公开(公告)号：US07804157B2

公开(公告)日：2010-09-28

申请号：US11454446

申请日：2006-06-16

Applicant: Shashank Sharma ,  Theodore I. Kamins

Inventor： Shashank Sharma ,  Theodore I. Kamins

IPC: H01L29/861

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/861 ,  Y10S977/72 ,  Y10S977/762

Abstract: A device configured to have a nanowire formed laterally between two electrodes includes a substrate and an insulator layer established on at least a portion of the substrate. An electrode of a first conductivity type and an electrode of a second conductivity type different than the first conductivity type are established at least on the insulator layer. The electrodes are electrically isolated from each other. The electrode of the first conductivity type has a vertical sidewall that faces a vertical sidewall of the electrode of the second conductivity type, whereby a gap is located between the two vertical sidewalls. Methods are also disclosed for forming the device.

Abstract translation: 被配置为具有在两个电极之间横向形成的纳米线的器件包括衬底和建立在衬底的至少一部分上的绝缘体层。 至少在绝缘体层上形成第一导电类型的电极和不同于第一导电类型的第二导电类型的电极。 电极彼此电隔离。 第一导电类型的电极具有面向第二导电类型的电极的垂直侧壁的垂直侧壁，由此间隙位于两个垂直侧壁之间。 还公开了用于形成装置的方法。

公开(公告)号：US07638431B2

公开(公告)日：2009-12-29

申请号：US11537589

申请日：2006-09-29

Applicant: Amir A. Yasseri ,  Theodore I. Kamins ,  Shashank Sharma

Inventor： Amir A. Yasseri ,  Theodore I. Kamins ,  Shashank Sharma

IPC: H01L21/44

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  B82Y20/00 ,  G01N21/658 ,  H01L29/0676 ,  Y10S977/857

Abstract: A metal is deposited onto a surface electrochemically using a deposition solution including a metal salt. In making a composite nanostructure, the solution further includes an enhancer that promotes electrochemical deposition of the metal on the nanostructure. In a method of forming catalyzing nanoparticles, the metal preferentially deposits on a selected location of a surface that is exposed through a mask layer instead of on unexposed surfaces. A composite nanostructure apparatus includes an array of nanowires and the metal deposited on at least some nanowire surfaces. Some of the nanowires are heterogeneous, branched and include different adjacent axial segments with controlled axial lengths. In some deposition solutions, the enhancer one or both of controls oxide formation on the surface and causes metal nanocrystal formation. The deposition solution further includes a solvent that carries the metal salt and the enhancer.

Abstract translation: 使用包含金属盐的沉积溶液电化学地将金属沉积在表面上。 在制备复合纳米结构时，溶液还包括促进金属在纳米结构上的电化学沉积的增强剂。 在形成催化纳米颗粒的方法中，金属优先沉积在通过掩模层而不是未暴露的表面暴露的表面的选定位置。 复合纳米结构设备包括纳米线阵列和沉积在至少一些纳米线表面上的金属。 一些纳米线是异质的，分支的并且包括具有受控轴向长度的不同的相邻轴向段。 在一些沉积溶液中，增强剂中的一个或两个控制表面上的氧化物形成并引起金属纳米晶体的形成。 沉积溶液还包括携带金属盐和增强剂的溶剂。

公开(公告)号：US07397558B2

公开(公告)日：2008-07-08

申请号：US11084833

申请日：2005-03-17

Applicant: Theodore I. Kamins ,  Alexandre M. Bratkovski ,  Shashank Sharma

Inventor： Theodore I. Kamins ,  Alexandre M. Bratkovski ,  Shashank Sharma

IPC: G01J3/44

CPC classification number: G01N21/658

Abstract: Methods of forming NERS-active structures are disclosed that include ordered arrays of nanoparticles. Nanoparticles covered with an outer shell may be arranged in an ordered array on a substrate using Langmuir-Blodgett techniques. A portion of the outer shell may be removed, and the exposed nanoparticles may be used in a system to perform nanoenhanced Raman spectroscopy. An ordered array of nanoparticles may be used as a mask for forming islands of NERS-active material on a substrate. NERS-active structures and an NERS system that includes an NERS-active structure are also disclosed. Also disclosed are methods for performing NERS with NERS-active structures.

Abstract translation: 公开了形成NERS-活性结构的方法，其包括有序的纳米颗粒阵列。 覆盖有外壳的纳米颗粒可以使用Langmuir-Blodgett技术以有序阵列布置在基底上。 可以去除外壳的一部分，并且暴露的纳米颗粒可用于进行纳米增强拉曼光谱的系统中。 可以使用有序的纳米颗粒阵列作为在衬底上形成NERS活性材料岛的掩模。 还公开了NERS-活性结构和包括NERS-活性结构的NERS系统。 还公开了用NERS活性结构进行NERS的方法。

公开(公告)号：US07241432B2

公开(公告)日：2007-07-10

申请号：US11515051

申请日：2006-09-01

Applicant: Shashank Sharma ,  Mahendra Kumar Sunkara

Inventor： Shashank Sharma ,  Mahendra Kumar Sunkara

IPC: C01B15/14

CPC classification number: D01F9/08 ,  B82Y30/00 ,  B82Y40/00 ,  C04B35/62231 ,  C04B35/62295 ,  C04B2235/386 ,  C04B2235/6581 ,  C04B2235/6582 ,  C04B2235/667 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/786 ,  D01F9/12

Abstract: This invention presents a process to produce bulk quantities of nanowires of a variety of semiconductor materials. Large liquid gallium drops are used as sinks for the gas phase solute, generated in-situ facilitated by microwave plasma. To grow silicon nanowires for example, a silicon substrate covered with gallium droplets is exposed to a microwave plasma containing atomic hydrogen. A range of process parameters such as microwave power, pressure, inlet gas phase composition, were used to synthesize silicon nanowires as small as 4 nm (nanometers) in diameter and several micrometers long. As opposed to the present technology, the instant technique does not require creation of quantum sized liquid metal droplets to synthesize nanowires. In addition, it offers advantages such as lower growth temperature, better control over size and size distribution, better control over the composition and purity of the nanowires.

公开(公告)号：US20070105356A1

公开(公告)日：2007-05-10

申请号：US11272347

申请日：2005-11-10

Applicant: Wei Wu ,  Theodore Kamins ,  Shashank Sharma ,  R. Williams

Inventor： Wei Wu ,  Theodore Kamins ,  Shashank Sharma ,  R. Williams

IPC: H01L21/20 ,  H01L21/44 ,  C30B11/00

CPC classification number: H01L21/76879 ,  H01L21/28525 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Nanowire growth in situ on a planar surface, which is one of a crystalline surface having any crystal orientation, a polycrystalline surface and a non-crystalline surface, is controlled by guiding catalyzed growth of the nanowire from the planar surface in a nano-throughhole of a patterned layer formed on the planar surface, such that the nanowire grows in situ perpendicular to the planar surface. An electronic device includes first and second regions of electronic circuitry vertically spaced by the patterned layer. The nano-throughhole of the patterned layer extends perpendicularly between the regions. The first region has the planar surface. The device further includes a nanowire extending perpendicular from a catalyst location on the planar surface of the first region in the nano-throughhole. The nanowire forms a component of a nano-scale circuit that connects the regions.

Abstract translation: 在具有任何晶体取向，多晶表面和非结晶表面的晶体表面之一的平坦表面上原位生长的纳米线通过在纳米通孔的纳米通孔中引导纳米线从平坦表面的催化生长来控制 形成在平坦表面上的图案层，使得纳米线垂直于平面表面原位生长。 电子设备包括由图案化层垂直间隔开的电子电路的第一和第二区域。 图案化层的纳米通孔在区域之间垂直延伸。 第一区具有平面。 该装置还包括从纳米通孔中的第一区域的平坦表面上的催化剂位置垂直延伸的纳米线。 纳米线形成连接这些区域的纳米级电路的组件。

公开(公告)号：US20060209300A1

公开(公告)日：2006-09-21

申请号：US11084833

申请日：2005-03-17

Applicant: Theodore Kamins ,  Alexandre Bratkovski ,  Shashank Sharma

Inventor： Theodore Kamins ,  Alexandre Bratkovski ,  Shashank Sharma

IPC: G01J3/44 ,  G01N21/65

CPC classification number: G01N21/658

Abstract: Methods of forming NERS-active structures are disclosed that include ordered arrays of nanoparticles. Nanoparticles covered with an outer shell may be arranged in an ordered array on a substrate using Langmuir-Blodgett techniques. A portion of the outer shell may be removed, and the exposed nanoparticles may be used in a system to perform nanoenhanced Raman spectroscopy. An ordered array of nanoparticles may be used as a mask for forming islands of NERS-active material on a substrate. NERS-active structures and an NERS system that includes an NERS-active structure are also disclosed. Also disclosed are methods for performing NERS with NERS-active structures.

Abstract translation: 公开了形成NERS-活性结构的方法，其包括有序的纳米颗粒阵列。 覆盖有外壳的纳米颗粒可以使用Langmuir-Blodgett技术以有序阵列布置在基底上。 可以去除外壳的一部分，并且暴露的纳米颗粒可用于进行纳米增强拉曼光谱的系统中。 可以使用有序的纳米颗粒阵列作为在衬底上形成NERS活性材料岛的掩模。 还公开了NERS-活性结构和包括NERS-活性结构的NERS系统。 还公开了用NERS活性结构进行NERS的方法。

公开(公告)号：US20060097389A1

公开(公告)日：2006-05-11

申请号：US10982051

申请日：2004-11-05

Applicant: M. Islam ,  Philip Kuekes ,  Shih-Yuan Wang ,  Duncan Stewart ,  Shashank Sharma

Inventor： M. Islam ,  Philip Kuekes ,  Shih-Yuan Wang ,  Duncan Stewart ,  Shashank Sharma

IPC: H01L23/48

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01S5/0261 ,  H01S5/041 ,  H01S5/183 ,  H01S5/341 ,  H01S5/3412 ,  H01S5/3428 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764 ,  Y10S977/938

Abstract: A nano-colonnade structure-and methods of fabrication and interconnection thereof utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a semiconductor layer to another horizontal surface of another layer to connect the layers. The nano-colonnade structure includes a first layer having the (111) horizontal surface; a second layer having the other horizontal surface; an insulator support between the first layer and the second layer that separates the first layer from the second layer. A portion of the second layer overhangs the insulator support, such that the horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer. The structure further includes a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface, such that the nanowire column connects the first layer to the second layer.

Abstract translation: 纳米柱廊结构及其制造和互连方法利用从半导体层的（111）水平表面几乎垂直地生长到另一层的另一水平表面的纳米线列，以连接这些层。 纳米柱廊结构包括具有（111）水平表面的第一层; 具有另一水平表面的第二层; 第一层和第二层之间的绝缘体支撑，其将第一层与第二层分离。 第二层的一部分突出于绝缘体支撑件上，使得伸出部分的水平表面与第一层的（111）水平表面间隔开并面对第一层的（111）水平表面。 该结构还包括从（111）水平表面几乎垂直延伸到相对的水平表面的纳米线列，使得纳米线列将第一层连接到第二层。

公开(公告)号：US07906778B2

公开(公告)日：2011-03-15

申请号：US11730486

申请日：2007-04-02

Applicant: Nobuhiko Kobayashi ,  Wei Wu ,  Duncan R Stewart ,  Shashank Sharma ,  Shih-Yuan Wang ,  R Stanley Williams

Inventor： Nobuhiko Kobayashi ,  Wei Wu ,  Duncan R Stewart ,  Shashank Sharma ,  Shih-Yuan Wang ,  R Stanley Williams

IPC: H01L29/06

CPC classification number: H01L31/035281 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L31/036 ,  H01L31/09 ,  H01L31/101 ,  H01L31/105 ,  Y02E10/50 ,  Y10S977/762 ,  Y10S977/814

Abstract: Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures that include one or more nanowires are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure.

Abstract translation: 公开了制备具有受控尺寸的纳米级半导体结构的方法。 还公开了包括一个或多个纳米线的半导体结构。 纳米线可以包括钝化层或具有中空管结构。

公开(公告)号：US07713352B2

公开(公告)日：2010-05-11

申请号：US11521084

申请日：2006-09-14

Applicant: Mahendra Kumar Sunkara ,  Shashank Sharma ,  Hari Chandrasekaran ,  Hongwei Li ,  Sreeram Vaddiraju

Inventor： Mahendra Kumar Sunkara ,  Shashank Sharma ,  Hari Chandrasekaran ,  Hongwei Li ,  Sreeram Vaddiraju

IPC: C30B17/00 ,  C30B23/00

CPC classification number: C30B25/18 ,  C30B23/007 ,  C30B23/025 ,  C30B25/005 ,  Y10S977/72 ,  Y10S977/762 ,  Y10S977/809 ,  Y10S977/81 ,  Y10S977/825

Abstract: A process is provided to produce bulk quantities of nanowires in a variety of semiconductor materials. Thin films and droplets of low-melting metals such as gallium, indium, bismuth, and aluminum are used to dissolve and to produce nanowires. The dissolution of solutes can be achieved by using a solid source of solute and low-melting metal, or using a vapor phase source of solute and low-melting metal. The resulting nanowires range in size from 1 nanometer up to 1 micron in diameter and lengths ranging from 1 nanometer to several hundred nanometers or microns. This process does not require the use of metals such as gold and iron in the form of clusters whose size determines the resulting nanowire size. In addition, the process allows for a lower growth temperature, better control over size and size distribution, and better control over the composition and purity of the nanowire produced therefrom.

Abstract translation: 提供了一种在各种半导体材料中产生大量纳米线的方法。 使用低熔点金属如镓，铟，铋和铝的薄膜和液滴来溶解和产生纳米线。 溶质的溶解可以通过使用溶质和低熔点金属的固体源，或使用溶质和低熔点金属的气相源来实现。 所得的纳米线的尺寸范围从1纳米直到1微米的直径和长度范围从1纳米到几百纳米或微米。 该方法不需要以尺寸决定所得纳米线尺寸的簇的形式使用诸如金和铁的金属。 此外，该方法允许较低的生长温度，更好地控制尺寸和尺寸分布，以及更好地控制由其制备的纳米线的组成和纯度。

公开(公告)号：US07570355B2

公开(公告)日：2009-08-04

申请号：US11341705

申请日：2006-01-27

Applicant: Theodore I. Kamins ,  Alexandre M. Bratkovski ,  Shashank Sharma

Inventor： Theodore I. Kamins ,  Alexandre M. Bratkovski ,  Shashank Sharma

IPC: G01J3/44 ,  G01N21/65

CPC classification number: G01N21/658 ,  B82Y15/00 ,  B82Y20/00 ,  G02B6/107

Abstract: A NERS-active structure is disclosed that includes at least one heterostructure nanowire. The at least one heterostructure nanowire may include alternating segments of an NERS-inactive material and a NERS-active material in an axial direction. Alternatively, the alternating segments may be of an NERS-inactive material and a material capable of attracting nanoparticles of a NERS-active material. In yet another alternative, the heterostructure nanowire may include a core with alternating coatings of an NERS-inactive material and a NERS-active material in a radial direction. A NERS system is also disclosed that includes a NERS-active structure. Also disclosed are methods for forming a NERS-active structure and methods for performing NERS with NERS-active structures.

Abstract translation: 公开了包含至少一个异质结构纳米线的NERS活性结构。 所述至少一个异质结构纳米线可以包括在轴向上的NERS非活性材料和NERS-活性材料的交替的段。 或者，交替的区段可以是NERS-非活性材料和能够吸引NERS-活性材料的纳米颗粒的材料。 在另一个替代方案中，异质结构纳米线可以包括在径向方向上具有NERS非活性材料和NERS-活性材料的交替涂层的芯。 还公开了包括NERS-活性结构的NERS系统。 还公开了形成NERS-活性结构的方法和用NERS-活性结构进行NERS的方法。