O）被氮（N）取代的组成 -x）O 3（ZnO）y，其中x和y满足0.2
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公开(公告)号：US20120028141A1
公开(公告)日：2012-02-02
申请号：US13260825
申请日：2010-08-05
CPC分类号： H01M14/005 , C25B1/003 , H01G9/205 , Y02E10/542 , Y02E60/364 , Y02P20/135
摘要： A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a substrate (121), a first n-type semiconductor layer (122) disposed on the substrate (121), and a second n-type semiconductor layer (123) and a conductor (124) disposed apart from each other on the first n-type semiconductor layer (122); a counter electrode (130) connected electrically to the conductor (124); an electrolyte (140) in contact with surfaces of the second n-type semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). In the semiconductor electrode (120), relative to a vacuum level, (I) band edge levels of a conduction band and a valence band in the second n-type semiconductor layer (123), respectively, are higher than band edge levels of a conduction band and a valence band in the first n-type semiconductor layer (122), (II) a Fermi level of the first n-type semiconductor layer (122) is higher than a Fermi level of the second n-type semiconductor layer (123), and (III) a Fermi level of the conductor (124) is higher than the Fermi level of the first n-type semiconductor layer (122). The photoelectrochemical cell (100) generates hydrogen by irradiation of the second n-type semiconductor layer (123) with light.
摘要翻译： 光电化学电池（100）包括：包括基板（121），设置在基板（121）上的第一n型半导体层（122）和第二n型半导体层（123））的半导体电极（120） 以及在所述第一n型半导体层（122）上彼此分离设置的导体（124）。 与所述导体（124）电连接的对电极（130）。 与第二n型半导体层（123）和对电极（130）的表面接触的电解液（140）; 以及容纳半导体电极（120），对电极（130）和电解质（140）的容器（110）。 在半导体电极（120）中，相对于真空度，第二n型半导体层（123）中的导带和价带的（I）带边缘电平分别高于 导电带和第一n型半导体层（122）中的价带，（II）第一n型半导体层（122）的费米能级高于第二n型半导体层（6）的费米能级 123），（III）导体（124）的费米能级高于第一n型半导体层（122）的费米能级。 光电化学电池（100）通过用光照射第二n型半导体层（123）产生氢。
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公开(公告)号：US20110203661A1
公开(公告)日：2011-08-25
申请号：US13119117
申请日：2010-04-26
申请人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hatoh
发明人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hatoh
IPC分类号： H01L31/0328
CPC分类号： B01J35/004 , B01J23/002 , B01J23/08 , B01J23/10 , B01J23/62 , B01J2523/00 , C01B3/042 , C01B13/0207 , C01G25/006 , C01P2002/52 , C01P2002/54 , C01P2002/72 , C01P2002/77 , C01P2002/84 , C01P2004/34 , C01P2006/40 , C25B1/003 , Y02E60/364 , B01J2523/25 , B01J2523/32 , B01J2523/48 , B01J2523/375 , B01J2523/33
摘要： The optically pumped semiconductor according to the present invention is an optically pumped semiconductor that is a semiconductor of a perovskite oxide. The optically pumped semiconductor has a composition represented by a general formula: BaZr1-xMxO3-α, where M denotes at least one element selected from trivalent elements, x denotes a numerical value more than 0 but less than 0.8, and α denotes an amount of oxygen deficiency that is a numerical value more than 0 but less than 1.5. The optically pumped semiconductor has a crystal system of a cubic, tetragonal, or orthorhombic crystal. When lattice constants of the crystal system are referred to as a, b, and c, provided that a≦b≦c, conditions that 0.41727 nm≦a, b, c≦0.42716 nm and a/c≧0.98 are satisfied.
摘要翻译： 根据本发明的光泵浦半导体是作为钙钛矿氧化物的半导体的光泵浦半导体。 光泵浦半导体具有由通式BaZr1-xMxO3-α表示的组成，其中M表示选自三价元素中的至少一种元素，x表示大于0但小于0.8的数值，α表示 氧缺乏是数值超过0但小于1.5的缺氧。 光泵浦半导体具有立方晶，四方晶或正交晶体的晶体系。 如果晶体系的晶格常数被称为a，b和c，条件是满足0.41727nm＆nlE; a，b，c＆nlE; 0.42716nm和a /c≥0.98的条件。
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公开(公告)号：US08951447B2
公开(公告)日：2015-02-10
申请号：US13119117
申请日：2010-04-26
申请人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hatoh
发明人： Noboru Taniguchi , Kenichi Tokuhiro , Takahiro Suzuki , Tomohiro Kuroha , Takaiki Nomura , Kazuhito Hatoh
IPC分类号： H01B1/02 , B01J35/00 , B01J23/00 , B01J23/08 , B01J23/10 , B01J23/62 , C01B3/04 , C01B13/02 , C01G25/00 , C25B1/00
CPC分类号： B01J35/004 , B01J23/002 , B01J23/08 , B01J23/10 , B01J23/62 , B01J2523/00 , C01B3/042 , C01B13/0207 , C01G25/006 , C01P2002/52 , C01P2002/54 , C01P2002/72 , C01P2002/77 , C01P2002/84 , C01P2004/34 , C01P2006/40 , C25B1/003 , Y02E60/364 , B01J2523/25 , B01J2523/32 , B01J2523/48 , B01J2523/375 , B01J2523/33
摘要： The optically pumped semiconductor according to the present invention is an optically pumped semiconductor that is a semiconductor of a perovskite oxide. The optically pumped semiconductor has a composition represented by a general formula: BaZr1-xMxO3-α, where M denotes at least one element selected from trivalent elements, x denotes a numerical value more than 0 but less than 0.8, and α denotes an amount of oxygen deficiency that is a numerical value more than 0 but less than 1.5. The optically pumped semiconductor has a crystal system of a cubic, tetragonal, or orthorhombic crystal. When lattice constants of the crystal system are referred to as a, b, and c, provided that a≦b≦c, conditions that 0.41727 nm≦a, b, c≦0.42716 nm and a/c≧0.98 are satisfied.
摘要翻译： 根据本发明的光泵浦半导体是作为钙钛矿氧化物的半导体的光泵浦半导体。 光泵浦半导体具有由通式BaZr1-xMxO3-α表示的组成，其中M表示选自三价元素中的至少一种元素，x表示大于0但小于0.8的数值，α表示 氧缺乏是数值超过0但小于1.5的缺氧。 光泵浦半导体具有立方晶，四方晶或正交晶体的晶体系。 如果晶体系的晶格常数被称为a，b和c，条件是满足0.41727nm＆nlE; a，b，c＆nlE; 0.42716nm和a /c≥0.98的条件。
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