摘要:
An improved method and apparatus for drilling blind via holes to connect between upper conductive layers and lower conductive layers of printed wiring boards with laser lights. The resin layer contacting the targeted conductive layer is drilled to remain the residual layer with laser lights, and the residual layer is removed with a UV laser beam whose energy density is lower than the decomposition energy threshold of the conductive layer and higher than that of the resin layer. The apparatus for this drilling has at least two laser paths. The spatial energy distributions are made top-hat-shaped with beam homogenizer units in the paths, and the diameters and the energy densities are adjusted independently.
摘要:
A polyimide precursor having a repeating unit represented by the following general formula (1), wherein R1 contains a bivalent organic group constituting a diamine having a hexafluoropropylidene group in its molecule represented by the following general formula (2), and the reduced viscosity is from 0.05 to 5.0 dl/g (in N-methylpyrrolidone at a temperature of 30° C., concentration: 0.5 g/dl), and a polyimide obtained by imidizing said precursor: (wherein R1 is a bivalent organic group constituting a diamine, A is a hydrogen atom, a linear alkyl group including a methyl group, or a trifluoromethyl group, and n is the number of a substituent on an aromatic ring and an integer of from 1 to 4).
摘要:
A laser machining apparatus that excels in precision in terms of machining position and shape is provided with an optical axis adjusting unit disposed on a basal optical axis of a laser beam outputted from a laser oscillator so as to adjust the laser beam outputted from the laser oscillator onto a workpiece. The laser machining apparatus is provided further with mirrors, disposed between the laser oscillator and the optical axis adjusting unit, for freely deflecting the optical axis of the laser beam. The laser machining apparatus also includes an optical axis position detecting means, disposed between the optical axis adjusting unit and the optical axis deflecting means, for detecting the position of the optical axis of the laser beam. The apparatus aligns the optical axis of the laser beam incident on the optical axis adjusting unit with the basal optical axis by means of the mirrors based on a result detected by the optical axis position detecting means.
摘要:
A laser machining method and a laser machining apparatus superior in hole position accuracy and hole quality. An outgoing beam outputted as short pulses is shaped by a pulse shaping unit so as to form a #1 branch beam. The #1 branch beam is supplied to a portion to be machined, so as to machine the portion. In this case, the #1 branch beam may be controlled to synchronize with the outgoing beam. When a piece to be machined is made from a metal material and at least one of an organic material and an inorganic material, the metal material is machined with a laser beam shaped to have a pulse width not shorter than 100 ns, and at least one of the organic material and the inorganic material is machined with a laser beam shaped to have a pulse width shorter than 100 ns.
摘要:
A laser machining method and a laser machining apparatus superior in hole position accuracy and hole quality. An outgoing beam outputted as short pulses is shaped by a pulse shaping unit so as to form a #1 branch beam. The #1 branch beam is supplied to a portion to be machined, so as to machine the portion. In this case, the #1 branch beam may be controlled to synchronize with the outgoing beam. When a piece to be machined is made from a metal material and at least one of an organic material and an inorganic material, the metal material is machined with a laser beam shaped to have a pulse width not shorter than 100 ns, and at least one of the organic material and the inorganic material is machined with a laser beam shaped to have a pulse width shorter than 100 ns.
摘要:
The principal surface of a substrate made of a group III-V compound semiconductor material is about a (100) plane. A light emitting lamination structure is disposed on the principal surface. In the light emitting lamination structure, a quantum well layer is sandwiched by a pair of carrier confinement layers made of a semiconductor material having a band gap wider than a semiconductor material of the quantum well layer. The pair of carrier confinement layers are sandwiched by a pair of clad layers made of a semiconductor material having a band gap wider than the band gap of the semiconductor material of the carrier confinement layers. Thicknesses of the quantum well layer and the carrier confinement layers, as well as compositions of the semiconductor materials thereof, are set such that light emission recombination of electrons and holes occurs in the quantum well layer and not in the carrier confinement layers.
摘要:
The principal surface of a substrate made of group III-V compound semiconductor is about (100) plane. A light emitting lamination structure is disposed on the principal surface. The light emitting lamination structure includes a quantum well layer made of group III-V mixed crystal semiconductor containing In, a pair of carrier confinement layers made of semiconductor material having a band gap wider than the quantum well layer and sandwiching the quantum well layer, and a pair of clad layers made of semiconductor material having a band gap wider than the carrier confinement layers and sandwiching the quantum well layer and the carrier confinement layers. A difference of 100 meV or larger exists between an energy level of the carrier confinement layers at a conduction band lower end and a ground level of an electron in the quantum well layer.
摘要:
A lens array sheet has a glass base and a resin lens array layer formed on the glass base, wherein the resin lens array layer includes a plurality of resin lenses and preferably includes a composite material having nanoparticles added to a matrix of the resin and the plurality of resin lenses are formed on the glass base substantially independently from each other.
摘要:
A composite sheet whose product price can be reduced with a smaller number of manufacturing processes. A laser oscillator outputs a pulsed beam at a frequency f. A mask shapes the outer shape of the beam into a triangular, quadrangular or hexagonal shape. N pieces of time-sharing means time-share the beam to form N beams having a frequency f/N. N pairs of positioning means position the time-shared beams. A condensing lens condenses the beams. A rotating drum displaces a workpiece. A control means controls the time-sharing means, the N pairs of positioning means and a pedestal. The N pairs of positioning means are positioned to irradiate predetermined positions with the beams. The pedestal is moved. The time-sharing means are thereupon operated in predetermined order. The workpiece is machined to make holes whose outer shapes depend on the mask so that distances between sides of adjacent holes are equal to one another.
摘要:
The principal surface of a substrate made of a group III-V compound semiconductor material is about a (100) plane. A light emitting lamination structure is disposed on the principal surface. In the light emitting lamination structure, a quantum well layer is sandwiched by a pair of carrier confinement layers made of a semiconductor material having a band gap wider than a semiconductor material of the quantum well layer. The pair of carrier confinement layers are sandwiched by a pair of clad layers made of a semiconductor material having a band gap wider than the band gap of the semiconductor material of the carrier confinement layers. Thicknesses of the quantum well layer and the carrier confinement layers, as well as compositions of the semiconductor materials thereof, are set such that light emission recombination of electrons and holes occurs in the quantum well layer and not in the carrier confinement layers.