公开(公告)号：US12243945B2

公开(公告)日：2025-03-04

申请号：US18619261

申请日：2024-03-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Haruyuki Baba ,  Naoki Okuno ,  Yoshihiro Komatsu ,  Toshikazu Ohno

IPC: H01L29/49 ,  H01L29/51 ,  H01L29/786

Abstract: A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M. The third oxide and the fourth oxide include a region where the concentration of the element M is higher than that in the second oxide.

公开(公告)号：US11721769B2

公开(公告)日：2023-08-08

申请号：US17743956

申请日：2022-05-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yukinori Shima ,  Shinpei Matsuda ,  Haruyuki Baba ,  Ryunosuke Honda

IPC: H01L29/786 ,  H01L29/778 ,  H01L21/8234 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/823412 ,  H01L27/127 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/78696 ,  H01L29/24

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US11424369B2

公开(公告)日：2022-08-23

申请号：US17256341

申请日：2019-06-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Haruyuki Baba ,  Naoki Okuno ,  Yoshihiro Komatsu ,  Toshikazu Ohno

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/49 ,  H01L29/51

Abstract: A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M. The third oxide and the fourth oxide include a region where the concentration of the element M is higher than that in the second oxide.

公开(公告)号：US11342462B2

公开(公告)日：2022-05-24

申请号：US16918472

申请日：2020-07-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yukinori Shima ,  Shinpei Matsuda ,  Haruyuki Baba ,  Ryunosuke Honda

IPC: H01L29/786 ,  H01L29/778 ,  H01L27/12 ,  H01L29/66 ,  H01L29/24

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US11081326B2

公开(公告)日：2021-08-03

申请号：US15642652

申请日：2017-07-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Motoki Nakashima ,  Haruyuki Baba

IPC: H01J37/34 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  C23C14/34 ,  C23C14/08 ,  B28B11/24 ,  B28B1/00 ,  C04B35/01 ,  C04B35/453 ,  C04B35/58 ,  H01L29/423 ,  H01L29/24 ,  G02F1/1368 ,  G02F1/1335 ,  G02F1/1333

Abstract: A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

公开(公告)号：US12046679B2

公开(公告)日：2024-07-23

申请号：US18364749

申请日：2023-08-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yukinori Shima ,  Shinpei Matsuda ,  Haruyuki Baba ,  Ryunosuke Honda

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/66 ,  H01L29/778 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/823412 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/78696 ,  H01L29/24

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US11955562B2

公开(公告)日：2024-04-09

申请号：US17889597

申请日：2022-08-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Haruyuki Baba ,  Naoki Okuno ,  Yoshihiro Komatsu ,  Toshikazu Ohno

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L29/4966 ,  H01L29/517

Abstract: A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M. The third oxide and the fourth oxide include a region where the concentration of the element M is higher than that in the second oxide.

公开(公告)号：US11658185B2

公开(公告)日：2023-05-23

申请号：US17198660

申请日：2021-03-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Motoki Nakashima ,  Haruyuki Baba

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: H01L27/1225 ,  H01L29/66757 ,  H01L29/7869 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696 ,  G02F1/1368 ,  G02F1/136222 ,  G02F2201/44

Abstract: A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is 0.2 eV or more. The energy gap of the first region is greater than or equal to 3.3 eV and less than or equal to 4.0 eV and the energy gap of the second region is greater than or equal to 2.2 eV and less than or equal to 2.9 eV.

公开(公告)号：US11264511B2

公开(公告)日：2022-03-01

申请号：US16968796

申请日：2019-02-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Haruyuki Baba ,  Shiori Murayama

IPC: H01L29/786 ,  H01L27/105 ,  H01L27/12 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device with high on-state current is provided.
The semiconductor device includes a transistor. The transistor includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide; a first conductor and a second conductor over the second oxide; a second insulator; a third conductor; a fourth insulator over the first conductor and the second conductor; and a third insulator over the fourth insulator. An opening reaching the second oxide is provided in the third insulator and the fourth insulator. The third oxide is positioned to cover an inner wall of the opening. The second insulator is positioned to cover the inner wall of the opening with the third oxide therebetween. The third conductor is positioned to fill the opening with the third oxide and the second insulator therebetween. In the channel length direction of the transistor, an angle formed by a bottom surface of the first insulator and a side surface of the first conductor facing the second conductor is smaller than 90°.

公开(公告)号：US10236306B2

公开(公告)日：2019-03-19

申请号：US15963141

申请日：2018-04-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yukinori Shima ,  Shinpei Matsuda ,  Haruyuki Baba ,  Ryunosuke Honda

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/778 ,  H01L29/24

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.