公开(公告)号：US10707238B2

公开(公告)日：2020-07-07

申请号：US16355913

申请日：2019-03-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yukinori Shima ,  Shinpei Matsuda ,  Haruyuki Baba ,  Ryunosuke Honda

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/778 ,  H01L29/66 ,  H01L29/24

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US10522688B2

公开(公告)日：2019-12-31

申请号：US15380502

申请日：2016-12-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kiyoshi Kato ,  Tomoaki Atsumi ,  Shunpei Yamazaki ,  Haruyuki Baba ,  Shinpei Matsuda

IPC: H01L29/786 ,  H01L27/088 ,  H01L27/12 ,  H01L27/108

Abstract: A semiconductor device capable of holding data for a long time is provided. The semiconductor device includes a first transistor, a second transistor, and a circuit. The first transistor includes a first gate and a second gate. The first transistor includes a first semiconductor in a channel formation region. The first gate and the second gate overlap with each other in a region with the first semiconductor provided therebetween. The second transistor includes a second semiconductor in a channel formation region. A first terminal of the second transistor is electrically connected to a gate of the second transistor and the second gate. A second terminal of the second transistor is electrically connected to the circuit. The circuit has a function of generating a negative potential. The second semiconductor has a wider bandgap than the first semiconductor.

公开(公告)号：US10084096B2

公开(公告)日：2018-09-25

申请号：US15697513

申请日：2017-09-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Haruyuki Baba ,  Akio Suzuki ,  Hiromi Sawai ,  Masahiko Hayakawa ,  Noritaka Ishihara ,  Masashi Oota

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L29/04 ,  H01L21/02 ,  H01L21/203

CPC classification number: H01L29/7869 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/203 ,  H01L27/1255 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696

Abstract: After a sputtering gas is supplied to a deposition chamber, plasma including an ion of the sputtering gas is generated in the vicinity of a target. The ion of the sputtering gas is accelerated and collides with the target, so that flat-plate particles and atoms of the target are separated from the target. The flat-plate particles are deposited with a gap therebetween so that the flat plane faces a substrate. The atom and the aggregate of the atoms separated from the target enter the gap between the deposited flat-plate particles and grow in the plane direction of the substrate to fill the gap. A film is formed over the substrate. After the deposition, heat treatment is performed at high temperature in an oxygen atmosphere, which forms an oxide with a few oxygen vacancies and high crystallinity.

公开(公告)号：US11735403B2

公开(公告)日：2023-08-22

申请号：US17384867

申请日：2021-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Motoki Nakashima ,  Haruyuki Baba

IPC: H01J37/34 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  C23C14/34 ,  C23C14/08 ,  B28B11/24 ,  B28B1/00 ,  C04B35/01 ,  C04B35/453 ,  C04B35/58 ,  H01L29/423 ,  H01L29/24 ,  G02F1/1368 ,  G02F1/1335 ,  G02F1/1333

CPC classification number: H01J37/3429 ,  B28B1/008 ,  B28B11/24 ,  C04B35/01 ,  C04B35/453 ,  C04B35/58 ,  C23C14/086 ,  C23C14/3414 ,  H01J37/3414 ,  H01J37/3417 ,  H01J37/3426 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/127 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78648 ,  H01L29/78696 ,  C04B2235/3205 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/3852 ,  C04B2235/72 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/80 ,  G02F1/1368 ,  G02F1/133345 ,  G02F1/133514 ,  G02F1/133553 ,  G02F2203/02 ,  H01L29/24

Abstract: A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

公开(公告)号：US10950634B2

公开(公告)日：2021-03-16

申请号：US16935469

申请日：2020-07-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Motoki Nakashima ,  Haruyuki Baba

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  G02F1/1362 ,  G02F1/1368

Abstract: A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is 0.2 eV or more. The energy gap of the first region is greater than or equal to 3.3 eV and less than or equal to 4.0 eV and the energy gap of the second region is greater than or equal to 2.2 eV and less than or equal to 2.9 eV.

公开(公告)号：US10734413B2

公开(公告)日：2020-08-04

申请号：US15637081

申请日：2017-06-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Motoki Nakashima ,  Haruyuki Baba

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  G02F1/1368 ,  G02F1/1362

Abstract: A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is 0.2 eV or more. The energy gap of the first region is greater than or equal to 3.3 eV and less than or equal to 4.0 eV and the energy gap of the second region is greater than or equal to 2.2 eV and less than or equal to 2.9 eV.

公开(公告)号：US12142693B2

公开(公告)日：2024-11-12

申请号：US17642346

申请日：2020-09-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hitoshi Kunitake ,  Yuichi Yanagisawa ,  Shota Mizukami ,  Kazuki Tsuda ,  Haruyuki Baba ,  Shunpei Yamazaki

IPC: H01L29/786

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a first conductor, a second conductor, a third oxide, a fourth oxide, and a second insulator over the second oxide; a third insulator over the first conductor, the second conductor, the third oxide, and the fourth oxide; a fourth insulator over the second insulator; and a third conductor over the fourth insulator. The second insulator is positioned between the first conductor and the second conductor. The third oxide is positioned between the first conductor and the second insulator. The fourth oxide is positioned between the second conductor and the second insulator. The thickness of the third oxide between the first conductor and the second insulator is greater than or equal to 3 nm and less than or equal to 8 nm. The thickness of the fourth oxide between the second conductor and the second insulator is greater than or equal to 3 nm and less than or equal to 8 nm.

公开(公告)号：US11489076B2

公开(公告)日：2022-11-01

申请号：US16918472

申请日：2020-07-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yukinori Shima ,  Shinpei Matsuda ,  Haruyuki Baba ,  Ryunosuke Honda

IPC: H01L29/786 ,  H01L29/778 ,  H01L27/12 ,  H01L29/66 ,  H01L29/24

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US10115742B2

公开(公告)日：2018-10-30

申请号：US15427695

申请日：2017-02-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masashi Tsubuku ,  Haruyuki Baba ,  Sachie Shigenobu ,  Emi Koezuka

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786

Abstract: In a transistor including an oxide semiconductor, a variation in electrical characteristics is suppressed and reliability is improved. A semiconductor device includes a transistor. The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, a second gate electrode over the second insulating film, and a third insulating film over the oxide semiconductor film and the second gate electrode. The oxide semiconductor film includes a channel region overlapping with the second gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The first gate electrode and the second gate electrode are electrically connected to each other. A difference between a minimum value and a maximum value of the field-effect mobility in the case where the field-effect mobility in a saturation region of the transistor is measured.

公开(公告)号：US09761733B2

公开(公告)日：2017-09-12

申请号：US14953632

申请日：2015-11-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Haruyuki Baba ,  Akio Suzuki ,  Hiromi Sawai ,  Masahiko Hayakawa ,  Noritaka Ishihara ,  Masashi Oota

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L29/66 ,  H01L21/02 ,  H01L21/203

CPC classification number: H01L29/7869 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/203 ,  H01L27/1255 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696

Abstract: After a sputtering gas is supplied to a deposition chamber, plasma including an ion of the sputtering gas is generated in the vicinity of a target. The ion of the sputtering gas is accelerated and collides with the target, so that flat-plate particles and atoms of the target are separated from the target. The flat-plate particles are deposited with a gap therebetween so that the flat plane faces a substrate. The atom and the aggregate of the atoms separated from the target enter the gap between the deposited flat-plate particles and grow in the plane direction of the substrate to fill the gap. A film is formed over the substrate. After the deposition, heat treatment is performed at high temperature in an oxygen atmosphere, which forms an oxide with a few oxygen vacancies and high crystallinity.