Method and apparatus for drilling printed wiring boards
    11.
    发明授权
    Method and apparatus for drilling printed wiring boards 失效
    印刷线路板钻孔方法和装置

    公开(公告)号:US06531677B2

    公开(公告)日:2003-03-11

    申请号:US09970909

    申请日:2001-10-05

    IPC分类号: B23K2638

    摘要: An improved method and apparatus for drilling blind via holes to connect between upper conductive layers and lower conductive layers of printed wiring boards with laser lights. The resin layer contacting the targeted conductive layer is drilled to remain the residual layer with laser lights, and the residual layer is removed with a UV laser beam whose energy density is lower than the decomposition energy threshold of the conductive layer and higher than that of the resin layer. The apparatus for this drilling has at least two laser paths. The spatial energy distributions are made top-hat-shaped with beam homogenizer units in the paths, and the diameters and the energy densities are adjusted independently.

    摘要翻译: 一种用于钻孔盲孔的改进方法和装置,以连接具有激光的印刷线路板的上导电层和下导电层。 钻孔与目标导电层接触的树脂层用激光保持残留层,残余层用能量密度低于导电层分解能阈值的紫外激光束去除,高于 树脂层。 用于该钻孔的装置具有至少两个激光路径。 空间能量分布由路径中的光束均化器单元制成顶帽形,直径和能量密度独立调整。

    Polyimide precursors and polyimides
    12.
    发明授权
    Polyimide precursors and polyimides 有权
    聚酰亚胺前体和聚酰亚胺

    公开(公告)号:US06489431B1

    公开(公告)日:2002-12-03

    申请号:US09806487

    申请日:2001-04-12

    IPC分类号: C08G7310

    CPC分类号: C08G73/1039 C08G73/10

    摘要: A polyimide precursor having a repeating unit represented by the following general formula (1), wherein R1 contains a bivalent organic group constituting a diamine having a hexafluoropropylidene group in its molecule represented by the following general formula (2), and the reduced viscosity is from 0.05 to 5.0 dl/g (in N-methylpyrrolidone at a temperature of 30° C., concentration: 0.5 g/dl), and a polyimide obtained by imidizing said precursor: (wherein R1 is a bivalent organic group constituting a diamine, A is a hydrogen atom, a linear alkyl group including a methyl group, or a trifluoromethyl group, and n is the number of a substituent on an aromatic ring and an integer of from 1 to 4).

    摘要翻译: 具有由以下通式(1)表示的重复单元的聚酰亚胺前体,其中R1分子由以下通式(2)表示的分子中包含构成具有六氟亚丙基的二胺的二价有机基团,并且比浓粘度来自 0.05〜5.0dl / g(在N-甲基吡咯烷酮中,温度30℃,浓度:0.5g / dl)和通过酰亚胺化所述前体获得的聚酰亚胺(其中R1是构成二胺的二价有机基团,A 是氢原子,包括甲基或三氟甲基的直链烷基,n是芳环上的取代基数和1至4的整数)。

    Laser machining apparatus
    13.
    发明授权
    Laser machining apparatus 有权
    激光加工设备

    公开(公告)号:US07473867B2

    公开(公告)日:2009-01-06

    申请号:US11037222

    申请日:2005-01-19

    IPC分类号: B23K26/02 B23K26/08

    CPC分类号: B23K26/043

    摘要: A laser machining apparatus that excels in precision in terms of machining position and shape is provided with an optical axis adjusting unit disposed on a basal optical axis of a laser beam outputted from a laser oscillator so as to adjust the laser beam outputted from the laser oscillator onto a workpiece. The laser machining apparatus is provided further with mirrors, disposed between the laser oscillator and the optical axis adjusting unit, for freely deflecting the optical axis of the laser beam. The laser machining apparatus also includes an optical axis position detecting means, disposed between the optical axis adjusting unit and the optical axis deflecting means, for detecting the position of the optical axis of the laser beam. The apparatus aligns the optical axis of the laser beam incident on the optical axis adjusting unit with the basal optical axis by means of the mirrors based on a result detected by the optical axis position detecting means.

    摘要翻译: 在加工位置和形状方面精度优异的激光加工装置设置有设置在从激光振荡器输出的激光束的基础光轴上的光轴调节单元,以便调节从激光振荡器输出的激光束 到工件上。 激光加工装置还设置有设置在激光振荡器和光轴调节单元之间的反射镜,用于自由地偏转激光束的光轴。 激光加工装置还包括光轴位置检测装置,设置在光轴调整单元和光轴偏转装置之间,用于检测激光束的光轴的位置。 该装置基于由光轴位置检测装置检测到的结果,通过反射镜将入射在光轴调节单元上的激光束的光轴与基准光轴对准。

    Laser machining method and laser machining apparatus
    14.
    发明授权
    Laser machining method and laser machining apparatus 有权
    激光加工方法和激光加工设备

    公开(公告)号:US07205501B2

    公开(公告)日:2007-04-17

    申请号:US10927185

    申请日:2004-08-27

    IPC分类号: B23K26/38

    摘要: A laser machining method and a laser machining apparatus superior in hole position accuracy and hole quality. An outgoing beam outputted as short pulses is shaped by a pulse shaping unit so as to form a #1 branch beam. The #1 branch beam is supplied to a portion to be machined, so as to machine the portion. In this case, the #1 branch beam may be controlled to synchronize with the outgoing beam. When a piece to be machined is made from a metal material and at least one of an organic material and an inorganic material, the metal material is machined with a laser beam shaped to have a pulse width not shorter than 100 ns, and at least one of the organic material and the inorganic material is machined with a laser beam shaped to have a pulse width shorter than 100 ns.

    摘要翻译: 激光加工方法和激光加工装置,其孔位精度和孔质量优异。 作为短脉冲输出的输出光束通过脉冲整形单元成形,从而形成#1分支光束。 将#1分支光束供给到要加工的部分,以便加工该部分。 在这种情况下,可以控制#1分支光束与输出光束同步。 当要被加工的零件由金属材料和有机材料和无机材料中的至少一种制成时,金属材料被加工成具有不小于100ns的脉冲宽度的激光束,并且至少一个 的有机材料和无机材料用激光束加工成具有短于100ns的脉冲宽度。

    Laser machining method and laser machining apparatus
    15.
    发明申请
    Laser machining method and laser machining apparatus 有权
    激光加工方法和激光加工设备

    公开(公告)号:US20050155958A1

    公开(公告)日:2005-07-21

    申请号:US10927185

    申请日:2004-08-27

    摘要: A laser machining method and a laser machining apparatus superior in hole position accuracy and hole quality. An outgoing beam outputted as short pulses is shaped by a pulse shaping unit so as to form a #1 branch beam. The #1 branch beam is supplied to a portion to be machined, so as to machine the portion. In this case, the #1 branch beam may be controlled to synchronize with the outgoing beam. When a piece to be machined is made from a metal material and at least one of an organic material and an inorganic material, the metal material is machined with a laser beam shaped to have a pulse width not shorter than 100 ns, and at least one of the organic material and the inorganic material is machined with a laser beam shaped to have a pulse width shorter than 100 ns.

    摘要翻译: 激光加工方法和激光加工装置,其孔位精度和孔质量优异。 作为短脉冲输出的输出光束通过脉冲整形单元成形,从而形成#1分支光束。 将#1分支光束供给到要加工的部分,以便加工该部分。 在这种情况下,可以控制#1分支光束与输出光束同步。 当要被加工的零件由金属材料和有机材料和无机材料中的至少一种制成时,金属材料被加工成具有不小于100ns的脉冲宽度的激光束,并且至少一个 的有机材料和无机材料用激光束加工成具有短于100ns的脉冲宽度。

    Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers
    16.
    发明申请
    Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers 失效
    半导体发光器件具有夹在载流子限制层之间的量子阱层

    公开(公告)号:US20050145857A1

    公开(公告)日:2005-07-07

    申请号:US11067190

    申请日:2005-02-24

    CPC分类号: B82Y20/00 H01L33/06 H01L33/30

    摘要: The principal surface of a substrate made of a group III-V compound semiconductor material is about a (100) plane. A light emitting lamination structure is disposed on the principal surface. In the light emitting lamination structure, a quantum well layer is sandwiched by a pair of carrier confinement layers made of a semiconductor material having a band gap wider than a semiconductor material of the quantum well layer. The pair of carrier confinement layers are sandwiched by a pair of clad layers made of a semiconductor material having a band gap wider than the band gap of the semiconductor material of the carrier confinement layers. Thicknesses of the quantum well layer and the carrier confinement layers, as well as compositions of the semiconductor materials thereof, are set such that light emission recombination of electrons and holes occurs in the quantum well layer and not in the carrier confinement layers.

    摘要翻译: 由III-V族化合物半导体材料制成的衬底的主表面为(100)面。 发光层叠结构设置在主表面上。 在发光层叠结构中,量子阱层被由具有比量子阱层的半导体材料宽的带隙的半导体材料制成的一对载流子限制层夹在中间。 一对载流子限制层被由具有比载流子限制层的半导体材料的带隙宽的带隙的半导体材料制成的一对覆盖层夹在中间。 量子阱层和载流子限制层的厚度以及其半导体材料的组成被设定为使得电子和空穴的发光复合发生在量子阱层而不是在载流子限制层中。

    Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers
    17.
    发明授权
    Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers 有权
    半导体发光器件具有夹在载流子限制层之间的量子阱层

    公开(公告)号:US06900467B2

    公开(公告)日:2005-05-31

    申请号:US10664659

    申请日:2003-09-17

    IPC分类号: H01L33/06 H01L33/30 H01L33/00

    CPC分类号: H01L33/30 B82Y20/00 H01L33/06

    摘要: The principal surface of a substrate made of group III-V compound semiconductor is about (100) plane. A light emitting lamination structure is disposed on the principal surface. The light emitting lamination structure includes a quantum well layer made of group III-V mixed crystal semiconductor containing In, a pair of carrier confinement layers made of semiconductor material having a band gap wider than the quantum well layer and sandwiching the quantum well layer, and a pair of clad layers made of semiconductor material having a band gap wider than the carrier confinement layers and sandwiching the quantum well layer and the carrier confinement layers. A difference of 100 meV or larger exists between an energy level of the carrier confinement layers at a conduction band lower end and a ground level of an electron in the quantum well layer.

    摘要翻译: 由III-V族化合物半导体制成的基片的主表面为(100)面。 发光层叠结构设置在主表面上。 发光层压结构包括由含有In的III-V族混合晶体半导体制成的量子阱层,由具有宽于量子阱层的带隙并夹持量子阱层的半导体材料制成的一对载流子限制层,以及 一对由半导体材料制成的覆盖层,其具有比载流子限制层宽的带隙,并夹持量子阱层和载流子限制层。 在导带下端的载流子限制层的能级和量子阱层中的电子的地平面之间存在100meV或更大的差异。

    LENS ARRAY SHEET
    18.
    发明申请
    LENS ARRAY SHEET 有权
    镜头阵列

    公开(公告)号:US20140043681A1

    公开(公告)日:2014-02-13

    申请号:US14112010

    申请日:2012-04-04

    IPC分类号: G02B27/22 G02B3/00

    摘要: A lens array sheet has a glass base and a resin lens array layer formed on the glass base, wherein the resin lens array layer includes a plurality of resin lenses and preferably includes a composite material having nanoparticles added to a matrix of the resin and the plurality of resin lenses are formed on the glass base substantially independently from each other.

    摘要翻译: 透镜阵列片具有在玻璃基底上形成的玻璃基体和树脂透镜阵列层,其中树脂透镜阵列层包括多个树脂透镜,并且优选地包括具有添加到树脂的基体中的纳米颗粒的复合材料,并且多个 的树脂透镜基本上彼此独立地形成在玻璃基底上。

    Composite sheet, machining method for composite sheet and laser machining apparatus
    19.
    发明申请
    Composite sheet, machining method for composite sheet and laser machining apparatus 审中-公开
    复合片材,复合片材加工方法及激光加工设备

    公开(公告)号:US20080008854A1

    公开(公告)日:2008-01-10

    申请号:US11808248

    申请日:2007-06-07

    IPC分类号: B32B3/10 B23K26/00 B29C35/08

    摘要: A composite sheet whose product price can be reduced with a smaller number of manufacturing processes. A laser oscillator outputs a pulsed beam at a frequency f. A mask shapes the outer shape of the beam into a triangular, quadrangular or hexagonal shape. N pieces of time-sharing means time-share the beam to form N beams having a frequency f/N. N pairs of positioning means position the time-shared beams. A condensing lens condenses the beams. A rotating drum displaces a workpiece. A control means controls the time-sharing means, the N pairs of positioning means and a pedestal. The N pairs of positioning means are positioned to irradiate predetermined positions with the beams. The pedestal is moved. The time-sharing means are thereupon operated in predetermined order. The workpiece is machined to make holes whose outer shapes depend on the mask so that distances between sides of adjacent holes are equal to one another.

    摘要翻译: 一种复合片材,其制造价格可以减少,制造工艺数量较少。 激光振荡器以频率 f输出脉冲波束。 掩模将光束的外部形状形成为三角形,四边形或六边形形状。 N个分时装置意味着时间共享波束以形成具有频率f / N的N个波束。 N对定位装置定时共享光束。 聚光镜聚光。 旋转的滚筒移动工件。 控制装置控制分时装置,N对定位装置和基座。 N对定位装置定位成用梁照射预定位置。 基座移动。 分时装置随后以预定的顺序操作。 加工工件以形成其外形取决于掩模的孔,使得相邻孔的侧面之间的距离彼此相等。

    Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers
    20.
    发明授权
    Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers 失效
    半导体发光器件具有夹在载流子限制层之间的量子阱层

    公开(公告)号:US07084422B2

    公开(公告)日:2006-08-01

    申请号:US11067190

    申请日:2005-02-24

    IPC分类号: H01L29/006

    CPC分类号: B82Y20/00 H01L33/06 H01L33/30

    摘要: The principal surface of a substrate made of a group III-V compound semiconductor material is about a (100) plane. A light emitting lamination structure is disposed on the principal surface. In the light emitting lamination structure, a quantum well layer is sandwiched by a pair of carrier confinement layers made of a semiconductor material having a band gap wider than a semiconductor material of the quantum well layer. The pair of carrier confinement layers are sandwiched by a pair of clad layers made of a semiconductor material having a band gap wider than the band gap of the semiconductor material of the carrier confinement layers. Thicknesses of the quantum well layer and the carrier confinement layers, as well as compositions of the semiconductor materials thereof, are set such that light emission recombination of electrons and holes occurs in the quantum well layer and not in the carrier confinement layers.

    摘要翻译: 由III-V族化合物半导体材料制成的衬底的主表面为(100)面。 发光层叠结构设置在主表面上。 在发光层叠结构中,量子阱层被由具有比量子阱层的半导体材料宽的带隙的半导体材料制成的一对载流子限制层夹在中间。 一对载流子限制层被由具有比载流子限制层的半导体材料的带隙宽的带隙的半导体材料制成的一对覆盖层夹在中间。 量子阱层和载流子限制层的厚度以及其半导体材料的组成被设定为使得电子和空穴的发光复合发生在量子阱层而不是在载流子限制层中。